2018
DOI: 10.1088/1674-1056/27/2/026802
|View full text |Cite
|
Sign up to set email alerts
|

Thermoelectric properties of two-dimensional hexagonal indium-VA

Abstract: The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 WThe maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K, which makes In-VA potential TE material working at medium-high temperature.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

2
5
2

Year Published

2020
2020
2024
2024

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 14 publications
(9 citation statements)
references
References 47 publications
(51 reference statements)
2
5
2
Order By: Relevance
“…The computed values of σ α 2 at two different temperatures are depicted as a function of chemical potential. The maximum PF mainly increases with a band-gap decrease, which could be associated with the increased electrical conductivity [74]. Similar to previous results, the PF also shows greater values in p-type doping as compared to n-type doping at higher temperature, and it increases with an increase in the doping level.…”
Section: Thermoelectric Propertiessupporting
confidence: 87%
“…The computed values of σ α 2 at two different temperatures are depicted as a function of chemical potential. The maximum PF mainly increases with a band-gap decrease, which could be associated with the increased electrical conductivity [74]. Similar to previous results, the PF also shows greater values in p-type doping as compared to n-type doping at higher temperature, and it increases with an increase in the doping level.…”
Section: Thermoelectric Propertiessupporting
confidence: 87%
“…It is worth noting that the Boltztrap package evaluates data according to the volume of the unit cell; therefore, in order to obtain volume-independent values of electrical conductivity, electrical–thermal conductivity, and PF, one needs to multiply the data by the volume of the unit cell. For the hexagonal InX (X = P, As, and Sb) structures, it was demonstrated that p-type systems have a higher PF than n-type ones, which is in contrary to our BX systems . Furthermore, in our BX structures, thermoelectric parameters as a function of temperature (Figure ) revealed that the ordering of the result is associated with the incremental atomic number (i.e., BP, BAs, and BSb).…”
Section: Resultscontrasting
confidence: 73%
“…The computed the values of σα 2 at two different temperature is depicted as a function of chemical potential. The maximum PF mainly increases with band gap decreasing which could be associated to the increased electrical conductivity [61]. Similar to previous results the PF also shows larger values in p-type doping as compare to n-type doping at higher temperature and it is increases with doping level increasing.…”
Section: Thermoelectric Propertiessupporting
confidence: 86%