Thickness dependence of Al2O3/HfO2/Al2O3 stacked tunneling layers on gadolinium oxide nanocrystal nonvolatile memory

Wang, Jer‐Chyi; Chen, Chia-Hsin; Lin, Chih-Min

doi:10.1016/j.mee.2015.01.021

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“…alloys or Al 2 O 3 ) as tunnel oxide and/or inter-poly oxide is still active. Most of them concern metal NPs as Au [22,23], Ag [24] or Pd [25] or metal oxide NCs as Gd 2 O 3 [26], ZnO [27]. Finally, only a few recent papers concern Ge or Si quantum dots in metal oxide high-κ dielectrics for NVM [28,29].…”

Section: Introductionmentioning

confidence: 99%

Nano-composite MOx materials for NVMs

Bonafos

Khomenkhova

Gourbilleau

et al. 2022

Metal Oxides for Non-Volatile Memory

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Section: Introductionmentioning

confidence: 99%

Nano-composite MOx materials for NVMs

Bonafos

Khomenkhova

Gourbilleau

et al. 2022

Metal Oxides for Non-Volatile Memory

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Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOz charge trapping layers

Jeng

Liu

Cheng

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A HfLaxTiyOz film that embeds in a Hf2La2O7 dielectric has been presented as the charge trapping layer (CTL) of metal–oxide–semiconductor (MOS) structures for nonvolatile memory (NVM). First, the physical and electrical characteristics of the MOS structures for NVM with HfLaxTiyOz CTLs treated at various postdeposition annealing conditions are examined. Then, the electrical and reliability properties, including hysteresis windows, programming/erasing (P/E) time, endurance, and retention of the MOS structures, with various Ti and O contents incorporated into the HfLaxTiyOz CTLs, are investigated. The results indicate that a 2.7 V hysteresis window is achieved by scanning over the range of ±7 V. The density of charge trap states is estimated to be 2.03 ± 0.06 × 1013 cm−2 during the C–V hysteresis sweep over the range of ±7 V for the HfLaxTiyOz CTL. Better properties, namely, a small memory window narrowing after 104 P/E cycles and a 7% charge loss after 10 years, are demonstrated for the HfLaxTiyOz CTL with a combined titanium content of 17.79 ± 0.53% and an oxygen content of 70.89 ± 2.13%.

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Thickness dependence of Al2O3/HfO2/Al2O3 stacked tunneling layers on gadolinium oxide nanocrystal nonvolatile memory

Cited by 2 publications

References 24 publications

Nano-composite MOx materials for NVMs

Nano-composite MOx materials for NVMs

Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOz charge trapping layers

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