Thickness control of Ga1−xAlxAs layers grown by liquid phase epitaxy at low growth temperature

Todoroki, S.; Ohbu, I.; Kashiwada, Yasutoshi

doi:10.1016/0022-0248(87)90477-5

Cited by 1 publication

(1 citation statement)

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“…Thick layers can be grown cost-effectively by liquid phase epitaxy (LPE). The growth of thick Al x Ga 1−x As layers (more than 50 µm, x = 0.55–0.1) requires high initial epitaxy temperatures (850–900 °C) 9 – 11 . This is especially important for solid solution compositions with x > 0.35, where the layer growth rate drops ~ 1.5–2 times 11 , 12 .…”

Section: Introductionmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

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Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga–Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga–Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

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