Thermoelectricity and electronic properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Y</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Ce</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>CrB</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>

Flipo, Sever; Rösner, H.; Bobnar, Matej; Kvashnina, Kristina O.; Leithe‐Jasper, Andreas; Gumeniuk, Roman

doi:10.1103/physrevb.103.195121

Cited by 10 publications

(17 citation statements)

References 59 publications

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“…Y 1-x Ce x CrB 4 [118] AlLiB 14 [185] YB 66 C 0.6 [165] SrB 6 [38] YAlB 14 [143] B 105 [ [45] CaB 6 [66] SmB 60 [37] Cu 4 B 105 [181] Ca 0.5 Sr 0.5 B 6 [128] SmB 62 [37] V 1.5 B 105 [45] AlMgB 14 [65] YB 66 [136] Zr 1.0 B 105 [91] Table A2. Materials represented in Figure 12b with corresponding reference numbers (nB: nano boron, cB: carbon-coated boron).…”

Section: Methodsmentioning

confidence: 99%

“…[57] A recent study on Y 1-x Ce x CrB 4 has obtained a zT of 0.06 at 800 K. Although too low for practical applications, this outcome widens the borides' application temperature (900-1700 K) and surpasses prior results reported for other borides such as CoB 105 , B 6 O, or YB 66 . [45,77,118,119]…”

Section: Tetraboridesmentioning

confidence: 99%

“…Due to the peculiar chemistry of elemental boron, most of these materials feature high structural complexity, culminating in the cage-like compounds REB 66 . This complexity, which can be manipulated by varying the metallic elements, yields very low lattice thermal conductivity [37,45,62,65,66,91,118,119,128,136,143,149,165,181,185] b) doping studies of elemental boron or boron compounds into promising thermoelectric materials. [34,35,50,52,53,58,90,98,99,147,[182][183][184][186][187][188] See Tables A1 and A2 in Appendix.…”

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

“…Maximum achieved zT vs. Temperature (K) of a) some of boron and boron-based compounds;[37,45,62,65,66,91,118,119,128,136,143,149,165,181,185] b) doping studies of elemental boron or boron compounds into promising thermoelectric materials [34,35,50,52,53,58,90,98,99,147,[182][183][184][186][187][188]. See Tables A1 and A2 in Appendix.…”

mentioning

confidence: 99%

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Thermoelectric Borides: Review and Future Perspectives

Saglik

Mete

Terzi

et al. 2023

Advanced Physics Research

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The conversion of waste heat into electricity plays a vital role in energy harvesting since conventional non‐renewable energy sources have been rapidly approaching the limit of utilization. The thermoelectric (TE) technology relies on converting temperature difference (or waste heat) into electricity or vice versa. The performance of TE materials is gauged by zT = S2T/ρκ, where S, ρ, κ, and T represent the Seebeck coefficient, the electrical resistivity, the total thermal conductivity, and the absolute temperature, respectively. Boron‐based compounds are considered refractory materials due to their high melting points and advanced chemical and mechanical stability. Besides high thermal stability, many borides exhibit intrinsically low thermal conductivity. The discovery of good TE efficiency in boron carbides, where unexpectedly high Seebeck coefficients (S(T) ≈ 250 µVK−1) are observed at high charge carrier densities (≈1021 cm−3), has induced an intense curiosity for the TE properties of other boron‐based compounds. Intermetallic borides with high boron content (>65 at%) are of particular interest among all known TE materials due to their great potential in TE generators, which can operate under extreme environmental conditions (T > 1000 K). This article reviews the TE properties of borides and state‐of‐art TE materials upon boron/borides doping.

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Section: Methodsmentioning

confidence: 99%

Section: Tetraboridesmentioning

confidence: 99%

Section: Conclusion and Future Prospectsmentioning

confidence: 99%

mentioning

confidence: 99%

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Thermoelectric Borides: Review and Future Perspectives

Saglik

Mete

Terzi

et al. 2023

Advanced Physics Research

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“…YCrB 4 is a parent material candidate for the synthesis of (5-7)-�-borophene sheets (i.e., boron networks with five-and seven-membered rings), for which detailed structural data are currently required (Zhang et al, 2022(Zhang et al, , 2023. YCrB 4 is a promising semiconductor material with good thermoelectric properties and a good power factor of 6.0 mW cm À 1 K À 2 at 500 K (Simonson & Poon, 2010;Flipo et al, 2021). The YCrB 4 compound is also expected to be a super-hard material (Akopov et al, 2018) and a narrow bandgap semiconductor (Medvedeva et al, 2002).…”

Section: Chemical Contextmentioning

confidence: 99%

Redetermination of the crystal structure of yttrium chromium tetraboride, YCrB₄, from single-crystal X-ray diffraction data

Tokuda,

Yubuta,

Shishido

et al. 2023

Acta Cryst E

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The structural parameters of yttrium chromium tetraboride YCrB4 were refined based on single-crystal X-ray diffraction data. YCrB4 is orthorhombic, having a space group of type Pbam (No. 55) and with lattice parameters of a = 5.9425 (2), b = 11.4831 (4), c = 3.4643 (1) Å. The Y and Cr atoms are located at Wyckoff 4h sites (x, y, 0) and B atoms at the Wyckoff 4g sites (x, y, 1/2). The first structural investigation of YCrB4 was performed using a single crystalline sample [Kuz'ma, (1970). Kristallografiya. 15, 372–374]. The present study successfully refined all the positional and atomic displacement parameters of the Y, Cr, and B atoms.

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Electronic‐Structure Interpretation: How Much Do We Understand Ce L₃ XANES?

Kvashnina

2024

Chemistry A European J

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Historically, cerium has been attractive for pharmaceutical and industrial applications. The cerium atom has the unique ability to cycle between two chemical states (Ce(III) and Ce(IV)) and drastically adjust its electronic configuration: [Xe] 4f1 5d1 6s2 in response to a chemical reaction. Understanding how electrons drive chemical reactions is an important topic. The most direct way of probing the chemical and electronic structure of materials is by X‐ray absorption spectroscopy (XAS) or X‐ray absorption near‐edge structure (XANES) in high energy resolution fluorescence detection (HERFD) mode. Such measurements at the Ce L3 edge have the advantage of a high penetration depth, enabling in‐situ reaction studies in a time‐resolved manner and investigation of material production or material performance under specific conditions. But how much do we understand Ce L3 XANES? This article provides an overview of the information that can be extracted from experimental Ce L3 XAS/XANES/HERFD data. A collection of XANES data recorded on various cerium systems in HERFD mode is presented here together with detailed discussions on data analysis and the current status of spectral interpretation, including electronic structure calculations.

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Thermoelectricity and electronic properties ofY1−xCexCrB4

Cited by 10 publications

References 59 publications

Thermoelectric Borides: Review and Future Perspectives

Thermoelectric Borides: Review and Future Perspectives

Redetermination of the crystal structure of yttrium chromium tetraboride, YCrB₄, from single-crystal X-ray diffraction data

Electronic‐Structure Interpretation: How Much Do We Understand Ce L₃ XANES?

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Thermoelectricity and electronic properties ofY1−xCexCrB4

Cited by 10 publications

References 59 publications

Thermoelectric Borides: Review and Future Perspectives

Thermoelectric Borides: Review and Future Perspectives

Redetermination of the crystal structure of yttrium chromium tetraboride, YCrB4, from single-crystal X-ray diffraction data

Electronic‐Structure Interpretation: How Much Do We Understand Ce L3 XANES?

Contact Info

Product

Resources

About

Redetermination of the crystal structure of yttrium chromium tetraboride, YCrB₄, from single-crystal X-ray diffraction data

Electronic‐Structure Interpretation: How Much Do We Understand Ce L₃ XANES?