We fabricated high quality Nb/Al2O3/Ni0.6Cu0.4/Nb superconductor-insulator-ferromagnetsuperconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic Ni0.6Cu0.4 layer and on the ambient temperature, the junctions were in the 0 or π ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The Al2O3 tunnel barrier allows to achieve rather low damping, which is desired for many experiments especially in the quantum domain. The McCumber parameter βc increases exponentially with decreasing temperature and reaches βc ≈ 700 at T = 2.11 K. The critical current density in the π state was up to 5 A/cm 2 at T = 2.11 K, resulting in a Josephson penetration depth λJ as low as 160 µm. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the Ni0.6Cu0.4 layer and different transparencies of the interfaces. , which is self-biased and well decoupled from the environment, one needs to use high quality π JJs with high resistance (to avoid decoherence) and reasonably high critical current density j c (to have the Josephson energy E J ≫ k B T for junction sizes of few microns or below). High j c is also required to keep the Josephson plasma frequency ω p ∝ √ j c , which plays the role of an attempt frequency in the quantum tunneling problem, on the level of a few GHz.The concept of π JJs was introduced long ago[5, 6], but only recently superconductor-ferromagnet-superconductor (SFS) π JJs were realized [7,8]. Unfortunately SFS π JJs are highly overdamped and cannot be used for applications where low dissipation is required. The obvious way to decrease damping is to make a SFS-like tunnel junction, i.e. a superconductor-insulator-ferromagnet-superconductor (SIFS) junction. Due to the presence of the tunnel barrier the critical current I c in SIFS is lower than in SFS, but both the resistance R (at I I c ) and the I c R product are much higher. Moreover, the value of I c and R can be tuned by changing the thickness d I of the insulator (tunnel barrier).