Thermoelectric properties of quantum dot chains

Yadav, Abhishek; Pipe, Kevin P.; Ye, W.; Goldman, R. S.

doi:10.1063/1.3094029

Cited by 12 publications

(13 citation statements)

References 36 publications

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“…Looking at the III-V compounds family, InP and GaAs based quantum wells have fist attracted some attention for monolithic thermal cooling of laser diodes [5]. If theoretical studies on the thermoelectric properties of III-V QDs have been proposed [6,7], very little thermal conductivity experimental data of such QDs are reported to our knowledge.…”

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confidence: 99%

“…Owing to a relative small lattice mismatch (3.2%), different nanostructure morphologies have been evidenced in this system. On exactly oriented (100) surface, Quantum Dashes (QDashes) or quantum wires (QWires) elongated along the [1][2][3][4][5][6][7][8][9][10] direction nanostructures are easily obtained. The control and preservation of the morphology and the density from layer to layer when close stacking is however difficult [9].…”

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confidence: 99%

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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Salman¹,

Folliot²,

Pouliquen³

et al. 2012

Materials Science and Engineering: B

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International audienceThe growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20-200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results

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confidence: 99%

Section: *Text Only Click Here To View Linked Referencesmentioning

confidence: 99%

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Salman¹,

Folliot²,

Pouliquen³

et al. 2012

Materials Science and Engineering: B

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“…Lower electrical conductivity was observed while maintaining the same Seebeck coefficient. In terms of theoretical exploration, Balandin et al, 27 Yadav et al, 28 and Khitun et al 29 modeled the formation of minibands by solving the Schödinger equation under the envelope function effectivemass approximation in cubic or cuboid QD NC systems. The transport properties based on the Boltzmann transport equation (BTE) show that the minibands could lead to a large Seebeck coefficient and hence the increase of ZT.…”

Section: Introductionmentioning

confidence: 99%

“…The transport properties based on the Boltzmann transport equation (BTE) show that the minibands could lead to a large Seebeck coefficient and hence the increase of ZT. In their works, constant relaxation time 27,28 and bulk relaxation time 29 are used for electrical carriers, which do not consider the quantum confinement effect on electron-phonon scattering in QD. 30 Due to the restriction of energy and momentum conservation in electron-phonon scattering, the relaxation time could be significantly enhanced for quantum-confined electrons, which is often termed as the phonon-bottleneck effect.…”

Section: Introductionmentioning

confidence: 99%

“…A BTE-based semiclassical transport model is used to describe the multiband transport of bulk-like electrons with both intrinsic carrier scatterings and the carrier-interface scattering. 20 Comparing to other works, [27][28][29][30][31][32] our contributions are as follows: (1) we consider for the first time both quantum and classical transport channels in QD NC in which the effects of QDs are introduced as a perturbation of the matrix material. [27][28][29][30][31][32] (2) Our model takes the quantum confinement effect of electrons on both electron-acoustic phonon and electron-optical phonon scatterings into account.…”

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confidence: 99%

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Quantum and classical thermoelectric transport in quantum dot nanocomposites

Zhou

Yang

2011

Journal of Applied Physics

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Spontaneous emission control of single quantum dots by electromechanical tuning of a photonic crystal cavity Appl. Phys. Lett. 101, 091106 (2012) Energy states and carrier transport processes in metamorphic InAs quantum dots J. Appl. Phys. 112, 034309 (2012) High-frequency gate manipulation of a bilayer graphene quantum dot Appl. Phys. Lett. 101, 043107 (2012) Magnetovoltaic effect in a quantum dot undergoing Jahn-Teller transition Appl. Phys. Lett. 101, 023120 (2012) Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime Quantum dot nanocomposites are potentially high-efficiency thermoelectric materials, which could outperform superlattices and random nanocomposites in terms of manufacturing cost-effectiveness and material properties because of the reduction of thermal conductivity due to the phononinterface scattering, the enhancement of Seebeck coefficient due to the formation of minibands, and the enhancement of electrical conductivity due to the phonon-bottleneck effect in electronphonon scattering for quantum-confined electrons. In this paper, we investigate the thermoelectric transport properties of quantum dot nanocomposites through a two-channel transport model that includes the transport of quantum-confined electrons through the hopping mechanism and the semiclassical transport of bulk-like electrons. For the quantum-confined electrons whose wave functions are confined in the quantum dots with overlapping tail extending to the matrix, we develop a tightbinding model together with the Kubo formula and the Green's function method to describe the transport processes of these electrons. The formation of minibands due to the quantum confinement and the phonon-bottleneck effect on carrier-phonon scattering are considered. For transport of bulk-like electrons, a Boltzmann-transport-equation-based semiclassical model is used to describe the multiband transport processes of carriers. The intrinsic carrier scatterings as well as the carrier-interface scattering of these bulk-like electrons are considered. We then apply the two-channel transport model to predict thermoelectric transport properties of n-type PbSe/PbTe quantum dot nanocomposites with PbSe quantum dots uniformly embedded in the PbTe matrix. The dependence of thermoelectric transport coefficients on the size of quantum dots, interdot distance, doping concentration, and temperature are studied in detail. Due to the formation of minibands and the phonon-bottleneck effect on carrier-phonon scattering, we show that simultaneous enhancement of electrical conductivity and Seebeck coefficient can be realized in quantum dot nanocomposites. Our study could shed some light on the design of high-efficiency thermoelectric materials for energy conversion and thermal management.

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Bottom-up solution chemistry approaches for nanostructured thermoelectric materials

et al. 2013

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6 pagesInternational audienceDespite recent progress in the development of the thermoelectric power factor, improvement in the efficiency of thermoelectric materials remains limited. Over the past decade, almost all the significant advances have been made by the development of nanostructured materials. Both theoretical studies and experimental results bring out three main avenues of research for optimizing the engineering of these materials: (i) quantum confinement, (ii) phonon-blocking/electron transmitting and (iii) electron filtering barrier structures. The optimization of one or several of these parameters is dependent on the design of the materials that are very complex to synthesize and, for this reason, many of the studies remain merely of theoretical interest. A material allowing the optimization of all of these parameters is thus proposed. It is based on a nanostructured material (starting from a mesoporous matrix), within which it is possible to control the size and spacing of nanoparticles. In addition, some confined bismuth nanoparticles in this type of structure transform to a cubic phase, making it possible to avoid orientation problems related to the effective masses

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Thermoelectric properties of quantum dot chains

Cited by 12 publications

References 36 publications

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Quantum and classical thermoelectric transport in quantum dot nanocomposites

Bottom-up solution chemistry approaches for nanostructured thermoelectric materials

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