Thermoelectric properties of the p-type Bi2Te3–Sb2Te3–Sb2Se3 alloys fabricated by mechanical alloying and hot pressing

Kim, H.C.; Oh, Tae-Sung; Hyun, Dow-Bin

doi:10.1016/s0022-3697(99)00269-3

Cited by 80 publications

(28 citation statements)

References 11 publications

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“…The bulk Bi 2 Te 3 -based thermoelectric materials are now available by several existing techniques such as unidirectional casting and powder metallurgy. [4][5][6][7] Powder processing, say hot/cold pressing, is an effective technique for fabricating the bulk TE materials. This approach is superior to the conventional unidirectional solidification for single-crystal growth in some aspects.…”

Section: Introductionmentioning

confidence: 99%

“…Two ways are now available for producing powders by either mechanical alloying of the elemental powders or mechanical grinding of the pre-melted ingot. Some early studies [4][5][6] indicated that solid solutions of (Bi 1−x Sb x ) 2 Te 3 over the entire compositional range of Sb are available by powder metallurgy. Transport property measurements demonstrated that the hot-pressed p-type (Bi 1−x Sb x ) 2 Te 3 polycrystals showed room-temperature figure of merit values that were close to or greater than 3.0 × 10 −3 K −1 at the Sb alloying level of 0.70 ≤ x ≤ 0.80.…”

Section: Introductionmentioning

confidence: 99%

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Structure and Transport Properties of (Bi1-xSbx)2Te3 Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Liu

Park

2002

Mater. Trans.

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Mechanical alloying followed by pulse discharge sintering (MA-PDS) has been employed to develop the bulk (Bi 1−x Sb x ) 2 Te 3 thermoelectric materials with various Sb alloying contents. Substitutional solid solutions of (Bi 1−x Sb x ) 2 Te 3 are formed in the whole Sb content range by MA-PDS process. The sintered compacts are dense and have refined microstructures. Systematic investigations on the electrical, thermal and thermoelectric properties reveal that the transport properties of the obtained (Bi 1−x Sb x ) 2 Te 3 samples are quite sensitive to the Sb alloying content. At room temperature, the samples with x < 0.57 exhibit n-type semi-conduction. However, at x > 0.57, the samples become p-type. The pure constituents of Bi 2 Te 3 and Sb 2 Te 3 as well as the Sb-poor, n-type samples exhibit the room-temperature figure of merit of the order of 1.0 × 10 −3 K −1 . High values of figure of merit have been obtained in the Sb-rich, p-type samples. The maximum value of 3.35 × 10 −3 K −1 is attained at x = 0.80, which corresponds to the carrier concentration and Hall mobility of 1.95 × 10 19 cm −3 and 207 cm 2 /Vs, respectively.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structure and Transport Properties of (Bi1-xSbx)2Te3 Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Liu

Park

2002

Mater. Trans.

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“…Thus, the decrease of hole concentration with increasing Bi 2 Te 3 content caused a decrease of and an increase of this tendency was consistent with those reported previously. 2,15,16) As a result, the room temperature power factor ( 2 ) took a maximum value (about 54:8 Â 10 À4 Wm À1 K À2 ) at x ¼ 0:20. There are several factors influencing the carrier concentration after sintering.…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…[2][3][4] For instance, Kim et al 2) prepared ptype (Bi 2 Te 3 ) x (Sb 2 Te 3 ) 1Àx materials in the composition range of x ¼ 0:15 to 0.25 and obtained a maximum Z of 3:05 Â 10 À3 K À1 for x ¼ 0:20. However, some discrepancies are existing in the published work, e.g.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Properties of p-Type (Bi2Te3)x(Sb2Te3)1−x Thermoelectric Materials

et al. 2005

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P-type (Bi 2 Te 3 ) x (Sb 2 Te 3 ) 1Àx thermoelectric materials with various chemical compositions (x ¼ 0:16, 0.20 and 0.24) were fabricated through the zone melting (ZM) method and spark plasma sintering (SPS) technique. The dimensionless figure of merit (ZT ¼ 2 T=) of the zone-melted crystals increased with increasing the Bi 2 Te 3 content (x). Compared to those of the zone-melted crystals with the same chemical composition, further enhancement by 108-115% in the ZT values was obtained through a combination of ZM and SPS techniques. As a result, the optimal figure of merit reached 1.22 at about 350 K for the composition of 24%Bi 2 Te 3 -76%Sb 2 Te 3 with 3 mass% excess Te. The bending strength of the sintered materials was about 65 MPa, which was 5-7 times higher than that of the zone-melted crystals.

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“…[1][2][3][4][5][6][7][8] Improvement of TE performance of these materials requires a high figure of merit, defined by Z = S 2 σ/κ, where S, σ and κ are respectively the Seebeck coefficient, electrical conductivity and thermal conductivity. The product S 2 σ is usually referred to as thermoelectric power factor.…”

Section: Introductionmentioning

confidence: 99%

Influence of P on Microstructure and Thermoelectric Property of Sintered (Bi0.2Sb0.8)2Te3 Alloy

2002

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A combination of mechanical alloying and pulse discharge sintering (MA-PDS) was employed to synthesize the bulk (Bi 0.2 Sb 0.8 ) 2 Te 3 alloys with the P addition up to 2.0 mass%. The effect of P on the microstructure and thermoelectric performance of the compacts were investigated. The added P exists in the alloyed powders and compacts in the form of second phase particles. The dispersed P particles were found to decrease the size of (Bi, Sb) 2 Te 3 crystallites and inhibit the densification of the alloyed powders. When the P content ≥1.0 mass%, (Bi 0.2 Sb 0.8 ) 2 Te 3 /P nanocomposites were developed by the MA-PDS process. Inclusion of a small fraction of P (≤0.1 mass%) is harmless to the thermoelectric performance of the p-type (Bi 0.2 Sb 0.8 ) 2 Te 3 alloy. In the samples with high P contents, in particular, ≥1.0 mass%, however, the increase in the electrical resistivity is much greater than the decrease in the thermal conductivity, finally giving rise to degradation of the room-temperature figure of merit.

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Thermoelectric properties of the p-type Bi2Te3–Sb2Te3–Sb2Se3 alloys fabricated by mechanical alloying and hot pressing

Cited by 80 publications

References 11 publications

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1−<I>x</I></SUB> Thermoelectric Materials

Influence of P on Microstructure and Thermoelectric Property of Sintered (Bi<SUB>0.2</SUB>Sb<SUB>0.8</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Alloy

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Thermoelectric properties of the p-type Bi2Te3–Sb2Te3–Sb2Se3 alloys fabricated by mechanical alloying and hot pressing

Cited by 80 publications

References 11 publications

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1&minus;<I>x</I></SUB> Thermoelectric Materials

Influence of P on Microstructure and Thermoelectric Property of Sintered (Bi<SUB>0.2</SUB>Sb<SUB>0.8</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Alloy

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Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1−<I>x</I></SUB> Thermoelectric Materials