Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)x–(Bi0.5Sb1.5Te3)1−x (x=0–1.0) alloys prepared by spark plasma sintering

Cui, Jiaolin; Xue, H.F.; Xiu, W.J.; Jiang, Liping; Ying, Pengzhan

doi:10.1016/j.jssc.2006.08.016

Cited by 17 publications

(9 citation statements)

References 13 publications

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“…Fig. 2(d) 5 shows the measured specific heat for these samples, which are 2~8% higher than the theoretical value from Dulong-Petit law, depending on the temperatures. The inset of Fig.…”

Section: Methodsmentioning

confidence: 72%

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Studies on the Bi₂Te₃–Bi₂Se₃–Bi₂S₃system for mid-temperature thermoelectric energy conversion

Liu

Lukas

McEnaney

et al. 2013

Energy Environ. Sci.

275

212

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10Bismuth telluride (Bi 2 Te 3 ) and its alloys have been widely investigated as thermoelectric materials for cooling applications at around room temperature. We report a systematic study on many compounds in the Bi 2 Te 3 -Bi 2 Se 3 -Bi 2 S 3 system. All the samples were fabricated by high energy ball milling followed with hot pressing. Among the investigated compounds, Bi 2 Te 2 S 1 shows a peak ZT ~0.8 at 300 o C 15 and Bi 2 Se 1 S 2 ~0.8 at 500 o C. These results show that these compounds can be used for mid-temperature power generation applications. The leg efficiency of thermoelectric conversion for segmented elements based on these n-type materials could potentially reach 12.5% with cold side at 25 o C and hot side at 500 o C if appropriate p-type legs are paired, which could compete well with the state-of-the-art ntype materials within the same temperature range, including lead tellurides, lead selenides, lead sulfides, filled-skutterudites, and half Heuslers. 20 Broader ContextThermoelectric convertor has provided a new class of green energy from solar heat, terrestrial heat, waste heat from both automobile vehicles and industrial operations. Bi 2 Te 3 -based materials have distinguished themself in low-temperature power generation applications. For these applications, the hot side temperature is typically limited to less than 250 o C due to the declining ZT value. For the mid-25 temperature range, PbTe and skutterudite materials were being considered as the candidates. However, the toxicity or thermal stability issue is still the most worrying part for these materials. In this work, we proposed an alternative way by using a segmented leg made from Bi 2 (Te, Se, S) 3 -based materials, which shows a potential leg efficiency of 12.5% with cold side of 25 o C and hot side of 500 o C. It competes well with the state-of-the-art n-type materials within the same temperature range. Specifically, two new compounds, i.e., Bi 2 Te 2 S 1 and Bi 2 Se 1 S 2 , have been identified as the promising materials for the mid-temperature applications.

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“…Fig. 2(d) 5 shows the measured specific heat for these samples, which are 2~8% higher than the theoretical value from Dulong-Petit law, depending on the temperatures. The inset of Fig.…”

Section: Methodsmentioning

confidence: 72%

“…6(d) and (i). Even with the higher thermal conductivity, the 5 ZT values of all the twice-repressed Bi 2 Te 2.7-x Se 0.3 S x samples are still much higher than that of the as-pressed samples. As examples, the enhancement of the peak ZT value for Bi 2 Te 2.3 Se 0.3 S 0.4 is ~14% from ~0.7 (as-pressed) to ~0.8 (twice-repressed).…”

Section: Resultsmentioning

confidence: 82%

Studies on the Bi₂Te₃–Bi₂Se₃–Bi₂S₃system for mid-temperature thermoelectric energy conversion

Liu

Lukas

McEnaney

et al. 2013

Energy Environ. Sci.

275

212

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“…Ag as a substituent at the Bi site can increase the hole carrier concentration. Cui et al [7][8][9][10][11] studied the TE properties of Ag-doped p-type Ag x Bi 0.5 Sb 1.5Àx Te 3 alloys, and found that Ag doping can reduce the lattice thermal conductivity, enhance the transport performance, and increase the dimensionless figure of merit ZT to 1.1. At the same time, Ag can provide electrons to the conduction band, which leads to donor doping due to ionization, thereby forming an n-type semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Ag-Doped n-Type (Bi2−x Ag x Te3)0.96−(Bi2Se3)0.04 Pseudobinary Alloys

Zhang

et al. 2011

Journal of Elec Materi

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n-Type thermoelectric powders of (Bi 2Àx Ag x Te 3 ) 0.96 À(Bi 2 Se 3 ) 0.04 (0 £ x £ 0.05) have been synthesized by mechanical alloying and then consolidated by spark plasma sintering. The analysis results show that the grain size of pure Bi, Te, Ag, and Se powders is decreased to about 1 lm to 0.5 lm after they are mechanically alloyed for 2 h. The power factor of bulk material increases with increasing Ag-doping content, while the trend for the lattice thermal conductivity is the opposite. Bulk (Bi 0.99 Ag 0.04 ) 2 (Te 0.96 Se 0.04 ) 3 after milling for 12 h exhibits a higher power factor, lower thermal conductivity, and thus a higher ZT of 0.74 at 373 K.

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“…Since the ternary Ag 0.365 Sb 0.558 Te alloy exhibits the same cubic structure as AgSbTe 2 with Fm " 3m space group, 8,9 this Ag 0.365 Sb 0.558 Te alloy can presumably be expressed as (AgSbTe 2 ) 0.365 (Sb 2 Te 3 ) 0.0965 and can therefore be considered as a solid solution of AgSbTe 2 and Sb 2 Te 3 , in which the AgSbTe 2 takes the majority proportion. However, note that we cannot exclude the possible formation of four-layer lamellae of type [Ag 0.5 Sb 0.5 ]-Te-[Ag 0.5 Sb 0.5 ]-Te, which corresponds to the AgSbTe 2 structure, where the cation sublattices in the crystal planes are statistically occupied by Sb and Ag atoms.…”

Section: Introductionmentioning

confidence: 99%

“…In this structure, Ag atoms are incorporated as uncharged defects, 10 and the ternary alloy Ag 0.365 Sb 0.558 Te exhibits p-type semiconductor behavior, since the Seebeck coefficient of Ag 0.365 Sb 0.558 Te is positive over the measured temperature range. 8 If Ag 0.365 Sb 0.558 Te is alloyed with GeTe, we expect that some Ge atoms can be incorporated into the Ag-Sb-Te sublattice, because the ionic radius of Ge 4+ (r Ge = 0.053 nm) and the covalent radius of Ge (r Ge = 0.102 nm) are smaller than that of Sb 3+ (r Sb = 0.076 nm) and that of Sb (r Sb = 0.131 nm), 11 respectively, thus leading to increased lattice disorder. Besides, higher valence of Ge 4+ than that of Sb 3+ could enhance the concentration of vacancies (holes), so that transport harmonization between electrons and phonons could be achieved in spite of the fact that the transverse TE property for the Pb-doped AgSbTe 2 alloy remains unchanged.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of the Pseudobinary Alloy (Ag0.365Sb0.558Te)0.975(GeTe)0.025 Prepared by Spark Plasma Sintering

Cui

Yan

et al. 2010

Journal of Elec Materi

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Ag-Sb-Te-Ge-based alloys have received great attention in recent years. In the present work we prepared the pseudobinary alloy (Ag 0.365 Sb 0.558 Te) 0.975 (GeTe) 0.025 using spark plasma sintering and evaluated its thermoelectric (TE) properties over the temperature range from 318 K to 551 K. Rietveld analysis revealed that about 1.3 at.% Ge atoms occupy the Sb sites and that the alloy exhibits the same crystal structure as AgSbTe 2 . By using back-scattered electron imaging, we observed two instead of one phase in the sample. The small white AgSbTe 2 chunks embedded in the matrix can substantially scatter phonons. Compared with the transport properties of Ag 0.365 Sb 0.558 Te, we obtained a slightly increased Seebeck coefficient and reduced thermal conductivity without sacrificing electrical conductivity. The highest TE figure of merit, ZT, was 0.69 at 551 K, whereas that of the ternary alloy Ag 0.365 Sb 0.558 Te was 0.61 at the corresponding temperature, suggesting that (Ag 0.365 Sb 0.558 Te) 0.975 (GeTe) 0.025 has the potential to improve TE performance with optimization of its chemical composition.

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Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)x–(Bi0.5Sb1.5Te3)1−x (x=0–1.0) alloys prepared by spark plasma sintering

Cited by 17 publications

References 13 publications

Studies on the Bi₂Te₃–Bi₂Se₃–Bi₂S₃system for mid-temperature thermoelectric energy conversion

Studies on the Bi₂Te₃–Bi₂Se₃–Bi₂S₃system for mid-temperature thermoelectric energy conversion

Thermoelectric Properties of Ag-Doped n-Type (Bi2−x Ag x Te3)0.96−(Bi2Se3)0.04 Pseudobinary Alloys

Thermoelectric Properties of the Pseudobinary Alloy (Ag0.365Sb0.558Te)0.975(GeTe)0.025 Prepared by Spark Plasma Sintering

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Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)x–(Bi0.5Sb1.5Te3)1−x (x=0–1.0) alloys prepared by spark plasma sintering

Cited by 17 publications

References 13 publications

Studies on the Bi2Te3–Bi2Se3–Bi2S3system for mid-temperature thermoelectric energy conversion

Studies on the Bi2Te3–Bi2Se3–Bi2S3system for mid-temperature thermoelectric energy conversion

Thermoelectric Properties of Ag-Doped n-Type (Bi2−x Ag x Te3)0.96−(Bi2Se3)0.04 Pseudobinary Alloys

Thermoelectric Properties of the Pseudobinary Alloy (Ag0.365Sb0.558Te)0.975(GeTe)0.025 Prepared by Spark Plasma Sintering

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About

Studies on the Bi₂Te₃–Bi₂Se₃–Bi₂S₃system for mid-temperature thermoelectric energy conversion

Studies on the Bi₂Te₃–Bi₂Se₃–Bi₂S₃system for mid-temperature thermoelectric energy conversion