Thermoelectric Properties of Nanostructured p-Mg2Si x Sn1−x (x = 0.2 to 0.4) Solid Solutions

Isachenko, G. N.; Samunin, A. Yu.; Gurieva, E. A.; Fedorov, M. I.; Pshenay-Severin, D. A.; Константинов, П. П.; Kamolova, M. D.

doi:10.1007/s11664-016-4345-4

Cited by 17 publications

(16 citation statements)

References 14 publications

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“…Furthermore, for the Si containing sample (with lower H ) the detrimental influence of the bipolar effect is clearly visible leaving room for some improvement provided that the carrier concentration can be increased further. A comparison with literature data reveals that the Mg 2 Ge 0.4 Sn 0.6 samples have the highest power factor reported for p-type Mg 2 (Si,Ge,Sn)with a maximum of 1.7 × 10 −3 Wm −1 K −2 at 700 K while the best reported Mg 2 (Si,Sn) samples have only 1.4 × 10 −3 Wm −1 K −2 [35][36][37].The thermoelectric figure of merit for the Mg 2 Si 0.4 Sn 0.6 samples is comparable to the previous reports with similar compositions [35][36][37]42], with the optimum carrier concentration comparable to that in [37], but significantly lower than the values reported in [35,36,42]. Carrier mobility and lattice thermal conductivity are roughly comparable but show some variations between the different reports.…”

Section: Discussionsupporting

confidence: 82%

“…Some insight on fundamental material parameters can be gained by analyzing the data in the frame work of a single parabolic band model [47]. This was found to be well suitable for the n-type material [8,48] and often assumed to be valid for the p-type material [42,49]. However, there is some debate whether this is applicable or two or more bands should be taken into account [35,50].We will thus employ it but discuss exceptions from the expected behavior.…”

Section: Discussionmentioning

confidence: 99%

“…This can be compensated by segregation of Sn, leading to the observed secondary phase peaks in the XRD data. As Mg 2 Sn is less stable than Mg 2 Si or Mg 2 Ge [42,43]it is plausible that elemental Sn segregates rather than Si or Ge. The results for the Mg 2 Si 0.4 Sn 0.6 samples are comparable.…”

Section: Densitymentioning

confidence: 99%

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Thermoelectric performance of Li doped, p-type Mg2(Ge,Sn) and comparison with Mg2(Si,Sn)

et al. 2016

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Solid solutions with chemical formulaMg 2 (Si,Ge,Sn) are promising thermoelectric materials with very good properties for the n-type material but significantly worse for the p-type. For power generation applications good n-and p-type materials are required and it has been shown recently that Li doping can enhance the carrier concentration and improve the thermoelectric properties for p-type Mg 2 Si 1x Sn x .We have investigated the potential of p-type Mg 2 (Ge,Sn) by optimizing Mg 2 Ge 0.4 Sn 0.6 using Li as dopant. We were able to achieve high carrier concentrations (1.4 × 10 20 cm −3) and relatively high hole mobilities resulting in high power factors of 1.7 × 10 −3 W m −1 K −2 at 700 K, the highest value reported so far for this class of material. Exchanging Ge by Si allows for a systematic comparison of Mg 2 (Ge,Sn) with Mg 2 (Si,Sn) and shows that Si containing samples exhibit a lower power factor but also a lower thermal conductivity resulting in comparable thermoelectric figure-of-merit. The data is furthermore analyzed in the framework of a single parabolic band model to gain insight on the effect of composition on band structure. 2 , here is the electrical conductivity, the thermal conductivity, the Seebeck coefficient, and the absolute temperature. A large fraction of the potentially available waste heat can be found in the mid-temperature region

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Section: Discussionsupporting

confidence: 82%

Section: Discussionmentioning

confidence: 99%

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Thermoelectric performance of Li doped, p-type Mg2(Ge,Sn) and comparison with Mg2(Si,Sn)

et al. 2016

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“…Our study shows that these impurities yield one hole per dopant atom up to 2.5% Ga and 1.5% Li. Alloy Mg 2 Si 0.3 Sn 0.7 doped with these impurities has a maximum ZT of up to 0.45 at 650 K [4,68].…”

Section: Figure Of Merit Of P-type Mg 2 X Solid Solutionsmentioning

confidence: 99%

Efficient Thermoelectric Materials Based on Solid Solutions of Mg2X Compounds (X = Si, Ge, Sn)

Zaĭtsev¹,

Isachenko²,

Бурков³

2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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The silicides have obvious atractive characteristics that make them promising materials as thermoelectric energy converters. The constituting elements are abundant and have low price, many of compounds have good high temperature stability. Therefore, considerable eforts have been made, especially in the past 10 years, in order to develop eicient silicide-based thermoelectric materials. These eforts have culminated in creation of Mg 2 (Si-Sn) n-type thermoelectric alloys with proven maximum thermoelec-tric igure of merit ZT of 1.3. This success is based on combination of two approaches to maximize the thermoelectric performance: the band structure engineering and the alloying. In this chapter, we review data on crystal and electronic structure as well as on the thermoelectric properties of Mg 2 X compounds and their solid solutions.

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“…Результаты исследования термоэлектрических свойств этих твердых растворов с дырочным типом проводимости гораздо скромнее. Термоэлектрическая добротность составляет всего 0.5 [3,4]. Для обоих типов проводимости твердые растворы со стороны станнида магния имеют более высокую термоэлектрическую добротность.…”

Section: Introductionunclassified

Термоэлектрические свойства твердого раствора n-Mg-=SUB=-2-=/SUB=-(SiGe)-=SUB=-0.8-=/SUB=-Sn-=SUB=-0.2-=/SUB=-

Isachenko¹,

Самунин²,

Константинов³

et al. 2019

Физика И Техника Полупроводников

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High values of the thermoelectric figure of merit ( ZT = 1.5) in Mg_2Si–Mg_2Sn solid solutions are caused by a low thermal conductivity and a complex band structure, which is optimal at the ratio of solid-solution components of 40% Mg_2Si and 60% Mg_2Sn. However, the presence of magnesium stannide in a high concentration impairs the mechanical properties and chemical stability of the material limiting its application at high temperatures. Magnesium silicide has a higher stability but a lower figure of merit. The figure of merit is much lower in Mg_2Si-rich solid solutions and amounts to ZT ~ 1. The possibility of increasing ZT in the Mg_2Si_0.8Sn_0.2 solid solution with the additional inclusion of Mg_2Ge in small quantities is investigated here. Samples of Mg_2(Si_1 –_ x Ge_ x )_0.8Sn_0.2 ( x < 0.03) solid solution are prepared by hot pressing. The temperature dependences of the coefficients of the thermoelectric power, electrical conductivity, and thermal conductivity are measured in the range of 300–800 K. An increase in the thermoelectric figure of merit to ZT = 1.1 is shown at T = 800 K in the Mg_2Si_0.78Ge_0.02Sn_0.2〈Sb〉 solid solution.

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Thermoelectric Properties of Nanostructured p-Mg2Si x Sn1−x (x = 0.2 to 0.4) Solid Solutions

Cited by 17 publications

References 14 publications

Thermoelectric performance of Li doped, p-type Mg2(Ge,Sn) and comparison with Mg2(Si,Sn)

Thermoelectric performance of Li doped, p-type Mg2(Ge,Sn) and comparison with Mg2(Si,Sn)

Efficient Thermoelectric Materials Based on Solid Solutions of Mg2X Compounds (X = Si, Ge, Sn)

Термоэлектрические свойства твердого раствора n-Mg-=SUB=-2-=/SUB=-(SiGe)-=SUB=-0.8-=/SUB=-Sn-=SUB=-0.2-=/SUB=-

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