Thermoelectric properties of n-type Cu Bi2S3 materials fabricated by plasma activated sintering

Yang, Jian; Yu, Liuxu; Wang, Tingting; Yan, Junnan; Liu, Guiwu; Shi, Zhongqi; Qiao, Guanjun

doi:10.1016/j.jallcom.2018.11.343

Cited by 18 publications

(15 citation statements)

References 44 publications

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“…The negative sign of R H confirms that the majority of the charge carriers are electrons in these nanocomposites, and obtained carrier densities are listed in Table S4, well agreeing with the negative sign of thermopower (Figure 6b) and those of earlier reports. 5,[14][15][16]33 The obtained temperature-dependent n for BS245a and BS245b increases exponentially with increasing temperature (Figure 6c). This confirms that the exponential decrease in ρ with increasing temperature above 100 K is due to an increase in n. In ρ measurements, an applied electric current will prefer to flow via a less resistive path made by internally connected Bi-shell/Bi NPs on the surface of Bi 2 S 3 in BS245, BS245a, and BS245b.…”

Section: Field Emission Scanning Electron Microscopy (Fesem)mentioning

confidence: 87%

“…The electrical resistivity (ρ) of compressed pellet of BS200 is very high, not shown here, because it contains nearly 99.4% phase fraction of Bi 2 S 3 consistent with an earlier report. 4 For reduction of ρ of Bi 2 S 3 , several efforts have therefore been already made 4,13,14 with the suggestion that ρ can be controlled with the creation of sulfur vacancies using vacuum annealing, 13 hot press, 4 hot isostatic press, and SP sintering 5 with however less success. We discovered a new way to reduce it with the formation of Bi 2 S 3 -Bi composites.…”

Section: Field Emission Scanning Electron Microscopy (Fesem)mentioning

confidence: 99%

“…This significant phonon scattering concept is in well accordance with earlier reports. 3,[8][9][10][11][12][13][14]41,42 The shape and position of a peak in the κ of crystalline materials at a low temperature, observed normally due to minimum phonon−phonon scattering, are highly sensitive to point defects. 22 Such a hump centered at 40 K is obviously observed in crystalline Bi NPs, whereas it gets suppressed for Bi 2 S 3 -Bi nanocomposites (Figure 8b,c) due to the combined effects of point defect scattering, reduction of average crystallite size, and mass density (Table S1).…”

Section: Field Emission Scanning Electron Microscopy (Fesem)mentioning

confidence: 99%

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Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi₂S₃-Bi Nanocomposites

Tarachand

Okram

et al. 2020

ACS Appl. Mater. Interfaces

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This is the first report on the enhanced thermoelectric (TE) properties of novel reaction-temperature (T Re ) and duration-induced Bi 2 S 3 -Bi nanocomposites synthesized using a facile one-step polyol method. They are well characterized as nanorod composites of orthorhombic Bi 2 S 3 and rhombohedral Bi phases in which the latter coats the former forming Bi 2 S 3 -Bi core− shell-like structures along with independent Bi nanoparticles. A very significant observation is the systematic reduction in electrical resistivity ρ with a whopping 7 orders of magnitude (∼10 7 ) with just reaction temperature and duration increase, revealing a promising approach for the reduction of ρ of this highly resistive chalcogenide and hence resolving the earlier obstacles for its thermoelectric application potentials in the past few decades. Most astonishingly, a TE power factor at 300 K of the highest Bi content nanocomposite pellet, made at 27 °C using ∼900 MPa pressure, is 3 orders of magnitude greater than that of hot-pressed Bi 2 S 3 . Its highest ZT at 325 K of 0.006 is over twice of that of similarly prepared CuS or Ag 2 S-based nanocomposites. A significantly improved TE performance potential near 300 K is demonstrated for these toxic-free and rare-earth element-free TE nanocomposites, making the present synthesis method as a pioneering approach for developing enhanced thermoelectric properties of Bi 2 S 3 -based materials without extra sintering steps.

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Section: Field Emission Scanning Electron Microscopy (Fesem)mentioning

confidence: 87%

Section: Field Emission Scanning Electron Microscopy (Fesem)mentioning

confidence: 99%

Section: Field Emission Scanning Electron Microscopy (Fesem)mentioning

confidence: 99%

See 1 more Smart Citation

Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi₂S₃-Bi Nanocomposites

Tarachand

Okram

et al. 2020

ACS Appl. Mater. Interfaces

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“…Both the ZT max (1.12 at 773 K) and ZT ave (0.72 in 323–773 K) values of as-fabricated ho C- he S nanocomposite of Pnma Bi 2 SeS 2 - Pnnm Bi 2 SeS 2 are much higher than previously reported Bi 2 SeS 2 and Bi 2 S 3 -based materials, and other reported sulfide compounds (Fig. 7(e,f) ) 8 – 11 , 24 , 37 , 42 – 48 . Our work shows that the ho C- he S nanocomposite of Pnma Bi 2 SeS 2 - Pnnm Bi 2 SeS 2 is a promising TE material.…”

Section: Resultsmentioning

confidence: 50%

“…The largest PF of ~7.39 μW cm −1 K −2 at 773 K is achieved by Bi 2 Se 1-x Br x S 2 ( x = 0.12). This value is seven times higher than that of pure Bi 2 SeS 2 and is also the highest value reported thus far among Bi 2 SeS 2 and Bi 2 S 3 -based materials reported in the literature 8 – 11 .…”

Section: Resultsmentioning

confidence: 51%

Homo-composition and hetero-structure nanocomposite Pnma Bi2SeS2 - Pnnm Bi2SeS2 with high thermoelectric performance

Jabar

Zheng

et al. 2021

Nat Commun

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Nanocomposite engineering decouples the transport of phonons and electrons. This usually involves the in-situ formation or ex-situ addition of nanoparticles to a material matrix with hetero-composition and hetero-structure (heC-heS) interfaces or hetero-composition and homo-structure (heC-hoS) interfaces. Herein, a quasi homo-composition and hetero-structure (hoC-heS) nanocomposite consisting of Pnma Bi2SeS2 - Pnnm Bi2SeS2 is obtained through a Br dopant-induced phase transition, providing a coherent interface between the Pnma matrix and Pnnm second phase due to the slight structural difference between the two phases. This hoC-heS nanocomposite demonstrates a significant reduction in lattice thermal conductivity (~0.40 W m−1 K−1) and an enhanced power factor (7.39 μW cm−1 K−2). Consequently, a record high figure-of-merit ZTmax = 1.12 (at 773 K) and a high average figure-of-merit ZTave = 0.72 (in the range of 323–773 K) are achieved. This work provides a general strategy for synergistically tuning electrical and thermal transport properties by designing hoC-heS nanocomposites through a dopant-induced phase transition.

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Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi₂S₃

Yang,

Ye,

Zhang

et al. 2023

Adv Funct Materials

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Bismuth sulfide (Bi2S3) is a promising thermoelectric material with earth‐abundant, low‐cost, and environment‐friendly constituents. However, it shows poor thermoelectric performance due to its extremely low electrical conductivity derived from the low electron concentration. Here, a high‐performance Bi2S3‐based material is reported to benefit from the Fermi level tuning by Ag and Cl co‐doping and defect engineering by introducing dense low‐angle grain boundaries. Both Ag and Cl act as donors in Bi2S3, upshifting the Fermi level. This increases the electron concentration without degrading the electron mobility, thereby obtaining improved electrical conductivity. The electron localization function (ELF) contour map indicates that interstitial Ag causes electron delocalization, showing higher electron mobility in Bi2S3. More importantly, dense low‐angle grain boundaries block phonon propagation, yielding an ultralow lattice thermal conductivity of 0.30 W m−1 K−1. Consequently, a record ZT value of ≈0.9 at 676 K is achieved in the Bi2Ag0.01S3‐0.5%BiCl3 sample.

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Thermoelectric properties of n-type Cu Bi2S3 materials fabricated by plasma activated sintering

Cited by 18 publications

References 44 publications

Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi₂S₃-Bi Nanocomposites

Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi₂S₃-Bi Nanocomposites

Homo-composition and hetero-structure nanocomposite Pnma Bi2SeS2 - Pnnm Bi2SeS2 with high thermoelectric performance

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi₂S₃

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Thermoelectric properties of n-type Cu Bi2S3 materials fabricated by plasma activated sintering

Cited by 18 publications

References 44 publications

Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi2S3-Bi Nanocomposites

Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi2S3-Bi Nanocomposites

Homo-composition and hetero-structure nanocomposite Pnma Bi2SeS2 - Pnnm Bi2SeS2 with high thermoelectric performance

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi2S3

Contact Info

Product

Resources

About

Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi₂S₃-Bi Nanocomposites

Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi₂S₃-Bi Nanocomposites

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi₂S₃