2015
DOI: 10.1088/2053-1591/2/5/055903
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Thermoelectric properties of Mg3Sb2−xBixsingle crystals grown by Bridgman method

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Cited by 33 publications
(25 citation statements)
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“…5), which is claimed to be in fair agreement with optical transmission measurement of 0.96 eV. 6 Defect formation energies, and therefore, free carrier concentrations are sensitive to the band gap. Mg 3 Sb 2 is an indirect, small band gap semiconductor.…”
Section: Band Gap Is Overestimatedsupporting
confidence: 73%
“…5), which is claimed to be in fair agreement with optical transmission measurement of 0.96 eV. 6 Defect formation energies, and therefore, free carrier concentrations are sensitive to the band gap. Mg 3 Sb 2 is an indirect, small band gap semiconductor.…”
Section: Band Gap Is Overestimatedsupporting
confidence: 73%
“…In addition, the average band mass ( m * b = 0.24 m e , estimated from m * = 0.5 m e , Figure b) is found to be small in EuZn 2 Sb 2 as well, which leads the hole mobility to be as high as 200 cm 2 V −1 s −1 at room temperature (Figure d) . It should be noted that single‐crystalline Mg 3 Sb 2 and its derivatives may show an even higher mobility . Due to the low valence band degeneracy ( N V = 1), p‐type Mg 3 Sb 2 shows a significantly lower power factor than that of n‐type …”
Section: Band Structure and Band Engineeringmentioning
confidence: 94%
“…In a previous work by Kim et al, Mg3Sb2-xBix single crystals were grown by using the Bridgman method and the electrical and thermal transport properties below room temperature were reported. [39] Surprisingly, they reported a huge anisotropy in room temperature electrical resistivity ρ of Mg3Bi2 single crystal with the out-of-plane ρ 100 times larger than the in-plane ρ. [39] The in-plane room temperature carrier mobility of Mg3Bi2 single crystal was reported to be only about 1 cm 2 V -1 s -1 .…”
Section: Introductionmentioning
confidence: 99%
“…[39] Surprisingly, they reported a huge anisotropy in room temperature electrical resistivity ρ of Mg3Bi2 single crystal with the out-of-plane ρ 100 times larger than the in-plane ρ. [39] The in-plane room temperature carrier mobility of Mg3Bi2 single crystal was reported to be only about 1 cm 2 V -1 s -1 . [39] As Mg3Bi2 was predicted to be a semimetal, such low carrier mobility in its single crystalline form is unexpected.…”
Section: Introductionmentioning
confidence: 99%
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