Thickness dependence of ferroelectric polarization switching in poly(vinylidene fluoride–trifluoroethylene) spin cast films

Abstract

Articles you may be interested inModeling of ferroelectric switching process in poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films with electroactive interlayer Dependence of threshold thickness of crystallization and film morphology on film processing conditions in poly(vinylidene fluoride-trifluoroethylene) copolymer thin films

Energetics of the dipole flip-flop motion in a ferroelectric polymer chain

“…Among these materials, the ferroelectric polymer films of polyvinylidene fluoride ͓P͑VDF͔͒ and its copolymer films with vinylidene fluoride doped with trifluoroethylene ͓P͑VDF-TrFE͔͒ are particularly interesting. The structural, electronic, and optical properties of P͑VDF͒ or P͑VDF-TrFE͒ have been extensively studied experimentally [4][5][6][7][8][9][10][11][12][13][14][15][16][17] and theoretically. [18][19][20][21] The strong dipole moment existing in this material serves as an ideal playground for studying interesting phenomena such as field- 3,4 and UV photoinduced 22 molecular manipulations.…”

Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallization

“…2,3 A number of studies [4][5][6][7][8][9] have been focused on the ferroelectric behavior: permanent polarization, 4,5 switching time, 6 coercive voltage, 7 crystallinity in ultrathin films, 8 interfacial layer control of ferroelectric capacitors, 9 and electroactive polymers irradiated by electron beam. 10,11 For both low voltage switching below 5 V and low fabrication cost, the polymer should be solution processed with the film thickness of less than 100 nm due to its high coercive field ͑E c ͒ of approximately 50 MV/ m. The efforts to reduce the film thickness for the device operating at low voltage encounter the difficulties that there exists the threshold film thickness below which polymer capacitors have dramatically low crystallinity and consequently increase the switching time.…”

Recent Development in Polymer Ferroelectric Field Effect Transistor Memory

“…Polymers are chemically inert to Si and could be easily processed as thin films at relatively lower temperatures (< 200°C) by solution-based techniques, which to a large extent addresses present concerns about stability of the Siferroelectric gate interface. Extensive studies of the crystalline structure and ferroelectric properties of the thin films of a number of polymers, polyvinylidene fluoride (PVDF) [23,24], nylon-11 [25], and polyurea [26] have been reported, which show considerable promise in this direction. Compared to most ferroelectric ceramic oxides, low dielectric constant (~13.8ε o ) of PVDF copolymer permits the use of SiO 2 as a buffer layer (ε Si =3.9 ε o ) without encountering large depolarization fields.…”