Thermoelectric properties of silicon at high pressures in the region of the semiconductor-metal transition

Shchennikov, Vladimir V.; Popova, S. V.; Misiuk, A.

doi:10.1134/1.1598561

Cited by 9 publications

(10 citation statements)

References 24 publications

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“…[7]. A high-pressure setup made it possible to simultaneously measure applied force, contraction of a sample, anvil's temperature, thermal gradient ∆T and electrical signal from the sample [4,5,8]. The temperature distribution in the anvils for various sample sizes and thermal conductivities [9] was used to estimate the error in the determination of ∆T along a sample.…”

Section: Methodsmentioning

confidence: 99%

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High‐pressure thermopower of PbTe‐based compounds

Ovsyannikov

Shchennikov

2004

Physica Status Solidi (b)

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In the present paper the thermoelectric properties of p‐type PbTe‐based compounds (Pb1–xGaxTe, Pb1–xSnxTe, Pb1–xSixTe, Pb1–xMnxTe, PbTe1–y, Pb1–yTe) have been investigated at high pressure up to ∼12 GPa. Structural phase transitions from cubic NaCl into orthorhombic GeS structure have been observed with thermoelectric measurements. A low sensitivity of thermoelectric properties to high‐pressure treatment has been found for PbSnTe compounds (x ≈ 0.29). For the rest of the samples with a small content of doping atoms a sign inversion and a following maximum of thermoelectric power S have been established at pressures ∼1–3 GPa. The results obtained show the possibility of improving the thermoelectric figure of merit and effectiveness at moderate pressures for PbTe‐based compounds. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

“…Diamond anvils served as heaters and coolers in thermoelectric measurements [7]. Synthetic diamonds served also as electrical outputs to a sample [4,5,7,8]. To take into account the error introduced by the anvils, the sample was replaced by a piece of Pb with the value of thermopower close to zero (S = -1.27 µV/K) at room temperature [10].…”

Section: Methodsmentioning

confidence: 99%

High‐pressure thermopower of PbTe‐based compounds

Ovsyannikov

Shchennikov

2004

Physica Status Solidi (b)

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“…The first high-pressure thermopower S studies of silicon [5][6][7][8] have revealed a sensitivity of S value to the oxygen-related defects in Cz-Si. Thus, a pressure of semiconductor-metal (S-M) phase transition (from sphalerite to b-Sn lattice) was established to depend essentially on oxygen states [6,7]. Also, the oxygen-related defects influence at whole SðPÞ dependence.…”

Section: Introductionmentioning

confidence: 99%

“…Czochralski-grown silicon (Cz-Si) contains interstitial oxygen which is redistributed at annealing both into electrically active oxygen containing clusters and also into electrically passive precipitates associated with structural defects [2][3][4]. The first high-pressure thermopower S studies of silicon [5][6][7][8] have revealed a sensitivity of S value to the oxygen-related defects in Cz-Si. Thus, a pressure of semiconductor-metal (S-M) phase transition (from sphalerite to b-Sn lattice) was established to depend essentially on oxygen states [6,7].…”

Section: Introductionmentioning

confidence: 99%

Micro-characterisation of Si wafers by high-pressure thermopower technique

Ovsyannikov

Shchennikov

Shaydarova

et al. 2006

Physica B: Condensed Matter

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“…In the present work results of high-pressure thermo- [16,17]. A thermal dierence was produced by heating of the anvils.…”

Section: Introductionmentioning

confidence: 99%

High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

2013

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The thermoelectric properties of a set of single crystalline Si wafers with dierent oxygen concentration grown by the Czochralski technique have been studied at ultrahigh pressures up to 25 GPa. The dependence of semiconductormetal transition pressure at Czochralski grown Si on the concentration cO of the interstitial oxygen was found to present a convex curve with the maximum near cO ≈ 9 × 10 17 cm −3 . The high pressure thermoelectric power method seems to be suitable for characterization of impurity-defect structure of Si wafers.For Si1−xGex crystals (1% < x < 3%) the strong changes of both the value and the sign of thermoelectric power have been observed at pressures much less than ones of Si-I → Si-II transition. From nanoindentation data the phase transition Si-I → Si-II, corresponding to semiconductormetal electronic transformation has been detected at the loading up to ≈ 10 mN. These ndings suggest a way for creation of integrated circuits, in which zones with dierent types of conductivity and hence dierent p−n, p−n−p etc. structures may be written by applied stress at nanoscale level, and the control on the value of the above stresses now is possible by the proposed nanoindentation technique.

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Thermoelectric properties of silicon at high pressures in the region of the semiconductor-metal transition

Cited by 9 publications

References 24 publications

High‐pressure thermopower of PbTe‐based compounds

High‐pressure thermopower of PbTe‐based compounds

Micro-characterisation of Si wafers by high-pressure thermopower technique

High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

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