Thermomigration Versus Electromigration in Microelectronics Solder Joints

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

“…4(a), it is observed that the Al layer was degraded at its interface with polyimide, but not near the SiC epilayer, where the higher current density and heat dissipation must take place during failure. According to these results, the most suitable failure mechanism is W electromigration and thermomigration into the Al layer, similarly to that reported in another works [18,19], which in this case led to a local Schottky barrier shift. This is also justified by the fact that W atoms were displaced in the same direction as the electron flow during surge current test (from the periphery to the wire bonds).…”

“…In addition, the elevated thermal gradient that, accounting for Fig. 4(a), appeared at the periphery, would also enhance the W layer degradation by thermomigration [19], which took place in the same direction (heaviest metal moving from hot to cold areas). Similar effects were observed in D2, as depicted in the SEM image of Fig.…”

A Review of Damage, Void Evolution, and Fatigue Life Prediction Models

“…UMT was also used for fatigue under electrical-thermal-mechanical loading [120][121][122][123][124][125][126][127][128][129][130][131][132][133][134]. In the literature, a model was implemented into a finite element procedure to predict nanoelectronics solder joint's time to failure under high current density.…”

Evaluation of the thermal conductance of flip-chip bonding structure utilizing the measurement based on Fourier’s law of heat conduction at steady-state

“…Such an area-array interconnect technology is originated from the controlled collapse chip connection technique proposed by IBM in the years of 60s 1 which possesses the advantages of high input/output counts, short electrical signal propagation distance, low packaging profile and high packaging efficiency. However, the issues of thermal fatigue induced by the thermal expansion mismatch of chip and substrate, 2,3 electromigration [4][5][6][7][8][9][10][11][12] and thermomigration 4,[10][11][12][13][14][15][16][17][18][19][20][21] are the reliability concerns of flip-chip bonding devices containing solder joints as the interconnect of die and substrate. Insertion of underfill in the gap between die and substrate is a popular method to suppress the thermal fatigue degradation.…”

“…[4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] Thermomigration is usually accompanied with electromigration due to the joule heating effect at the interconnection of the die side of devices. There is no doubt that temperature is one of the key factors affecting these failure phenomena that the increase of temperature accelerates the electromigration failure in solder joints 32 whereas the thermomigration-related studies have reported the threshold values of temperature gradient for triggering the thermomigration failure in solder joints.…”