Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires

Nikolaeva, A.; Konopko, L.; Gherghishan, I.; Rogacki, K.; Stachowiak, P.; Jeżowski, A.; Shepelevich, V. G.; Prokoshin, V.; Гусакова, С. В.

doi:10.1134/s1063782619050191

Cited by 4 publications

(5 citation statements)

References 17 publications

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“…The Е ~ 1/d dependence suggests that the increase in the energy gap Е is attributed to the quantum size effect [8], which is observed in both pure Bi wires and semimetallic Bi 1x Sb x wires [11][12][13]. At temperatures of T < T max , the R(T) dependence of the wires with d < 0.5 m undergoes a significant change, namely, a transition from the semiconductor to metallic behavior, which represents the effect of surface states characteristic of TIs.…”

Section: Resultsmentioning

confidence: 99%

“…Both pure Bi wires and Bi-17at%Sb wires of all studied diameters had the (1011) orientation along the wire axis (Fig. 2a) [12][13][14].…”

Section: Methodsmentioning

confidence: 96%

“…Glass-insulated Bi 0.83 Sb 0.17 wires with a thickness of 75 nm to 1 m were prepared by liquid-phase casting in accordance with the Ulitovsky method [12][13][14]. Studies on a scanning electron microscope showed that the samples had a strictly cylindrical shape.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Electron transport, transverse and longitudinal magnetoresistance, and Shubnikov–de Haas oscillations in Bi0.83Sb0.17 topological insulator semiconductor wires

Nikolaeva¹,

Konopko²,

Huber³

et al. 2022

MJPS

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The paper describes results of experimental studies of the dependence of the resistance, transverse and longitudinal magnetoresistance, as well as the Shubnikov–de Haas (SdH) oscillations of Bi0.83Sb0.17 semiconductor single-crystal wires with diameters of (75–1100) nm, as a function of the thickness, in a temperature range of (3.1–300) K at magnetic fields of up to 14 T. The wires were prepared by liquid-phase casting. It has been found that the temperature dependences of the resistance of wires with d < 0.5 m have two regions exhibiting a semiconductor and a metallic behavior of the resistance, the two regions being separated by a maximum, which is shifted to the high-temperature region with a decrease in the wire diameter d. It has been revealed that the energy gap E increases by a factor of 2 with a decrease in wire diameter d, due to the occurrence of the quantum size effect. The “metallic” behavior of conductivity is attributed to surface states characteristic of topological insulators, which is most clearly evident in thin wires at temperatures of T < 50 K. It has been shown that, in the presence of a uniform magnetic field H, the field dependences of the longitudinal and transverse magnetoresistance in quasi-one-dimensional systems can undergo a significant change depending on the ratio of quantum wire radius to the magnetic length R = (ch/eH)1/2, as well as on the decrease in the mean free path of carriers due to scattering on the wire surface. The SdH oscillation periods exhibit anomalies that are typical neither to bulk Bi1xSbx samples nor to semimetallic wires based on Bi1xSbx alloys. This fact points to the essential role of surface states of topological insulators in 1D-systems, which lead to the occurrence of new effects that are not characteristic of other systems.

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Section: Resultsmentioning

confidence: 99%

“…Both pure Bi wires and Bi-17at%Sb wires of all studied diameters had the (1011) orientation along the wire axis (Fig. 2a) [12][13][14].…”

Section: Methodsmentioning

confidence: 96%

See 1 more Smart Citation

Electron transport, transverse and longitudinal magnetoresistance, and Shubnikov–de Haas oscillations in Bi0.83Sb0.17 topological insulator semiconductor wires

Nikolaeva¹,

Konopko²,

Huber³

et al. 2022

MJPS

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“…Apart from this, with the exploration of strong TI like Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 which exhibit remarkable TE properties [24], it was realized that TI systems tend to exhibit decent TE properties. Ever since, several TI systems have been investigated for their TE properties [6][7][8][25][26][27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

“…But, these materials have received scarce attention from TE point of view [39][40][41][42]. Until recently when, SM systems like HgTe, BiTe etc [31,[43][44][45][46][47] were investigated for their TE applications. Inspired from the previous reports on SM materials, we performed in-depth calculations of vibrational, mechanical, thermal and TE transport properties of zincblende AuI apart from its TPT.…”

Section: Introductionmentioning

confidence: 99%

Emergence of −s, −p–d band inversion in zincblende gold iodide topological insulator and its thermoelectric properties

Sattigeri

Gajaria

Jha

et al. 2021

J. Phys.: Condens. Matter

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We employ first-principles calculations to investigate the topological states (TS) and thermoelectric (TE) transport properties of three dimensional (3D) gold iodide (AuI) which belongs to the zincblende family. We explore, semi-metal (SM) to topological conductor (TC) and topological insulator (TI) phase transitions. Under pristine conditions, AuI exhibits Dirac SM nature but, under the influence of mild isotropic compressive pressure the system undergoes electronic quantum phase transition driving it into non-trivial topological state. This state exhibits Dresselhaus like band spin splitting leading to a TC state. In order to realize TI state from the SM state, we break the cubic symmetry of the system by introducing a compressive pressure along (001) crystal direction. The non-trivial TI nature of the system is characterized by the emergence of robust surface states and the Z 2 invariant ν 0 = 1 which indicates a strong TI nature. A novel facet of the phase transition discussed here is, the −s and −p, −d orbital band inversion mechanism which is unconventional as compared to previously explored TI families. This mechanism unravels new path by which TI materials can be predicted. Also, we investigated the lattice and electronic contributions to the TE transport properties. We characterize the TE performance by calculating the figure of merit (zT) and find that, at room temperature (300 K) and for a fixed doping concentration (i.e., n = 1 × 1019 cm−3) the zT is 0.55 and 0.53 for electrons and holes respectively. This is quite remarkable since, higher values of zT are generally predicted at higher temperature scales whereas, zT values as in the present case are desired at room temperatures for various energy applications. The manifestation of non-trivial TS governed by the unconventional band inversion mechanism and the TE properties of AuI make it a unique multi-functional candidate with probable thermoelectric and spintronic applications.

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Low-temperature electrical conductivity of ion-beam irradiated Bi–Sb films

Andrino-Gómez,

Moratalla,

Redondo-Cubero

et al. 2024

Low Temperature Physics

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Bismuth-antimony alloys are among the most studied topological insulators and also have very promising thermoelectric properties. In addition, in the amorphous state they exhibit superconductivity with critical temperatures in the range 6.0–6.4 K. In this work, we have prepared and studied different polycrystalline films of Bi100–xSbx (x = 0, 5, 10, 15), and we have induced, through ion beam irradiation, significant damage in their internal structure with the aim of amorphizing the material. Specifically, we have irradiated Bi ions in the 10–30 MeV range, exploiting the capabilities of a 5 MV ion beam accelerator of tandem type. We have characterized the Bi–Sb films before and after irradiation from a morphological and structural point of view and measured their electrical resistivity from room temperature to near 2 K, to evaluate the influence of the preparation method and degree of disorder. We have found that the studied Bi–Sb system always behaves as a small energy gap semiconductor that follows the empirical Meyer–Neldel rule, which correlates the conductivity prefactor with the exponential value of the energy gap.

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Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires

Cited by 4 publications

References 17 publications

Electron transport, transverse and longitudinal magnetoresistance, and Shubnikov–de Haas oscillations in Bi0.83Sb0.17 topological insulator semiconductor wires

Electron transport, transverse and longitudinal magnetoresistance, and Shubnikov–de Haas oscillations in Bi0.83Sb0.17 topological insulator semiconductor wires

Emergence of −s, −p–d band inversion in zincblende gold iodide topological insulator and its thermoelectric properties

Low-temperature electrical conductivity of ion-beam irradiated Bi–Sb films

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