Thermophysical properties of SrHfO3 and SrRuO3

Yamanaka, Shinşuke; Maekawa, Takuji; Muta, Hiroaki; Matsuda, Tsuneo; Kobayashi, Shinichi; Kurosaki, Ken

doi:10.1016/j.jssc.2004.05.039

Cited by 118 publications

(97 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…32 For SrRuO 3 only a single reference was found pertaining to a polycrystalline sample giving E = 161 GPa and G = 60.1 GPa. 33 These values are much lower than the ones that hold for SrTiO 3 , cannot be attributed to anisotropy ͑i.e., polycrystal versus single crystal͒ and indicates that SrTiO 3 is indeed much stiffer than SrRuO 3 . For DyScO 3 unfortunately it seems that data on elastic constants have not been published.…”

Section: Discussionmentioning

confidence: 80%

Substrate influence on the shape of domains in epitaxial PbTiO3 thin films

Venkatesan

Kooi

Hosson

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

Epitaxial PbTiO 3 thin films were grown on SrTiO 3 ͑001͒ and DyScO 3 ͑110͒ substrates by pulsed laser deposition. We used high-resolution transmission electron microscopy to investigate the 90°d omain structure in the films. They were found to have a predominant fraction of c domains along with a certain minor volume fraction of a domains that is clearly higher in case of the DyScO 3 substrates. In PbTiO 3 on SrTiO 3 the a domains were found to have a wedge shape, whereas in PbTiO 3 on SrRuO 3 / DyScO 3 they have a nearly uniform width. The presence of steps in the domain walls has been observed in the films on both substrates, but the steps are clearly more dominant in the case of SrTiO 3 than of SrRuO 3 / DyScO 3 and are responsible for the observed wedge shape. The observed difference in the films induced by the two substrates is attributed to a higher stiffness of SrTiO 3 than of SrRuO 3 / DyScO 3 as we corroborated with nanoindentation experiments.

show abstract

Section: Discussionmentioning

confidence: 80%

Substrate influence on the shape of domains in epitaxial PbTiO3 thin films

Venkatesan

Kooi

Hosson

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The coefficient of thermal expansion for Ge is approximately one order of magnitude less than a composition-averaged value for SHTO alloys [26][27][28] ; over the 500-650°C annealing window the x-value that matches the Ge separation distance decreases from x ∼ 0.4 to x ∼ 0.3. We sought to determine how interface strain influenced crystallization.…”

Section: Deposition and Crystallization Of Shf X Ti 1−x O 3 Filmsmentioning

confidence: 79%

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

McDaniel

Posadas

et al. 2016

MRS Communications

View full text Add to dashboard Cite

This work reports the growth of crystalline SrHf x Ti 1−x O 3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225°C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from ∼530°C (x = 0) to ∼660°C (x = 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm 2 leakage current at 1 MV/cm for x = 0.55.

show abstract

“…8,13) Assuming that the mean free path of the heat carrying phonons equals to the cubic root of the lattice volume, the min can be estimated to about 0.28 Wm À1 K À1 at room temperature as shown in Fig. 3(b).…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric Properties of Thallium Compounds with Extremely Low Thermal Conductivity

et al. 2005

Self Cite

View full text Add to dashboard Cite

Polycrystalline samples of thallium compounds, Tl 9 BiTe 6 , TlBiTe 2 , TlSbTe 2 , and AgTlTe were prepared and the thermoelectric properties such as the electrical resistivity, Seebeck coefficient, and thermal conductivity were measured. The Seebeck coefficients of Tl 9 BiTe 6 , TlSbTe 2 , and AgTlTe are positive, while that of TlBiTe 2 is negative. The thermal conductivities of these thallium compounds are very low compared with state-of-the-art thermoelectric materials. Especially, AgTlTe indicates extremely low value, 0.25 Wm À1 K À1 at room temperature. The dimensionless figure of merit ZT of thallium compounds are relatively high due to their very low thermal conductivities. The maximum value of ZT is obtained for TlSbTe 2 as 0.87 at 715 K.

show abstract

Thermophysical properties of SrHfO3 and SrRuO3

Cited by 118 publications

References 30 publications

Substrate influence on the shape of domains in epitaxial PbTiO3 thin films

Substrate influence on the shape of domains in epitaxial PbTiO3 thin films

Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

Thermoelectric Properties of Thallium Compounds with Extremely Low Thermal Conductivity

Contact Info

Product

Resources

About