Thermoelectric properties of magnesium silicide fabricated using vacuum plasma thermal spray

Fu, Gaosheng; Zuo, Lei; Longtin, Jon P.; Nie, Chao Yin; Gambino, R. J.

doi:10.1063/1.4825045

Cited by 12 publications

(5 citation statements)

References 31 publications

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“…The positive temperature dependence of electrical conductivity at high temperature is due to an increase in carrier concentration. Our calculation at zero pressure shows reasonable agreement with data reported by Fu et al [50] Figure 4(c) shows the variation of electronic thermal conductivity with temperature. The electronic contribution of thermal conductivity directly depends upon carrier concentration, according to the following equation:…”

Section: Thermoelectric Propertiessupporting

confidence: 91%

Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

Kaur

Kumar

2016

Chinese Phys. B

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We study the effect of pressure on electronic and thermoelectric properties of Mg 2 Si using the density functional theory and Boltzmann transport equations. The variation of lattice constant, band gap, bulk modulus with pressure is also analyzed. Further, the thermoelectric properties (Seebeck coefficient, electrical conductivity, electronic thermal conductivity) have been studied as a function of temperature and pressure up to 1200 K. The results show that Mg 2 Si is an n-type semiconductor with a band gap of 0.21 eV. The negative value of the Seebeck coefficient at all pressures indicates that the conduction is due to electrons. With the increase in pressure, the Seebeck coefficient decreases and electrical conductivity increases. It is also seen that, there is practically no effect of pressure on the electronic contribution of thermal conductivity. The paper describes the calculation of the lattice thermal conductivity and figure of merit of Mg 2 Si at zero pressure. The maximum value of figure of merit is attained 1.83 × 10 −3 at 1000 K. The obtained results are in good agreement with the available experimental and theoretical results.

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Section: Thermoelectric Propertiessupporting

confidence: 91%

Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

Kaur

Kumar

2016

Chinese Phys. B

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“…Recently, high-purity Mg 2 Si has been synthesized by Akasaka et al 29) Consequently, research on the TE properties of Mg 2 Si as an environmentally friendly semiconductor has been accelerated. [30][31][32][33][34][35][36][37] The phase diagram of Mg 2 Si is shown in Fig. 10.…”

Section: Magnesium Silicidementioning

confidence: 99%

Development of thermoelectric materials using high-pressure synthesis technique

Sekine

Mori

2017

Jpn. J. Appl. Phys.

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Thermoelectric materials, which convert heat energy directly into electricity, play an important role in providing globally sustainable energy. In recent years, much effort has been exerted in improving thermoelectric efficiency using various modern synthesis methods. The high-pressure synthesis method has various advantages such as the possibility of synthesizing new materials with impossible structures and compositions at ambient pressure. In this review, we will focus on exploring new compounds using a high-pressure apparatus. The high-pressure synthesis and thermoelectric measurement technique will be discussed. In addition, in-situ X-ray diffraction experiments under high temperature and high pressure to determine the conditions for high-pressure synthesis will be discussed. Finally, the thermoelectric properties of several compounds (skutterudites and magnesium silicide) prepared under high pressure will be reviewed.

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“…For the n-type material, the highest value of ZT was achieved for antimony and tin doping (0.7 at 770 K), and in the case of p-type addition of silver resulted in ZT of 0.35 at 770 K. achieve a power factor of 7.8 • 10 −6 Wcm −1 K −2 at 373 K [19]. Fu et al suggested the vacuum plasma thermal spray (VPS) as a potential deposition technique for thermoelectric materials [20]. They obtained samples of Mg 2 Si with maximum ZT = 0.16 at 700 K.…”

Section: Introductionmentioning

confidence: 99%

Bulletin of the Polish Academy of Sciences: Technical Sciences

Bucholc

Kaszyca

Śpiewak

et al. 2022

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Doping is one of the possible ways to significantly increase the thermoelectric properties of many different materials. It has been confirmed that by introducing bismuth atoms into Mg sites in the Mg 2 Si compound, it is possible to increase career concentration and intensify the effect of phonon scattering, which results in remarkable enhancement in the figure of merit (ZT) value. Magnesium silicide has gained scientists' attention due to its nontoxicity, low density, and inexpensiveness. This paper reports on our latest attempt to employ ultrafast selfpropagating high-temperature synthesis (SHS) followed by the spark plasma sintering (SPS) as a synthesis process of doped Mg 2 Si. Materials with varied bismuth doping were fabricated and then thoroughly analyzed with the laser flash method (LFA), X-ray diffraction (XRD), scanning electron microscopy (SEM) with an integrated energy-dispersive spectrometer (EDS). For density measurement, the Archimedes method was used. The electrical conductivity was measured using a standard four-probe method. The Seebeck coefficient was calculated from measured Seebeck voltage in the sample subjected to a temperature gradient. The structural analyses showed the Mg 2 Si phase as dominant and Bi 2 Mg 3 located at grain boundaries. Bismuth doping enhanced ZT for every dopant concentration. ZT = 0.44 and ZT=0.38 were obtained for 3wt% and 2wt% at 770 K, respectively.

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Thermoelectric properties of magnesium silicide fabricated using vacuum plasma thermal spray

Cited by 12 publications

References 31 publications

Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

Development of thermoelectric materials using high-pressure synthesis technique

Bulletin of the Polish Academy of Sciences: Technical Sciences

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