Thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds fabricated by spark plasma sintering

Abstract

P-type thermoelectric Bi 0.5 Sb 1.5 Te 3 compounds were prepared by the spark plasma sintering method with temperature ranges of 300-420 • C and powder sizes of ∼75 μm, 76-150 μm, 151-250 μm. As the sintering temperature increased, the electrical resistivity and thermal conductivity of the compound were greatly changed due to an increase in the relative density. The Seebeck coefficient and electrical resistivity were varied largely with decreasing the powder size. Subsequently, the compound sintered at 380 • C with the powders of ∼75μm showed the maximum figure-of-merit of 2.65 × 10 −3 K −1 and the bending strength of 73 MPa.

Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

“…The trends are broadly in agreement with the literature on p-type bismuth telluride based materials produced using SPS and reinforced with nano-scale phases [7,12,14,16,[20][21][22][23]. The data in Figure 4 show generally lower Seebeck coefficient and electrical resistivity than some of the reports in the literature, but the overall performance, indicated by the zT values in Figure 5, are similar.…”

“…66 [23] 90 [12] More typically 1.1 (∥) and 0.8 (⊥) [7,9] Best room temperature values of up to 1.1 (⊥) and 0.8 (∥) quoted [7], typical value 0.9 (⊥) [16,19]. Note: max zT occurs ⊥ , the opposite of directionally solidified material…”

“…Strength is also governed by flaws [10] in common with any brittle solid. Mechanical property improvement has been the justification for the development of polycrystalline materials produced by a variety of processes including hot-pressing [11,12], extrusion [8,13], plasma activated sintering [14,15] and spark plasma sintering (SPS) [7,[16][17][18][19][20][21][22][23][24]. The addition of nanoscale particulate reinforcements (SiC [17,18,23], C 60 [7], multi-wall carbon nanotubes [12] and Al 2 O 3 [22]) have been pursued.…”

Fabrication of Bi2Te3−xSexnanowires with tunable chemical compositions and enhanced thermoelectric properties

“…The EDS spectra in figure S4 demonstrate that the atom ratio in Bi 2 Te 2.57 Se 0.43 NWs is Bi:Te:Se=38:53:8, which is slightly lack of Bi atoms in NWs, however, a slightly excess of Bi atoms in Bi 2 Te 2.7 Se 0.3 NWs. Generally, the lack of Bi atoms in the Bi 2 Te 3 -based alloys will promote the occupation of Te (or Se) on the Bi sites to form the antisite defect Te Bi and contribute electrons [54]. This will increase the carrier concentration in n-type semiconductor.…”

Effect of Temperature and Environmental Aging on the Mechanical Reliability of n- and p-Type Thermoelectric Couples

“…Nowdays, The frequently-used bismuth antimony telluride (BiSbTe) bulk alloys are the p-type material, Bi 0.5 Sb 1.5 Te 3 , and n-type material, Bi 1.8 Sb 0.2 Se 0.15 Te 2.85 . The lead-free solder Sn 96.5 Ag 3.0 Cu 0.5 (SAC305) is commonly employed in assembling electronic couples [8,9].…”