Thermoelectric transport and Hall measurements of low defect Sb<sub>2</sub>Te<sub>3</sub>thin films grown by atomic layer deposition

Zastrow, Sebastian; Gooth, Johannes; Boehnert, Tim; Heiderich, Sonja; Toellner, William; Heimann, Stefan; Schulz, Stephan; Nielsch, Kornelius

doi:10.1088/0268-1242/28/3/035010

Cited by 69 publications

(67 citation statements)

References 26 publications

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“…However, in contrast to previous theoretical model calculations, 7,8 decreased values of S were found experimentally [9][10][11] for Bi 2 Te 3 and Sb 2 Te 3 thin films and were recently corroborated by both model 12,13 and ab initio calculations 4 of our groups.…”

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confidence: 59%

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Impact of the Topological Surface State on the Thermoelectric Transport in Sb₂Te₃ Thin Films

et al. 2015

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Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of ptype Sb 2 Te 3 films are presented. The thicknessdependent electrical conductivity and the thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Contributions of the bulk and the surface to the transport coefficients are separated which enables to identify a clear impact of the topological surface state on the thermoelectric properties. By tuning the charge carrier concentration, a crossover between a surface-state-dominant and a FuchsSondheimer transport regime is achieved. The calculations are corroborated by thermoelectric transport measurements on Sb 2 Te 3 films grown by atomic layer deposition.Almost all proposed three-dimensional (3D) Z 2 topological insulators (TIs) 1,2 are efficient thermoelectric materials. That is not by coincidence, since the link between an efficient thermoelectric * To whom correspondence should be addressed † Institute of Physics, Martin Luther University HalleWittenberg, D-06099 Halle, Germany ‡ Institute of Nanostructure and Solid State Physics, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany ¶ Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany material and the topological character is the inverted band gap. 3,4 The last is due to spin-orbit coupling which switches parity of the bands and leads, if strong enough, to narrow band gaps which are favourable for efficient room-temperature thermoelectrics. Usually strong spin-orbit coupling is mediated by heavy elements which in turn also tend to reduce the material's lattice thermal conductivity, another requirement for desirable thermoelectrics.In the early 90's, Hicks and Dresselhaus 5,6 proposed the concept of low-dimensionality to increase further the thermoelectric efficiency; primarily in thin films, the thermopower S should be enlarged. However, in contrast to previous theoretical model calculations, 7,8 decreased values of S were found experimentally 9-11 for Bi 2 Te 3 and Sb 2 Te 3 thin films and were recently corroborated by both model 12,13 and ab initio calculations 4 of our groups.Thus, to resolve this discrepancy, the potential impact of the surface state (SS) of TIs on thermoelectricity needs to be investigated in more detail. In this Letter, we present ab initio calculations and transport measurements of the thermoelectric properties of Sb 2 Te 3 films at varying thickness, temperature and charge carrier concentration. (1/ cm)(g) Theoretical resultsIn the following, we discuss the doping-and temperature-dependent electrical conductivity and thermopower, as shown in Fig. 1, exemplary for a Sb 2 Te 3 film thickness of 18 quintuple-layer (QL), i.e. about 18 nm. A discussion of films with other thicknesses is given in the supplemental material. 14 The converged electronic structure results serve as input to obtain the thermoelectric transport properties at temperature T and fixed extri...

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confidence: 59%

“…[9][10][11] By means of ab initio electronic structure calculations based on density functional theory we discussed the thermoelectric properties of the p-type TI Sb 2 Te 3 for various film thicknesses and temperatures. The topologically protected surface-state leads to metallic conduction of the thin films even in the semiconducting regime.…”

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confidence: 99%

Impact of the Topological Surface State on the Thermoelectric Transport in Sb₂Te₃ Thin Films

et al. 2015

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“…Additionally, Sb 2 Te 3 is an important p -type element in thermoelectric modules. In early work, Hicks and Dresselhaus proposed that low-dimensional systems could enhance the thermoelectric efficiency through an enlarged thermopower22, but a decreased thermopower value was observed in Sb 2 Te 3 thin films; the discrepancy was resolved in recent work on Sb 2 Te 3 thin films232425. The separate contributions to thermopower from the bulk and the surface could cause a decreased total thermopower26.…”

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Robustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystal

Lee

Cheng

Weng

et al. 2016

Sci Rep

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A topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline Sb2Te2Se single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the Sb2Te2Se compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands. More importantly, the topological surface state and doping level in Sb2Te2Se are difficult to alter for a cleaved surface exposed to air; the robustness of the topological surface state defined in our data indicates that this Sb2Te2Se compound has a great potential for future atmospheric applications.

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“…The nanomechanical properties of these two ALD metal telluride films have been investigated by nanoindentation experiments, and published earlier by Mamun et al [9]. The thermoelectric transport properties including the Seebeck coefficient and electrical conductivity of ALD Bi 2 Te 3 films have been reported by Zastrow et al [10]. …”

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confidence: 99%

Microstructure Analysis of ALD Bi₂Te₃/Sb₂Te₃ Thermoelectric Nanolaminates

et al. 2013

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The fabrication of thermoelectric nanolaminate structures of alternating Bi 2 Te 3 and Sb 2 Te 3 ALD layers for thermoelectric application is reported. Trimethylsilyl telluride ((Me 3 Si) 2 Te), bismuth trichloride (BiCl 3 ) and antimony trichloride (SbCl 3 ) were utilized as chemical ALD precursors for tellurium, bismuth and antimony, respectively. The results of field emission scanning electron microscopy (FE-SEM) indicate that both metal tellurides exhibit the prevalent Volmer-Weber island growth mechanism with characteristic hexagonal crystallites. High resolution TEM Xsection analysis reveals localized epitaxial growth of alternating ALD Bi 2 Te 3 and Sb 2 Te 3 layers within the large islands.

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Thermoelectric transport and Hall measurements of low defect Sb₂Te₃thin films grown by atomic layer deposition

Cited by 69 publications

References 26 publications

Impact of the Topological Surface State on the Thermoelectric Transport in Sb₂Te₃ Thin Films

Impact of the Topological Surface State on the Thermoelectric Transport in Sb₂Te₃ Thin Films

Robustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystal

Microstructure Analysis of ALD Bi₂Te₃/Sb₂Te₃ Thermoelectric Nanolaminates

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Thermoelectric transport and Hall measurements of low defect Sb2Te3thin films grown by atomic layer deposition

Cited by 69 publications

References 26 publications

Impact of the Topological Surface State on the Thermoelectric Transport in Sb2Te3 Thin Films

Impact of the Topological Surface State on the Thermoelectric Transport in Sb2Te3 Thin Films

Robustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystal

Microstructure Analysis of ALD Bi2Te3/Sb2Te3 Thermoelectric Nanolaminates

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Thermoelectric transport and Hall measurements of low defect Sb₂Te₃thin films grown by atomic layer deposition

Impact of the Topological Surface State on the Thermoelectric Transport in Sb₂Te₃ Thin Films

Impact of the Topological Surface State on the Thermoelectric Transport in Sb₂Te₃ Thin Films

Microstructure Analysis of ALD Bi₂Te₃/Sb₂Te₃ Thermoelectric Nanolaminates