Thickness dependence of the charge-density-wave transition temperature in VSe2

Yang, Jiyong; Wang, Weike; Liu, Yan; Du, Haifeng; Wei, Ning; Zheng, Guolin; Jin, Chan; Han, Yuyan; Wang, Ning; Yang, Zhaorong; Tian, Mingliang; Zhang, Yuheng

doi:10.1063/1.4893027

Cited by 96 publications

(129 citation statements)

References 34 publications

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“…It demonstrates that 2H-VSe 2 monolayer could be used in valleytronics well above room temperature. Note that the pristine 1T-phase VSe 2 has been widely studied38394041. However, with the presence of space inversion symmetry, it is definitely not a ferrovalley material.…”

Section: Resultsmentioning

confidence: 99%

Concepts of ferrovalley material and anomalous valley Hall effect

et al. 2016

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Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage, as well as electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization, or ferromagnetic materials with spontaneous spin polarization, here we introduce a new member of ferroic family, that is, a ferrovalley material with spontaneous valley polarization. Combining a two-band k·p model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin–orbit coupling coexists with the intrinsic exchange interaction of transition-metal d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and, more interestingly, anomalous valley Hall effect. On account of the latter, functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory and valley filter, are contemplated for valleytronic applications.

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Section: Resultsmentioning

confidence: 99%

Concepts of ferrovalley material and anomalous valley Hall effect

et al. 2016

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“…In micromechanically exofoliated VSe 2 nanoflakes, the CDW onset temperature was reported to decrease to 11.6 nm at 81 K, the lowest thickness measured. 13 In turbostratically disordered single layers of VSe 2 separated by layers of SnSe prepared using a self-assembly approach, a CDW has been reported that has an opposite carrier type (holes) than the bulk (electrons), 14 which does not occur when the VSe 2 thickness is increased beyond a monolayer. 15 An understanding of how to control properties based on the interaction between layers is developing as more heterostructures, and their properties are reported.…”

Section: Introductionmentioning

confidence: 98%

Transport properties of VSe₂ monolayers separated by bilayers of BiSe

et al. 2015

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The [(BiSe) 11d ] 1 (VSe 2 ) 1 heterostructure was characterized structurally and electrically to determine the effects of interlayer interaction on the charge density wave (CDW) found in VSe 2 and compared to previously reported [(SnSe) 1.15 ] 1 (VSe 2 ) 1 . Out-of-plane x-ray diffraction scans contain reflections that can be indexed as 00l reflections of a BiSe-VSe 2 supercell. Structure refinement indicates that the VSe 2 layer is very similar structurally to that found in [(SnSe) 1.15 ] 1 (VSe 2 ) 1 . Scanning transmission electron microscopy images show a turbostratically disordered layer structure and the formation of anti-phase boundaries in the BiSe bilayer. The [(BiSe) 11d ] 1 (VSe 2 ) 1 heterostructure is metallic with a negative Hall coefficient, in contrast to the positive Hall coefficient found for [(SnSe) 1.15 ] 1 (VSe 2 ) 1 . The CDW found [(SnSe) 1.15 ] 1 (VSe 2 ) 1 is not present in [(BiSe) 11d ] 1 (VSe 2 ) 1 . This work illustrates the importance of inter constituent interactions in determining the transport properties of single layer films.

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“…As the temperature changes, an unusual response in resistivity and magnetic susceptibility has been observed in typical CDW material systems, such as 1T-VS2 [21], 1T-VSe2 [4,50,59], 1T-TaS2 [26,37,86] and 1T-TaSe2 [82] which is also an indication of CDW transition.…”

Section: Temperature-dependent Resistivity and Magnetic Susceptibilitymentioning

confidence: 99%

“…Deposition of products in the form of single crystals is driven by a temperature gradient between the source and the growth regions [49]. Bulk CDW materials such as 1T-VSe2 [50], 1T-TaSe2 [28], 2H-TaSe2 [5,51] and 2H-NbSe2 [52] have been reported by the CVT method in recent years. For synthesis of 2D CDW materials, recently, J. Wang et al reported controlled synthesis of two-dimensional 1T-TiSe2 on sapphire substrates with sub-10-nm thickness [53] (Figure 5).…”

Section: Chemical Vapor Transportmentioning

confidence: 99%

Recent Advances in Two-Dimensional Materials with Charge Density Waves: Synthesis, Characterization and Applications

et al. 2017

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Abstract:Recently, two-dimensional (2D) charge density wave (CDW) materials have attracted extensive interest due to potential applications as high performance functional nanomaterials. As other 2D materials, 2D CDW materials are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into layers of single unit cell thickness. Although bulk CDW materials have been studied for decades, recent developments in nanoscale characterization and device fabrication have opened up new opportunities allowing applications such as oscillators, electrodes in supercapacitors, energy storage and conversion, sensors and spinelectronic devices. In this review, we first outline the synthesis techniques of 2D CDW materials including mechanical exfoliation, liquid exfoliation, chemical vapor transport (CVT), chemical vapor deposition (CVD), molecular beam epitaxy (MBE) and electrochemical exfoliation. Then, the characterization procedure of the 2D CDW materials such as temperature-dependent Raman spectroscopy, temperature-dependent resistivity, magnetic susceptibility and scanning tunneling microscopy (STM) are reviewed. Finally, applications of 2D CDW materials are reviewed.

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Thickness dependence of the charge-density-wave transition temperature in VSe2

Cited by 96 publications

References 34 publications

Concepts of ferrovalley material and anomalous valley Hall effect

Concepts of ferrovalley material and anomalous valley Hall effect

Transport properties of VSe₂ monolayers separated by bilayers of BiSe

Recent Advances in Two-Dimensional Materials with Charge Density Waves: Synthesis, Characterization and Applications

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Thickness dependence of the charge-density-wave transition temperature in VSe2

Cited by 96 publications

References 34 publications

Concepts of ferrovalley material and anomalous valley Hall effect

Concepts of ferrovalley material and anomalous valley Hall effect

Transport properties of VSe2 monolayers separated by bilayers of BiSe

Recent Advances in Two-Dimensional Materials with Charge Density Waves: Synthesis, Characterization and Applications

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Transport properties of VSe₂ monolayers separated by bilayers of BiSe