Thickness dependence of parallel and perpendicular anisotropic resistivity in Ta/NiFe/IrMn/Ta multilayer studied by anisotropic magnetoresistance and planar Hall effect

Thành, Nguyễn Trung; Tu, Le; Ha, N.D.; Kim, C. O.; Kim, CheolGi; Shin, Kyung-Ho; Rao, B. Bhaskara

doi:10.1063/1.2435816

Cited by 20 publications

(9 citation statements)

References 12 publications

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“…For thin films it is well known that the AMR ratio decreases with reducing film thickness [15], which has been attributed to an increasing sample resistivity due to the size effect [16] while ρ remains constant [15]. However, contrary to this description it has been found that ρ also decays with reducing film thickness [17,18]. To date the reason for this thickness dependence of AMR has not been clear, but in this paper we present a coherent physical explanation for this phenomenon, supported by experimental evidence for the underlying mechanism.…”

Section: Introductionmentioning

confidence: 45%

Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

2014

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Electron-magnon spin-flip scattering in thin films was studied by investigating the thickness dependence of the anisotropic magnetoresistance (AMR) effect and spin-wave stiffness. The absolute resistivity change due to the AMR effect ( ρ) in Ni, Ni:V, and Ni:Cr doped films reduced with film thickness. This loss of AMR is due to enhanced spin-flip scattering, dropping at the same thickness irrespective of dopant. The spin-wave stiffness reduced at the same thickness, confirming enhanced electron-magnon spin-flip scattering. The AMR ratio was fitted with a simple model, in which thickness dependence was included in a spin mixing resistivity term. This analysis gives insight into the fundamental contribution of magnon scattering to the resistivity in thin films, which ultimately has relevance to spin coherence in spintronic devices.

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Section: Introductionmentioning

confidence: 45%

Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

2014

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“…These results are well in line with the literature. 30,31 Thus, for t FM > 10 nm and negligible shape anisotropy, the normalized low-field sensitivityS 0 , Eq. (7), is determined by B ex þ B K .…”

Section: A Effects Of T Cu and T Fm On Sensor Behaviormentioning

confidence: 99%

Planar Hall effect bridge sensors with NiFe/Cu/IrMn stack optimized for self-field magnetic bead detection

Henriksen

Rizzi

Hansen

2016

Journal of Applied Physics

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Articles you may be interested inThe stack composition in trilayer Planar Hall effect bridge sensors is investigated experimentally to identify the optimal stack for magnetic bead detection using the sensor self-field. The sensors were fabricated using exchange-biased stacks Ni 80 Fe 20 (t FM )/Cu(t Cu )/Mn 80 Ir 20 (10 nm) with t FM ¼ 10, 20, and 30 nm, and 0 t Cu 0.6 nm. The sensors were characterized by magnetic hysteresis measurements, by measurements of the sensor response vs. applied field, and by measurements of the sensor response to a suspension of magnetic beads magnetized by the sensor self-field due to the sensor bias current. The exchange bias field was found to decay exponentially with t Cu and inversely with t FM . The reduced exchange field for larger values of t FM and t Cu resulted in higher sensitivities to both magnetic fields and magnetic beads. We argue that the maximum magnetic bead signal is limited by Joule heating of the sensors and, thus, that the magnetic stacks should be compared at constant power consumption. For a fixed sensor geometry, the figure of merit for this comparison is the magnetic field sensitivity normalized by the sensor bias voltage. In this regard, we found that sensors with t FM ¼ 20 nm or 30 nm outperformed those with t FM ¼ 10 nm by a factor of approximately two, because the latter have a reduced AMR ratio. Further, the optimum layer thicknesses, t Cu % 0.6 nm and t FM ¼ 20-30 nm, gave a 90% higher signal compared to the corresponding sensors with t Cu ¼ 0 nm. V C 2016 AIP Publishing LLC.

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“…The list of search keywords for publication statistics of parallel and perpendicular anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR), and tunnelling magnetoresistive (TMR) sensors is shown in Table II. Here, the perpendicular AMR refers to the planar Hall magnetoresistance/resistance effect [212][213][214][215][216][217][218]. The number of publications of GMR sensors exhibits an explosive growth after the discovery of GMR effect in 1988 [1,2].…”

Section: Roadmap Development Methodologymentioning

confidence: 99%

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. A MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of The IEEE Magnetics Society with the aim to provide an R&D guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from 10 countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording

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Thickness dependence of parallel and perpendicular anisotropic resistivity in Ta/NiFe/IrMn/Ta multilayer studied by anisotropic magnetoresistance and planar Hall effect

Cited by 20 publications

References 12 publications

Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model

Planar Hall effect bridge sensors with NiFe/Cu/IrMn stack optimized for self-field magnetic bead detection

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

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