Thick In x Ga1−x N Films Prepared by Reactive Sputtering with Single Cermet Targets

Temperature dependence of electrical characteristics of n-In Ga1−N/p-Si hetero-junctions made totally by RF magnetron sputtering

“…An apparent drop in the series resistance of hetero-junctions occurs at the higher test temperature. In addition, the carrier concentration was also determined to be N d = 6.1 × 10 16 Some previous reports showed the breakdown voltage of~15 V for hetero-junction diodes and the breakdown voltage of~10 V for homojunction diodes [2,5,8,11,17]. Although the reported diodes made by MOCVD had the epitaxial growth of their semiconductors, their deposition was conducted at high temperatures above 800°C.…”

“…Yusoff et al investigated the p-GaN/n-GaN junction photodiode grown on Si (111) by plasma-assisted molecular beam epitaxy [13]. After measurements at the room temperature, the ideality factor and leakage current were found to be 19.68 and 1.32 × 10 −6 A at − 5 V. There are some reports about the n-In x Ga 1 − x N films grown on Si substrate with a high In content (x~40%) [14][15][16]. However, the growth of their n-In x Ga 1 − x N films was often carried out on GaN/AlN/Si substrate by using by the MOCVD technique.…”

“…The Al square contact with a thickness of 200 nm and an area of 1 mm 2 was deposited at 200°C for 30 min on top of n-In x Ga 1 − x N and p-Si substrate by using a steel mask. The detailed experimental procedure for depositing the n-GaN and n-InGaN films with cermet targets made by RF reactive sputtering can be referred to our previous works [6,7,9,16].…”

Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V

“…The detailed experimental procedure for depositing the GaN and InGaN films with cermet targets made of hot pressing the mixture of metallic and nitride powders can be referred to our previous works [10][11][12].…”

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

“…The advantages of using the sputtering technique include lower deposition temperature and equipment cost, and secure working atmosphere without using the toxic metal-organic precursors and ammonia [10,14,15]. In order to investigate the thermal stability, MOS Schottky diodes were deposited with the supports of RF sputtering and annealing at 400 1C.…”