The
semiconductor Cu2ZnSnSe4 (CZTSe) is a
promising candidate for both thermoelectric and photovoltaic energy
harvesting applications due to a combination of features such as direct
band gap, high absorption coefficient, and low thermal conductivity.
We report the solid-state synthesis and characterization of Mn-doped
Cu2Zn1–x
Mn
x
SnSe4 (x = 0, 0.05, 0.10,
and 0.15) in an attempt to explore the effect of isovalent substitution
at the Zn site. X-ray diffraction and Raman spectroscopy of all specimens
confirmed the formation of a single-phase tetragonal kesterite structure
(space group I4̅). The band gap obtained by
UV–visible diffuse reflectance measurements was 1.42 eV for
all compositions. Thermoelectric properties were measured in the range
300–785 K. Electrical resistivity was metallic and reduced
on Mn doping, while the Seebeck coefficient exhibited a p-type semiconducting
behavior that enhanced on Mn doping, with associated enhancement of
the power factor. Lattice thermal conductivity showed a 1/T behavior, falling from about 1.9–2.7 W m–1 K–1 at 300 K to 0.51–0.9 W m–1 K–1 above 750 K. The combined effect of enhanced
power factor and reduced lattice thermal conductivity resulted in
a figure of merit ZT in the range of 0.19–0.42
above 750 K. Thin-film photovoltaic devices with a CZTSe absorber
and an SnSe electron transport layer gave 3.2% efficiency.