Thermoelectric Properties of Single Crystalline B&lt;SUB&gt;4&lt;/SUB&gt;C Prepared by a Floating Zone Method

Gunjishima, Itaru; Akashi, Takaya; Goto, Takashi

doi:10.2320/matertrans.42.1445

Cited by 31 publications

(58 citation statements)

References 17 publications

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“…1(b). The structure of B 6 O is almost the same as that of B 4 C except that (1) the icosahedrons are pure B 12 , and (2) O-O two-atom chains exist at the center of rhombohedrons. There is neither complicated substitution nor wide-ranged non-stoichiometry in B 6 O.…”

Section: Introductionmentioning

confidence: 69%

“…The structure of B 6 O is almost the same as that of B 4 C except that (1) the icosahedrons are pure B 12 , and (2) O-O two-atom chains exist at the center of rhombohedrons. There is neither complicated substitution nor wide-ranged non-stoichiometry in B 6 O. Therefore, it is useful to understand not only the characteristics of B 6 O but also that of B 4 C by comparing B 6 O and B 4 C. Table 1 summarizes the research on B 6 O published in the * 1 Graduate Student, Tohoku University, Present address: Honda R&D Co., Ltd. * 2 Graduate Student, Tohoku University, Present address: Toyota Central R&D Labs., Inc. past.…”

Section: Introductionmentioning

confidence: 69%

“…They have moderately high electrical conductivity, anomalously large Seebeck coefficient and low thermal conductivity as have been reported for boron carbide, [1][2][3][4][5][6] α-AlB 12 7, 8) and B 12 Si. 9) Among these boron-rich borides, boron carbide has been most widely studied.…”

Section: Introductionmentioning

confidence: 97%

“…9) Among these boron-rich borides, boron carbide has been most widely studied. Figure 1 illustrates schematic crystal structures of B 4 C and B 6 O. Boron carbide consists of B 12 or B 11 C icosahedrons at the vertices of a rhombohedral unit cell and three-atom chain of CBC or CBB at the center of the rhombohedron. [10][11][12][13][14][15][16] Boron carbide has a wide nonstoichiometric composition region from B 4 C to B 10.5 C with different B to C ratio in the icosahedrons and three-atom chains.…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Hot-pressed Boron Suboxide (B6O)

et al. 2002

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Boron suboxide (B 6 O) sintered bodies were prepared by a solid state reaction and a hot pressing method. The thermoelectric properties of B 6 O were compared with those of B 4 C. The electrical conductivity was smaller than that of B 4 C, and the Seebeck coefficient was twice as large as that of B 4 C indicating p-type conduction. The hopping conduction of electronic charge carriers was suggested from the temperature dependencies of the electrical conductivity and mobility. The thermal conductivity was greater than that of B 4 C. The thermoelectric dimensionless figure-of-merit increased with increasing temperature, and was 0.62 × 10 −3 at 1000 K. This value was almost in agreement with that of B 4 C.

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Section: Introductionmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Hot-pressed Boron Suboxide (B6O)

et al. 2002

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“…[1][2][3][4][5][6][7][8][9] Major limitation to the widespread use of B 4 C could arise from its mechanical brittleness and poor oxidation resistance. Silicon carbide (SiC) is also a hard and wear resistant material having high oxidation resistance and excellent thermal shock resistance.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Directionally Solidified B4C–TiB2–SiC Ternary Eutectic Composites by a Floating Zone Method and Their Properties

Goto

2005

Mater. Trans.

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Directionally solidified B 4 C-TiB 2 -SiC composites were prepared by a floating zone method using B 4 C, TiB 2 and SiC as starting materials. The B 4 C-TiB 2 -SiC system was ternary eutectic whose eutectic composition was 51.2B 4 C-8.1TiB 2 -40.7SiC (mol%). The ternary eutectic composite showed a lamellar microstructure where B 4 C(104), TiB 2 (100) and SiC(111) planes were perpendicular to the growth direction. The Vickers hardness of the B 4 C-TiB 2 -SiC ternary eutectic composite was 28 to 32 GPa. The electrical conductivity was 6 to 9 Â 10 4 Sm À1 , and the thermal conductivity was 35 to 45 WK À1 m À1 in the temperature range from 298 to 1100 K.

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Thermoelectric Borides: Review and Future Perspectives

Saglik

Mete

Terzi

et al. 2023

Advanced Physics Research

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The conversion of waste heat into electricity plays a vital role in energy harvesting since conventional non‐renewable energy sources have been rapidly approaching the limit of utilization. The thermoelectric (TE) technology relies on converting temperature difference (or waste heat) into electricity or vice versa. The performance of TE materials is gauged by zT = S2T/ρκ, where S, ρ, κ, and T represent the Seebeck coefficient, the electrical resistivity, the total thermal conductivity, and the absolute temperature, respectively. Boron‐based compounds are considered refractory materials due to their high melting points and advanced chemical and mechanical stability. Besides high thermal stability, many borides exhibit intrinsically low thermal conductivity. The discovery of good TE efficiency in boron carbides, where unexpectedly high Seebeck coefficients (S(T) ≈ 250 µVK−1) are observed at high charge carrier densities (≈1021 cm−3), has induced an intense curiosity for the TE properties of other boron‐based compounds. Intermetallic borides with high boron content (>65 at%) are of particular interest among all known TE materials due to their great potential in TE generators, which can operate under extreme environmental conditions (T > 1000 K). This article reviews the TE properties of borides and state‐of‐art TE materials upon boron/borides doping.

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Thermoelectric Properties of Single Crystalline B<SUB>4</SUB>C Prepared by a Floating Zone Method

Cited by 31 publications

References 17 publications

Thermoelectric Properties of Hot-pressed Boron Suboxide (B<SUB>6</SUB>O)

Thermoelectric Properties of Hot-pressed Boron Suboxide (B<SUB>6</SUB>O)

Preparation of Directionally Solidified B<SUB>4</SUB>C–TiB<SUB>2</SUB>–SiC Ternary Eutectic Composites by a Floating Zone Method and Their Properties

Thermoelectric Borides: Review and Future Perspectives

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Thermoelectric Properties of Single Crystalline B<SUB>4</SUB>C Prepared by a Floating Zone Method

Cited by 31 publications

References 17 publications

Thermoelectric Properties of Hot-pressed Boron Suboxide (B<SUB>6</SUB>O)

Thermoelectric Properties of Hot-pressed Boron Suboxide (B<SUB>6</SUB>O)

Preparation of Directionally Solidified B<SUB>4</SUB>C&ndash;TiB<SUB>2</SUB>&ndash;SiC Ternary Eutectic Composites by a Floating Zone Method and Their Properties

Thermoelectric Borides: Review and Future Perspectives

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Preparation of Directionally Solidified B<SUB>4</SUB>C–TiB<SUB>2</SUB>–SiC Ternary Eutectic Composites by a Floating Zone Method and Their Properties