Thermoelectric Properties of (Zn_1‐xCd_x)₄Sb₃ Below Room Temperature.

Abstract

Temperature. -The thermoelectric and structural properties of the title compound are studied below 300 K for samples with x = 0.0, 0.1, 0.2, 0.3, and 0.4. The electrical resistivity is found to increase with increasing Cd content x and to be lower below the β→α phase transition. The Seebeck coefficient also increases with x. The β→α phase transition temperature is almost independent of the Cd content. Although the power factor at 300 K has a maximum of 6·10 -6 Wcm -1 K -2 at x = 0.2, the thermoelectric performance is not improved very much. -(NAKAMOTO*, G.; SOUMA, T.; YAMABA, M.; KURISU, M.; J.

Crystal Growth, Thermal Stability and Electrical Transport Property of Double‐Doping (SnCd) System in Single‐Crystal β‐Zn4Sb3

“…The lattice parameters ( a ‐ c ) of the double‐doping (SnCd) system in β‐Zn 4 Sb 3 increase monotonically as the Cd content increased. The larger values of lattice parameters ( a ‐ c ) of the samples are the fact that the introduction of Cd and Sn atoms randomly occupy special occupation sites of Zn and reduce Zn atom in the host, resulting in diminishing the number of the total cation in per unit cell . The similar observation is found in previous works…”

“…The change of lattice parameters ( a ‐ c ) is summarized in Table . Compared with un‐doping β‐Zn 4 Sb 3, the increase of lattice parameters ( a ‐ c ) is in accordance with the different atom radius of the dopants (CdSn), which the atom radius of Cd (1.71 Å) and Sn (1.72 Å) are relatively larger than that of Zn (1.53 Å). The lattice parameters ( a ‐ c ) of the double‐doping (SnCd) system in β‐Zn 4 Sb 3 increase monotonically as the Cd content increased.…”

Preparation and thermoelectric properties of SiO2/β-Zn4Sb3 nanocomposite materials

“…β-Zn 4 Sb 3 is one of the promising thermoelectric materials in the temperature range of 300-700 K due to its low thermal conductivity and good electrical properties [1][2][3] . Recently, some attempts were reported to optimize the thermoelectric performance of β-Zn 4 Sb 3 by substituting Zn with In [4] , Cd [5] , Mg [6] , and Pb [7] or Sb with Te [8] , which brought out the lattice distortion and then decreased the lattice thermal conductivity and increased Seebeck coefficient. However, more and more studies show that the doping is inefficient in improving the thermoelectric performance ofβ-Zn 4 Sb 3 materials.…”