The behaviour of diffusion thermopower S d , in AlGaAs/GaAs and AlGaN/GaN heterojunctions, in the Bloch-Grüneisen (BG) regime is examined taking into account the temperature dependent effects arising from screening of the electron-phonon interaction and thermal averaging over the carrier distribution. S d is found to follow a non-linear temperature dependence before becoming linear as it approaches T = 0 K. This is in contrast to the usual linear dependence used, in literature, in the analysis of thermopower S. The overall behaviour of S is influenced by the phonon-drag contribution, S g . The calculations of both S d and S g , presented, demonstrate the importance of the proper inclusion of the temperature dependent effects, as in the mobility studies, in the BG regime. An analysis of the thermopower data in ultra-pure samples at very-low temperatures will enable better understanding of electron-phonon interaction.