Thermoreflectance imaging of electromigration evolution in asymmetric aluminum constrictions

Tian, Hao; Ahn, Woojin; Maize, Kerry; Si, Mengwei; Ye, Peide; Shakouri, Ali; Bermel, Peter

doi:10.1063/1.5005938

Cited by 2 publications

(1 citation statement)

References 29 publications

(32 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some experimental evidence supporting this scenario was soon after shown by de Pablo et al [52] through scanning force microscopy in gold micro-stripes. More recently, lateral asymmetries in the nanostructures have shown to also produce an asymmetric EM current [53,54] chiefly due to the resulting asymmetric temperature distribution. Motivated by these works we have compared the polarity dependence of the EM current for symmetric and asymmetric structures (see figures 1(b) and (c)), although we were unable to find a clear trend since the dispersion from one sample to another was more important that the differences observed between symmetric and asymmetric structures.…”

Section: Asymmetric Structuresmentioning

confidence: 99%

Electromigration-induced resistance switching in indented Al microstrips

et al. 2019

View full text Add to dashboard Cite

Non-volatile resistive memory cells are promising candidates to tremendously impact the further development of Boolean and neuromorphic computing. In particular, nanoscale memory-bit cells based on electromigration (EM)-induced resistive switching in monolithic metallic structures have been identified as an appealing and competitive alternative to achieve ultrahigh density while keeping straightforward manufacturing processes. In this work, we investigate the EM-induced resistance switching in indented Al microstrips. In order to guarantee a large switching endurance, we limited the on-to-off ratio to a minimum readable value. Two switching protocols were tested, (i) a variable current pulse amplitude adjusted to ensure a precise change of resistance, and (ii) a fixed current pulse amplitude. Both approaches exhibit an initial training period where the mean value of the device's resistance drifts in time, followed by a more stable behavior. Electron microscopy imaging of the devices show irreversible changes of the material properties from the early stages of the switching process. High and low resistance states show retention times of days and endurances of ∼10 3 switching cycles.

show abstract

Section: Asymmetric Structuresmentioning

confidence: 99%