2011
DOI: 10.1016/j.phpro.2011.01.039
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Thermoelectric properties of group VI metal silicide semiconductors

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Cited by 23 publications
(18 citation statements)
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“…It is reported that the low temperature phase, h-MoSi 2 , is expected to be one of the novel silicide semiconductors, which has improved thermoelectric properties. 6 On the other hand, the Mg 2 Si and MgO composites are considered as a potential thermoelectric material. Both heterogeneous and homogeneous nanostructured composites have been proposed to increase the ZT by scattering phonons more than electrons.…”
Section: Syntheses Of Nanostructure Bundlesmentioning
confidence: 99%
See 1 more Smart Citation
“…It is reported that the low temperature phase, h-MoSi 2 , is expected to be one of the novel silicide semiconductors, which has improved thermoelectric properties. 6 On the other hand, the Mg 2 Si and MgO composites are considered as a potential thermoelectric material. Both heterogeneous and homogeneous nanostructured composites have been proposed to increase the ZT by scattering phonons more than electrons.…”
Section: Syntheses Of Nanostructure Bundlesmentioning
confidence: 99%
“…Recently, a variety of metal silicides, for example, β-FeSi 2 , Mg 2 Si, MnSi 1:7 , hexagonal MoSi 2 and CrSi 2 , have been successfully grown by various growth techniques. [3][4][5][6][7] However, few metal silicide has been applied for the practical use, which is attributed to the modest figure of merit (ZT) of the metal silicides.…”
mentioning
confidence: 99%
“…The electronic structures and thermoelectric properties of the h-MoSi 2 and h-WSi 2 , as well as the CrSi 2 bulk crystals, have been investigated using the first-principles total-energy calculation program in pseudopotential schemes with plane-wave basis functions. The calculation shows that h-MoSi 2 and hWSi 2 have improved thermoelectric properties [3]. However, the electrical property of the bulk crystal h-MoSi 2 and h-WSi 2 has not been experimentally clarified.…”
Section: Introductionmentioning
confidence: 97%
“…Their relatively low electric resistivity and good compatibility with silicon substrates make them eminently suitable candidate materials for contacts or interconnects in electronic applications [7][8][9][10][11][12]. Among metal silicides the vanadium silicide system with different phases [13] has been found to be of increasing interest because one of the silicide phases namely V 3 Si (A-15 structure) exhibits high temperature superconductivity [14] while another phase, VSi 2 , shows an interesting combination of refractory properties and good electrical conductivity [15].…”
Section: Introductionmentioning
confidence: 99%