Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy

Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt

“…α-Ga 2 O 3 possesses the largest bandgap of these polymorphs of about 5.3 eV [9] that would even further increase the expected breakdown voltage. Additionally, it can be grown heteroepitaxially with high quality on costeffective isostructural α-Al 2 O 3 substrates [17][18][19][20][21][22] (sapphire). It can be doped n-type utilizing, e.g., Si, Sn or F as dopants [22][23][24][25][26] and due to it being isostructural to α-Al 2 O 3 the full compositional range of α-(Al x Ga 1−x ) 2 O 3 from Ga 2 O 3 to Al 2 O 3 can be covered without miscibility gaps allowing bandgap engineering for HEMT structures or quantum wells from 5.3 eV to 8.8 eV [22,[27][28][29][30][31][32][33].…”

Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range

“…In comparison to the β‐polymorph, α‐Ga 2 O 3 has a trifle higher bandgap of 5.0–5.3 eV. [ 12–16 ] N‐type conductivity can be achieved by an additional Sn‐doping [ 17 ] enabling the preparation of highly rectifying Schottky barrier diodes. [ 17–19 ] Consequently, devices operating at high voltages with low on‐resistance were already demonstrated.…”

“…Successful fabrication of rhombohedral Ga 2 O 3 was reported by mist chemical vapor deposition (CVD), [ 13,17,19,21–23 ] halide vapor phase epitaxy (HVPE), [ 14,16,24 ] metalorganic vapor phase epitaxy (MOVPE), [ 15 ] mist epitaxy, [ 19 ] and the sol–gel method, [ 12 ] whereas ternary α‐ has been realized by mist CVD, [ 25–28 ] PLD, [ 29,30 ] and molecular beam epitaxy (MBE) [ 31 ] until now. As substrates, a ‐, c ‐, m ‐, or r ‐plane sapphire are possible to use.…”

Выявление и исследование 60-=SUP=-o-=/SUP=--поворотных доменов в α-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- методом просвечивающей электронной микроскопии

“…В частности, α-фаза обладает наибольшим значением ширины запрещенной зоны: 5.0−5.3 eV [5]. Монокристаллические пленки этой фазы получают гетероэпитаксией, например, методом хлоридной газофазной эпитаксии на подложках сапфира [6].…”