Thermoelectric properties of Sn doped GeTe thin films

Otoo, Samuel Leumas; Yuan, Pengyue; Wang, Pengfei; Yuan, Yanyan; Jiang, Xiaobao

doi:10.1016/j.apsusc.2019.145025

Cited by 26 publications

(20 citation statements)

References 45 publications

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“…The power factors of the GeTe films can then be derived and are shown in Figure c. Highly competitive power factor values are obtained from the films deposited at 452 and 386 °C, with a maximum value of 40 μW/cm·K 2 achieved at 629 K. This is consistent with the literature regarding high-quality pristine bulk GeTe samples and, to the best of our knowledge, is the highest presented for pristine GeTe in thin-film form. − Such competitive values obtained indicate the high-quality nature of GeTe films produced from the single-source precursor used in this work.…”

Section: Results and Discussionsupporting

confidence: 84%

“…GeTe has been shown to be fabricated into both bulk and thin-film forms through a variety of different techniques. These include high-temperature melting, spark plasma sintering (SPS), , and solid-state reactions. , In addition, deposition of thin-film GeTe has also been reported using sputtering, , thermal evaporation, molecular beam epitaxy, and pulsed laser deposition. , Chemical vapor deposition (CVD) can produce thin films with superior quality compared to those from sputtering techniques in terms of conformity, coverage, and stoichiometry control. Conventionally in CVD, deposition of binary GeTe uses dual precursors, which require careful control to obtain high-quality stoichiometric thin films .…”

Section: Introductionmentioning

confidence: 99%

“…These include high-temperature melting, 14 spark plasma sintering (SPS), 15,16 and solid-state reactions. 17,18 In addition, deposition of thin-film GeTe has also been reported using sputtering, 19,20 thermal evaporation, 21 molecular beam epitaxy, 22 and pulsed laser deposition. 23,24 Chemical vapor deposition (CVD) can produce thin films with superior quality compared to those from sputtering techniques in terms of conformity, coverage, and stoichiometry control.…”

Section: Introductionmentioning

confidence: 99%

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Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe

Robinson

Sethi

Groot

et al. 2021

ACS Appl. Mater. Interfaces

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The homologous series [Ge n Bu3(E n Bu)] (E = Te, Se, S; (1), (3) and (4)) and [Ge n Bu2(Te n Bu)2] (2) have been synthesized as mobile oils in excellent yield (72–93%) and evaluated as single-source precursors for the low-pressure chemical vapor deposition (LPCVD) of GeE thin films on silica. Compositional and structural characterizations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterization via variable-temperature Hall effect measurements is also reported. Given the strong interest in GeTe and its alloys for thermoelectric applications, variable-temperature Seebeck data were also investigated for a series of p-type GeTe films. The data show that it is possible to tune the thermoelectric response through intrinsic Ge vacancy regulation by varying the deposition temperature, with the highest power factor (40 μW/K2cm@629 K) and effective ZT values observed for the films deposited at higher temperatures.

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Section: Results and Discussionsupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe

Robinson

Sethi

Groot

et al. 2021

ACS Appl. Mater. Interfaces

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“…Table summarizes the design routes and experimentally evaluated performance of state-of-the-art solid and flexible thermoelectric films (refs , , , , , , , , , , , − , , , , and − …”

Section: Dimensional Designmentioning

confidence: 99%

Advanced Thermoelectric Design: From Materials and Structures to Devices

2020

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The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano-or microbelts, few-layered nanosheets, nano-or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

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“…389 For amorphous GeTe, increasing Sn content decreased the band gap, and a PF ∼ 2.789 × 10 3 μW m −1 K −2 was achieved at 300 K. For the crystalline film of GeTe, the PF ∼ 1.423 × 10 3 μW m −1 K −2 at 718 K was achieved, as Sn-doping increases effective mass in this case. 390 Sharply peaked DOS of low-dimensional materials are very effective in modifying their electronic transport properties. But it is challenging to achieve such DOS in 3D-bulk materials as they have DOS as a smooth function of energy (DOS ∝ E 1/2 ).…”

Section: Ge Chalcogenides As Te Materialsmentioning

confidence: 99%