Thermoelectric Properties of SnO2 Ceramics Doped with Sb and Zn

Abstract

Polycrystalline SnO 2 -based samples (Sn 0.97Àx Sb 0.03 Zn x O 2 , x = 0, 0.01, 0.03) were prepared by solid-state reactions. The thermoelectric properties of SnO 2 doped with Sb and Zn were investigated from 300 K to 1100 K. X-ray diffraction (XRD) analysis revealed all XRD peaks of all the samples as identical to the rutile structure, except for the x = 0.03 sample, which had a small amount of Zn 2 SbO 4 as a secondary phase. We found that the power factor of the x = 0.03 sample was significantly improved due to the simultaneous increase in the electrical conductivity and the Seebeck coefficient. A power factor value of $2 9 10 À4 W m À1 K À2 was obtained for the x = 0.03 sample at 1060 K, 126% higher than that for the undoped sample.

Thermoelectric Properties of SnO2 Ceramics Codoped with Sb and Zn Prepared by Reactive Spark Plasma Synthesis Followed by Thermal Treatment

“…The electrical conductivity of the undoped sample showed a weak temperature dependence. This behavior with temperature is very similar to that observed for the undoped SnO 2 prepared by CIP and normal pressure sintering, (19) but the electrical conductivity of the sample in this study was about 1/3 that of the sample in ref. 19.…”

“…The undoped (x = 0) sample consisted of agglomerated particles several sub-micrometers in size, which is smaller than that of previously reported samples prepared by CIP and normal pressure sintering. (19) The grain growth strongly depended on the doping concentration of Sb and Zn. The grain size increased as the amounts of Sb and Zn were increased up to x = 0.05, and then decreased with further increases in x.…”

“…We previously reported the TE properties of SnO 2 ceramics codoped with Sb and Zn, Sn 0.97−x Sb 0.03 Zn x O 2 (x = 0, 0.01, 0.03), where Sb was used as an n-type dopant to increase the number of free electrons and Zn was used as a sintering aid to fabricate high-density samples. (19) The samples were prepared by cold isotropic pressing (CIP) and normal pressure sintering at a temperature of 1573 K for 10 h. We found that the TE power factor of the x = 0.03 sample was improved by the simultaneous increases in electrical conductivity and Seebeck coefficient. The highest TE power factor of the x = 0.03 sample was approximately 2 × 10 −4 Wm −1 K −2 at 1060 K, and this value was 126% higher than that of the undoped sample.…”

Substitution effect of tetravalent and pentavalent elements on thermoelectric properties in In₂O₃-SnO₂ system

“…The P value took a maximum by the 5% SnO 2 mixture and then decreased with the increase in the fraction of SnO 2 . Since many cracks were created and the mass density was relatively low for the Sn 1-x Sb x O 2 , a small amount of ZnO (y=0.015) was added as an auxiliary agent, which is a conventional technique to fabricate ceramics [18]. As a result, the SnO 2 samples as high density as 90% of the ideal one without crack can be fabricated by the Zn addition.…”

Evaluation of new ceramic electrodes based on Sb-doped SnO2 for the removal of emerging compounds present in wastewater

“…Along the last decades, it has been increasingly used in components requiring high chemical corrosion resistance in chemical industry applications [16,17]. In the last field, an important application is obtaining electrodes for electric glass melting furnaces [18,19] and the processing of aluminium by electrolysis [17,20,21]. Stoichiometric tin oxide is a good insulator at room temperature.…”