Thermoelectric properties of p-type (Bi2Te3)x(Sb2Te3)1−x prepared via bulk mechanical alloying and hot pressing

Yang, Junyou; Aizawa, Tatsuhiko; Yamamoto, Atsushi; Ohta, Toshiharu

doi:10.1016/s0925-8388(00)01063-x

Cited by 100 publications

(54 citation statements)

References 5 publications

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“…The bulk Bi 2 Te 3 -based thermoelectric materials are now available by several existing techniques such as unidirectional casting and powder metallurgy. [4][5][6][7] Powder processing, say hot/cold pressing, is an effective technique for fabricating the bulk TE materials. This approach is superior to the conventional unidirectional solidification for single-crystal growth in some aspects.…”

Section: Introductionmentioning

confidence: 99%

“…Two ways are now available for producing powders by either mechanical alloying of the elemental powders or mechanical grinding of the pre-melted ingot. Some early studies [4][5][6] indicated that solid solutions of (Bi 1−x Sb x ) 2 Te 3 over the entire compositional range of Sb are available by powder metallurgy. Transport property measurements demonstrated that the hot-pressed p-type (Bi 1−x Sb x ) 2 Te 3 polycrystals showed room-temperature figure of merit values that were close to or greater than 3.0 × 10 −3 K −1 at the Sb alloying level of 0.70 ≤ x ≤ 0.80.…”

Section: Introductionmentioning

confidence: 99%

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Structure and Transport Properties of (Bi1-xSbx)2Te3 Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Liu

Park

2002

Mater. Trans.

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Mechanical alloying followed by pulse discharge sintering (MA-PDS) has been employed to develop the bulk (Bi 1−x Sb x ) 2 Te 3 thermoelectric materials with various Sb alloying contents. Substitutional solid solutions of (Bi 1−x Sb x ) 2 Te 3 are formed in the whole Sb content range by MA-PDS process. The sintered compacts are dense and have refined microstructures. Systematic investigations on the electrical, thermal and thermoelectric properties reveal that the transport properties of the obtained (Bi 1−x Sb x ) 2 Te 3 samples are quite sensitive to the Sb alloying content. At room temperature, the samples with x < 0.57 exhibit n-type semi-conduction. However, at x > 0.57, the samples become p-type. The pure constituents of Bi 2 Te 3 and Sb 2 Te 3 as well as the Sb-poor, n-type samples exhibit the room-temperature figure of merit of the order of 1.0 × 10 −3 K −1 . High values of figure of merit have been obtained in the Sb-rich, p-type samples. The maximum value of 3.35 × 10 −3 K −1 is attained at x = 0.80, which corresponds to the carrier concentration and Hall mobility of 1.95 × 10 19 cm −3 and 207 cm 2 /Vs, respectively.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structure and Transport Properties of (Bi1-xSbx)2Te3 Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Liu

Park

2002

Mater. Trans.

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“…However, some discrepancies are existing in the published work, e.g. Yang et al 3) found that the figure of merit was not sensitive to the composition when x < 0:25 while decreased rapidly with increasing x from 0.25 to 0.30, a similar result was reported by Heon et al 4) Moreover, in the previous work reported so far, the corresponding values have been measured only at room temperature, while measurements on the temperature dependence of thermoelectric properties is essential for understanding the basic transport mechanism involved and providing necessary data for constructing thermoelectric devices for the Peltier cooling or power generation applications.…”

Section: Introductionmentioning

confidence: 95%

“…Bi 2 Te 3 -based solid solutions, including n-type Bi 2 (Te,Se) 3 and p-type (Bi,Sb) 2 Te 3 , are among the most important thermoelectric materials for refrigeration applications around room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and Properties of p-Type (Bi2Te3)x(Sb2Te3)1−x Thermoelectric Materials

et al. 2005

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P-type (Bi 2 Te 3 ) x (Sb 2 Te 3 ) 1Àx thermoelectric materials with various chemical compositions (x ¼ 0:16, 0.20 and 0.24) were fabricated through the zone melting (ZM) method and spark plasma sintering (SPS) technique. The dimensionless figure of merit (ZT ¼ 2 T=) of the zone-melted crystals increased with increasing the Bi 2 Te 3 content (x). Compared to those of the zone-melted crystals with the same chemical composition, further enhancement by 108-115% in the ZT values was obtained through a combination of ZM and SPS techniques. As a result, the optimal figure of merit reached 1.22 at about 350 K for the composition of 24%Bi 2 Te 3 -76%Sb 2 Te 3 with 3 mass% excess Te. The bending strength of the sintered materials was about 65 MPa, which was 5-7 times higher than that of the zone-melted crystals.

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Enhancement of Thermoelectric Figure‐of‐Merit by a Bulk Nanostructuring Approach

Lan

Minnich

Chen

et al. 2010

Adv Funct Materials

836

475

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Recently a significant figure‐of‐merit (ZT) improvement in the most‐studied existing thermoelectric materials has been achieved by creating nanograins and nanostructures in the grains using the combination of high‐energy ball milling and a direct‐current‐induced hot‐press process. Thermoelectric transport measurements, coupled with microstructure studies and theoretical modeling, show that the ZT improvement is the result of low lattice thermal conductivity due to the increased phonon scattering by grain boundaries and structural defects. In this article, the synthesis process and the relationship between the microstructures and the thermoelectric properties of the nanostructured thermoelectric bulk materials with an enhanced ZT value are reviewed. It is expected that the nanostructured materials described here will be useful for a variety of applications such as waste heat recovery, solar energy conversion, and environmentally friendly refrigeration.

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Thermoelectric properties of p-type (Bi2Te3)x(Sb2Te3)1−x prepared via bulk mechanical alloying and hot pressing

Cited by 100 publications

References 5 publications

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1−<I>x</I></SUB> Thermoelectric Materials

Enhancement of Thermoelectric Figure‐of‐Merit by a Bulk Nanostructuring Approach

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Thermoelectric properties of p-type (Bi2Te3)x(Sb2Te3)1−x prepared via bulk mechanical alloying and hot pressing

Cited by 100 publications

References 5 publications

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Structure and Transport Properties of (Bi<SUB>1-x</SUB>Sb<SUB>x</SUB>)<SUB>2</SUB>Te<SUB>3</SUB> Thermoelectric Materials Prepared by Mechanical Alloying and Pulse Discharge Sintering

Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1&minus;<I>x</I></SUB> Thermoelectric Materials

Enhancement of Thermoelectric Figure‐of‐Merit by a Bulk Nanostructuring Approach

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Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1−<I>x</I></SUB> Thermoelectric Materials