Thickness dependence of AC conductivity in TlSe thin films

Abstract

Thalium selenide (TlSe), which has a lattice with tetragonal symmetry, is a member of the A3B6 semiconductor group. The structure of TlSe is defined as chains where atoms inside are bonded with an ionic-covalent bond. TlSe thin films were deposited by thermal evaporation under a high vacuum on glass substrates. The structure of TlSe thin films is amorphous with a tetragonal structure. The AC conductivity measurements were operated via the measurements of capacitance and dielectric dissipation (tanδ) at room temperature. AC conductivity values change between 10−11 and 10−6 S/cm at the low-frequency side with decreasing thickness. Two different conduction regions were observed with increasing frequency. The region observed at the low-frequency side can be attributed to the motion of a chain-like part of the lattice, while the region observed at the high-frequency side can be attributed to side groups.

Influence of chemical composition and doping on optical properties of thallium selenide layers prepared by adsorption/diffusion method

“…Tl 2 S and TlS are photoconductors [11,12] while Tl 5 Te 3 is a superconductor at low temperatures [13]. In modern microelectronics, thallium selenides can be used for production of photoconductors and photocells [14,15]. Meanwhile, the conversion of binary selenides to ternary or the incorporation of metal ions into them greatly improves their qualitative characteristics.…”