Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress

Palanisamy, Shanmuganathan; Lutz, Josef; Boldyrjew-Mast, Roman; Basler, Thomas

doi:10.1109/irps45951.2020.9129286

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…Some studies have demonstrated the surge current capabilities of body-PiN-diodes and built-in SBDs in SiC MOSFETs and their associated failure mechanisms. [16][17][18][19][20][21][22][23] The primary failure mechanism has been found to be heat generations from forward voltage drops with huge surge currents, which can cause to the source metal to melt and/or brake the silicon oxide layers. However, only a few papers have reported the surge current capabilities of SBDs embedded in SiC MOSFETs to the best of our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs

Kashiwa

Takahashi²,

Kitamura³

et al. 2023

Jpn. J. Appl. Phys.

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This paper presents a comparative study on the short-circuit and surge current withstanding capabilities and the static and turn-on switching characteristics of commercial 1.2-kV SiC SBD-embedded MOSFETs. The results confirmed that MOSFETs with a larger SBD area ratio had higher leakage current through the SBD during short-circuit transients due to a higher electric field and lattice temperatures as high as roughly 1120 K at the SBD, which resulted in reduced short-circuit withstanding capabilities. It was also found that MOSFETs with a smaller SBD area ratio had reduced surge-current capabilities in embedded SBDs. We conclude that is not due to the small SBD area ratio but to a weak bipolar operation of the JBS rectifiers even in high current regions.

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Section: Introductionmentioning

confidence: 99%

Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs

Kashiwa

Takahashi²,

Kitamura³

et al. 2023

Jpn. J. Appl. Phys.

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“…Several studies have demonstrated the surge current capabilities of body-PiNdiodes and embedded Schottky barrier diodes (SBDs) in SiC MOSFETs and their related failure mechanisms. [3][4][5][6][7][8] The main failure mechanism has been found to be the heat generated by forward voltage drops under surge current stress, which melts the source metal and/or ruptures the silicon oxide layers. However, the methodology to improve the surge current capability of the internal diodes in SiC MOSFETs has yet to be demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs

Kitamura

Kato

Tanaka

et al. 2022

Jpn. J. Appl. Phys.

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This study investigates the surge current capabilities of embedded Schottky barrier diodes (SBDs) in SiC SBD-integrated trench MOSFETs (SWITCH-MOSs) using titanium and nickel for the Schottky metals. The results demonstrated that a 25 % enhanced surge current capability can be achieved for an embedded SBD with a higher barrier height of nickel compared to those with titanium and that it was comparable to body-PiN-diodes in a standard SiC trench MOSFET (IE-UMOSFETs). Furthermore, the study demonstrated the superior surge current capabilities of body-PiN-diodes in IE-UMOSFETs that have wide and thick Cu heat capacitance blocks attached to chip surfaces, and a significant improvement of 57 % in surge current capability was achieved with 2.9 × 4.1 mm2 wide and 0.4 mm thick Cu blocks. Notably, there was no sacrifice of I-V characteristics in the third quadrants and reverse recovery characteristics or the on resistance in the first quadrant with the Cu blocks.

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Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

Palanisamy

Basler

Lutz

et al. 2021

2021 IEEE International Reliability Physics Symposium (IRPS)

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Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress

Cited by 6 publications

References 9 publications

Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs

Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs

Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

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