Thick boron doped diamond single crystals for high power electronics

Achard, Jocelyn; Silva, F.; Issaoui, Riadh; Brinza, Ovidiu; Tallaire, Alexandre; Schneider, H.; Isoird, Karine; Ding, Hui; Koné, Sodjan; Pinault, M.‐A.; Jomard, François; Gicquel, A.

doi:10.1016/j.diamond.2010.11.014

Cited by 72 publications

(54 citation statements)

References 59 publications

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“…The use of a vertical configuration for which ohmic and Schottky contacts are deposited on each side of the diamond crystal, is a possible way to significantly reduce the series resistance by enlarging the area through which current is driven. This has been supported by recent modelling results 9. If we want to develop such diamond based high power electronic devices, the use of thick heavily boron doped films is required.…”

Section: Introductionmentioning

confidence: 56%

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Issaoui

Achard

Silva

et al. 2011

Physica Status Solidi (a)

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The development of diamond based devices for high power electronic applications requires the growth of thick heavily boron doped diamond. During the growth of CVD single crystals, the final form of the film depends on the different crystalline faces growth rate with respect to each others. Three parameters (α, β and γ) which correspond to the displacement speeds of the {111}, {110} and {113} faces, normalized to the {100} displacement speed can be used into a 3D crystal growth model in order to predict the final crystal morphology. This model has been applied with success to intrinsic diamond, and is extended here to the growth of boron doped diamond. It is found that the addition of diborane gas promotes the appearance of large {110} and {113} faces limiting the usable top surface area and generally leading to stress and consequently to crystal breaking‐up. By adding a small amount of oxygen (0.25%) to the feed gas, the {110} faces appearance can be inhibited and the crystal integrity preserved.

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Section: Introductionmentioning

confidence: 56%

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Issaoui

Achard

Silva

et al. 2011

Physica Status Solidi (a)

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“…, low defect density scBDD material is challenging requiring very careful control of growth conditions and substrate [9,10]. Any defect or defect related structure such as a pit, which does form in scBDD is also expected to be a site of differential boron uptake, compared to the surrounding crystal lattice.…”

Section: à3mentioning

confidence: 99%

Intermittent‐contact Scanning Electrochemical Microscopy (IC‐SECM) as a Quantitative Probe of Defects in Single Crystal Boron Doped Diamond Electrodes

Tomlinson¹,

Patten²,

Green³

et al. 2016

Electroanalysis

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We demonstrate, for the first time, the use of electrochemical imaging to identify defect and defect free areas in single crystal boron doped diamond (BDD) electrodes. Specifically, we show that defects contain different boron dopant concentrations than the surrounding single crystal matrix and that these variations can be visualized using intermittent contact−scanning electrochemical microscopy (IC‐SECM). The measured IC‐SECM tip currents provide quantitative information on the rates of electron transfer across the single crystal BDD electrodes, which correlate with variations in boron doping levels. In some instances, IC‐SECM outperforms alternative methods such as Raman microscopy and cathodoluminescence imaging, due to its intrinsic surface‐sensitivity, expanding the application and impact of electrochemical microscopy for materials characterization. The results obtained, and procedure outlined, are particularly valuable for the assessment and screening of single crystal BDD electrodes.

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“…HPHT has also been used to grow sc BDD specifically for electrochemical studies [31]. Understanding the CVD growth mechanism and optimizing growth conditions [32] to minimize defect formation and impurity incorporation is essential for obtaining high-quality, highly doped sc BDD materials [33] suitable for electrochemistry.…”

Section: Chemical Vapor Deposition Growthmentioning

confidence: 99%

“…Such materials are now being grown [136] in bulk form, as shown in Figure 5.15, for applications such as high-power electronics [33] and as delta-doped layers [137], where thin-film sc BDD is overgrown on insulating diamond, for field effect transistor and Schottky diode applications. One recent article described the overgrowth of a diamondattenuated total reflection prism with homoepitaxial BDD (thickness ∼100 nm, boron dopant density ∼5 × 10 20 B atoms cm −3 ) [138].…”

Section: Single-crystal Bdd Electrochemistrymentioning

confidence: 99%

The Use of Conducting Diamond in Electrochemistry

Macpherson

2015

Advances in Electrochemical Sciences and Engineering

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Thick boron doped diamond single crystals for high power electronics

Cited by 72 publications

References 59 publications

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

Intermittent‐contact Scanning Electrochemical Microscopy (IC‐SECM) as a Quantitative Probe of Defects in Single Crystal Boron Doped Diamond Electrodes

The Use of Conducting Diamond in Electrochemistry

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