Thermoelectric properties of Lu-doped n-type Lu Bi2-Te2.7Se0.3 alloys

Cao, Ruijuan; Song, Hang; Gao, Wenxian; Li, Erying; Li, Xinjian; Hu, Xing

doi:10.1016/j.jallcom.2017.08.103

Cited by 25 publications

(5 citation statements)

References 21 publications

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“…Similarly, lutetium and selenium dual substitution in Lu x Bi 2− x Te 2.7 Se 0.3 reported by Cao et al. [ 40 ] for 0 ≤ x ≤ 0.3 showed no evolution of extra XRD peaks. This is because the layered structures and flexibility of Bi 2 Te 3 materials enable the accommodation of foreign materials.…”

Section: Resultssupporting

confidence: 59%

“…More importantly, indium substitution in bismuth (Bi 2−x In x Te 3 for x = 0.375) reported by Liu et al [39] still retained the hexagonal structure of the Bi 2 Te 3 system. Similarly, lutetium and selenium dual substitution in Lu x Bi 2−x Te 2.7 Se 0.3 reported by Cao et al [40] for 0 ≤ x ≤ 0.3 showed no evolution of extra XRD peaks. This is because the layered structures and flexibility of Bi 2 Te 3 materials enable the accommodation of foreign materials.…”

Section: Wwwadvelectronicmatdesupporting

confidence: 57%

See 1 more Smart Citation

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Musah

Novitskii

Serhiienko

et al. 2021

Adv Elect Materials

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Bismuth chalcogenides are promising materials for thermoelectric (TE) application due to their high power factor (product of the square of the Seebeck coefficient and electrical conductivity). However, their high thermal conductivity is an issue of concern. Single doping has proven to be useful in improving TE performance in recent years. Here, it is shown that dual isovalent doping shows the synergistic effect of thermal conductivity reduction and electron density control. The insertion of large atoms in the layered Bi2Te3 structure distorts the crystal lattice and contributes significantly to phonon scattering. The ultralow thermal conductivity (KT = 0.35 W m−1 K−1 at 473 K) compensates for the low power factor and thus enhances TE performance. The density functional theory electronic structure calculation results reveal deep defects states in the valence band, which influences the electronic transport properties of the system. Therefore, the dual dopants (indium and antimony) show a coupled effect of improvement in the density of state near the Fermi level and reduction in the conduction band minimum, thus enhancing electron density. Numerically, it is demonstrated that the dual doping favors acoustic phonon scattering and thus drastically reduces the thermal conductivity.

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Section: Resultssupporting

confidence: 59%

Section: Wwwadvelectronicmatdesupporting

confidence: 57%

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Musah

Novitskii

Serhiienko

et al. 2021

Adv Elect Materials

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show abstract

“…It also can be seen that, with the increasing content of Se element, the morphology of the nanosheets has changed from wafer shape to hexagonal sheet. This may be caused by the fact that Se and Te are the same group element, and the elemental properties are not much different, which contributes to the formation of the regular hexagon [24]. However, due to the agglomeration of the nanosheets, it is difficult to identify their size and distribution.…”

Section: Resultsmentioning

confidence: 99%

Enhanced thermoelectric properties of hydrothermally synthesized n-type Se&Lu-codoped Bi2Te3

Shi

Zhang

et al. 2020

J Adv Ceram

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N-type Se&Lu-codoped Bi2Te3 nanopowders were prepared by hydrothermal method and sintered by spark plasma sintering technology to form dense samples. By further doping Se element into Lu-doped Bi2Te3 samples, the thickness of the nanosheets has the tendency to become thinner. The electrical conductivity of Lu0.1Bi1.9Te3−xSex material is reduced with the increasing Se content due to the reduced carrier concentration, while the Seeback coefficient values are enhanced. The lattice thermal conductivity of the Lu0.1Bi1.9Te3−xSex is greatly reduced due to the introduced point defects and atomic mass fluctuation. Finally, the Lu0.1Bi1.9Te2.7Se0.3 sample obtained a maximum ZT value of 0.85 at 420 K. This study provides a low-cost and simple low-temperature method to mass production of Se&Lu-codoped Bi2Te3 with high thermoelectric performance for practical applications.

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“…As known, the p‐type (Bi, Sb) 2 Te 3 has been reported with an extraordinary peak zT ≈ 1.86 at 320 K, [ 41 ] while the n‐type Se‐Bi 2 Te 3 exhibits a much lower peak zT < 1.2. The addition of Ag, Cu, Co, S, In, and so on boosts the TE performance of n‐type Bi 2 Te 3 ( Table 1 [ 44–68 ] ). Furthermore, the modification of synthesis routes, including the solvothermal, [ 44 ] Bridgman growth, [ 45 ] zone melting (ZM), [ 46 ] spark plasma sintering (SPS), [ 47 ] hot pressing (HP), [ 48 ] melt‐centrifugation (MC), [ 41,49 ] and so on, also influences the resultant transport properties.…”

Section: Revisiting the State‐of‐the‐art Te Alloys Via Phase Diagram Engineeringmentioning

confidence: 99%

Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review

Deng

Yen

Tsai

et al. 2021

Adv Energy and Sustain Res

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Alongside the evolution of technology timeline, environmental protection and energy sustainability significantly guide the research feast toward the high-performance green energy resources and technologies. [1,2] Alternatives to the fossil fuels that emit harmful greenhouse gases become desired, in which the thermoelectric (TE) materials have played an inevitable role since the 1960s. [3] One of TE technology features is the waste heat recovery via the Seebeck effect, [4] which allows the conversion between thermal energy and electricity. Such a TE generator produces precious electrical energy from any arbitrary interfaces where a temperature gradient exists, simultaneously boosting energy usage efficiency while eases global warming.Many TE materials are being explored for power generation applications, such as GeTe, [5] PbTe, [6,7] Bi 2 Te 3 , [8] and silicides. [9] Moreover, the TE cooler, which utilizes the Peltier effect, [4] emerges as a vital spot-cooling device assembled by all-solid-state materials. With the advantages of refrigerant-free and size-minimization, the TE cooler exhibits the advantages of refrigerant-free and size-minimization, which can be used as the next-generation cooling technology. [10] After more than 60 years of development, the practical application and potential coverage of TE technology are comprehensive. Nevertheless, a TE material's thermal-to-electric efficiency is still required to be boosted. In general, the TE figure-of-merit zT ¼ ðS 2 σÞT=κ positively relates to the performance of TE materials, in which the S is the Seebeck coefficient, σ ¼ ρ À1 refers to the electrical conductivity, and κ ¼ κ e þ κ L þ κ b comprises the total thermal conductivity κ, lattice thermal conductivity κ, and bipolar thermal conductivity κ b , respectively. Most importantly, the S, σ, and κ e have the carrier concentration n H as a common factor, which correlates and depends on each other. Therefore, the counterbalance between the thermal and electrical transport properties is essential to attain high zT values, which could be fulfilled by band structure engineering, [11] carrier optimization, [12,13] filtering effect, [14] , and so on. In parallel, the reduction in κ L also paves the way toward highperformance TE materials, mainly accomplished by all-scale defect engineering [15] and alloying effect. [16] Those imperfections introduce multiscale roadblocks, such as the interstitial/ antisite defect, dislocations, nanoprecipitates, and grain boundaries, aiming to impede the phonons with different wavelengths.Countless efforts bring the breakthroughs of zT value in succession. The peak zT grows less than unity in the 1960s to greater than 2.5 after 2015, [17] whose progress is slow yet steadily. Complex TE materials with various dopants are the primary targets, while different approaches can be adopted. [18,19] The

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Thermoelectric properties of Lu-doped n-type Lu Bi2-Te2.7Se0.3 alloys

Cited by 25 publications

References 21 publications

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Enhanced thermoelectric properties of hydrothermally synthesized n-type Se&Lu-codoped Bi2Te3

Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review

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Thermoelectric properties of Lu-doped n-type Lu Bi2-Te2.7Se0.3 alloys

Cited by 25 publications

References 21 publications

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties

Enhanced thermoelectric properties of hydrothermally synthesized n-type Se&Lu-codoped Bi2Te3

Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review

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Product

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Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi₂Te₃ Material for Enhanced Thermoelectric Properties