Thermoelectric Properties of Hot-Pressed Materials Based on Mg2Si n Sn1−n

Influence of power factor enhancement on the thermoelectric figure of merit in Mg2Si0.4Sn0.6 based materials

“…The ZT values for the different Mg 2 (Si,Sn) specimens are comparable with that reported in literature . It is observed that compared to the doped Mg 2 Si, the ZT values for the solid solutions are almost doubled.…”

“…Ternary compounds with composition within the Mg 2 Si–Mg 2 Sn solid solution are potential candidates for n‐type legs in thermogenerator modules for intermediate temperatures (650–750 K). This is due to the high thermoelectric figure of merit ( ZT ) (greater than unity) coupled with the commercial viability (low cost of raw materials, non‐toxicity) of these materials .…”

Local structure and thermoelectric properties of Mg2Si0.977−Ge Bi0.023 (0.1 ⩽x⩽ 0.4)

“…Introducing germanium into the silicon position reduces the thermal conductivity especially at low temperatures, due to the increase in phonon scattering through mass fluctuation point defect scattering between these two elements [38,39] as well as the presence of Ge-rich domains. The decrease in j with increasing mass contrast was also observed in other solid solutions such as PbTe 1Àx Se x [40] and Mg 2 Si 1Àx Sn x [41,42].…”

Nanostructure and doping stimulated phase separation in high-ZT Mg2Si0.55Sn0.4Ge0.05 compounds

“…Many decades after the pioneer work of Nikitin et al [14,15], Mg 2 Si and Mg 2 Sn are known to form solid solutions of Mg 2 Si 1Àx Sn x , while there is a miscibility gap in the range 0.4 < x < 0.6 [12][13][14]16]. Few papers in the literature report the synthesis of solid solutions of Mg 2 Si 1Àx Sn x for the Si-rich members: namely, in the range well below the miscibility gap x < 0.4 [12,13,[17][18][19]. This lack of interest is attributed mostly to the relatively low ZT value, which in turn does not exceed 0.85 at temperatures $800 K, despite the doping by La and Sb.…”