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Lue, Chin Shan; Kuo, Y. K.

doi:10.1103/physrevb.66.085121

Cited by 169 publications

(103 citation statements)

References 23 publications

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“…A thermal hysteresis with ∆T 3K had already been reported in the iso-structural compound Lu 5 Rh 4 Si 10 at the vicinity of the CDW transition [7]. Usually, a first order transition is attributed to a lock-in transition with the lattice of a pre-existing incommensurate CDW at larger temperature, potentially above the room temperature [8].…”

Section: Experimental Methodsmentioning

confidence: 99%

Charge Density Wave and Superconducting Properties in Single Crystals of Lu5Ir4Si10

Leroux

Rodière

Opagiste

2012

J Supercond Nov Magn

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We measured the electrical resistivity from 2K up to 900K on high quality single crystals of Lu5Ir4Si10. A clear thermal hysteresis was found at the onset of the Charge Density Wave (CDW), evidencing the first order nature of the transition. When tantalum is included in the compound, the CDW is destroyed and the superconducting critical temperature is enhanced. Finally, we present specific heat and magnetic penetration depth in the Meissner state. We show that the superconducting properties are very close to a weak coupling BCS superconductor.

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Section: Experimental Methodsmentioning

confidence: 99%

Charge Density Wave and Superconducting Properties in Single Crystals of Lu5Ir4Si10

Leroux

Rodière

Opagiste

2012

J Supercond Nov Magn

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“…In Fe/V off-stoichiometric Fe 2-x V 1+x Al [17][18][19][20][21] , however, the dependence of thermoelectric power S on excess V content x cannot even be qualitatively explained in terms of the rigid-band model, as shown by the open circles in Fig. 2.…”

Section: Introductionmentioning

confidence: 95%

Angle-Resolved Photoemission Analysis of Electronic Structures for Thermoelectric Properties of Off-Stoichiometric Fe<sub>2–x</sub>V<sub>1+x</sub>Al Alloys

et al. 2016

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The electronic states of Heusler (L2 1 )-type off-stoichiometric Fe 2-x V 1+x Al alloys have been investigated by soft x-ray angle-resolved photoelectron spectroscopy (ARPES) to clarify the origin of the remarkable increase in thermoelectric power, which cannot be explained by the rigid-band model. In off-normal and normal ARPES, Fe 2.05 V 0.95 Al shows weakly dispersive bulk bands from the binding energy of 0.3 eV at the Γ point in the Γ-X and Γ-L directions, and an almost dispersionless one around 0.3 eV in the gap of dispersive bulk bands in the Γ-L direction, which is attributed to antisite Fe defects. At the Γ point, the bulk bands do not appear to cross the Fermi level E F , which is consistent with the rigid-band model for excess Fe content, but no band crossing E F is found at the X point. The antisite Fe defect states near E F might push up the band at the X point and cause p-type thermoelectric properties, which is unexpected for the rigid-band model. The change in electronic structures and thermoelectric properties for the off-stoichiometry and substitution by a forth element is discussed.

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“…[13,14] VFe 2 Al displays a large Seebeck coefficient (|S| > 150 µV/K) upon varying the VEC slightly from 24, achieved by introducing Ge [15] or Si [16] to the Al site, varying the V-Al ratio, [17,18,19] and varying the Fe-V ratio. [20,21] In contrast to VFe 2 Al, TiFe 2 Sn is a less explored compound, and the existing literature on TiFe 2 Sn has not indicated significant improvements in Seebeck coefficient upon varying the Ti:Fe ratio. [22,23] This discrepancy between calculations and experimental results is likely the result of anti-site Ti/Fe disorder, as has been suggested by lab X-ray diffraction and Mössbauer studies.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric performance and the role of anti-site disorder in the 24-electron Heusler TiFe₂Sn

Buffon

Laurita

Lamontagne

et al. 2017

J. Phys.: Condens. Matter

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Abstract. Heusler compounds XY 2 Z with 24 valence electrons per formula unit are potential thermoelectric materials, given their thermal and chemical stability and their relatively earth-abundant constituent elements. First principal calculations on this compound suggest semiconducting behavior of TiFe 2 Sn, and a relatively flat conduction band that could be associated with a high Seebeck coefficient upon electron doping. TiFe 2 Sn as a thermoelectric material has been studied via synchrotron Xray and neutron diffraction studies that characterize site order/disorder phenomena. Samples fabricated by a three step processing approach were subjected to high temperature Seebeck and electrical resistivity measurements. Ti:Fe anti-site disorder is present in the stoichiometric compound and these defects are reduced in Ti-rich compositions. Additionally, we investigate control of the Seebeck coefficient through the introduction of carriers through the substitution of Sb on the Sn site in these intrinsically p-type materials. Thermoelectric performance in Heusler TiFe

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Thermoelectric properties of the semimetallic Heusler compoundsFe2−xV1+xM<

Cited by 169 publications

References 23 publications

Charge Density Wave and Superconducting Properties in Single Crystals of Lu5Ir4Si10

Charge Density Wave and Superconducting Properties in Single Crystals of Lu5Ir4Si10

Angle-Resolved Photoemission Analysis of Electronic Structures for Thermoelectric Properties of Off-Stoichiometric Fe<sub>2–x</sub>V<sub>1+x</sub>Al Alloys

Thermoelectric performance and the role of anti-site disorder in the 24-electron Heusler TiFe₂Sn

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Thermoelectric properties of the semimetallic Heusler compoundsFe2−xV1+xM<

Cited by 169 publications

References 23 publications

Charge Density Wave and Superconducting Properties in Single Crystals of Lu5Ir4Si10

Charge Density Wave and Superconducting Properties in Single Crystals of Lu5Ir4Si10

Angle-Resolved Photoemission Analysis of Electronic Structures for Thermoelectric Properties of Off-Stoichiometric Fe<sub>2–x</sub>V<sub>1+x</sub>Al Alloys

Thermoelectric performance and the role of anti-site disorder in the 24-electron Heusler TiFe2Sn

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Thermoelectric performance and the role of anti-site disorder in the 24-electron Heusler TiFe₂Sn