Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium

Zou, Minmin; Li, Jing‐Feng; Kita, Taizo

doi:10.1016/j.jssc.2012.09.043

Cited by 46 publications

(30 citation statements)

References 31 publications

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“…[ 13,14 ] Therefore, the previous work on n-type Fe M Sb is focused on the reduction of lattice thermal conductivity by alloying [ 14 ] or nano-structuring, [ 15,16 ] which only leads to a marginal improvement in TE performance with a maximum zT of 0.33. [ 18 ] Electronic band calculation shows the conduction band minimum (CBM) of Fe M Sb and ZrNiSn is located at X point of the Brillouin zone with band degeneracy N v = 3. [ 18 ] Electronic band calculation shows the conduction band minimum (CBM) of Fe M Sb and ZrNiSn is located at X point of the Brillouin zone with band degeneracy N v = 3.…”

Section: Doi: 101002/aenm201400600mentioning

confidence: 99%

High Band Degeneracy Contributes to High Thermoelectric Performance in p‐Type Half‐Heusler Compounds

Zhu

Pei

et al. 2014

Advanced Energy Materials

288

193

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Half‐Heusler (HH) compounds are important high temperature thermoelectric (TE) materials and have attracted considerable attention in the recent years. High figure of merit zT values of 0.8 to 1.0 have been obtained in n‐type ZrNiSn‐based HH compounds. However, developing high performance p‐type HH compounds are still a big challenge. Here, it is shown that a new p‐type HH alloy with a high band degeneracy of 8, Ti‐doped FeV0.6Nb0.4Sb, can achieve a high zT of 0.8, which is one of the highest reported values in the p‐type HH compounds. Although the band effective mass of this system is found to be high, which may lead to a low mobility, its low deformation potential and low alloy scattering potential both contribute to a reasonably high mobility. The enhanced phonon scattering by alloying leads to a reduced lattice thermal conductivity. The achieved high zT demonstrates that the p‐type Ti doped FeV0.6Nb0.4Sb HH alloys are promising as TE materials and offer an excellent TE performance match with n‐type ones for high temperature power generation.

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Section: Doi: 101002/aenm201400600mentioning

confidence: 99%

High Band Degeneracy Contributes to High Thermoelectric Performance in p‐Type Half‐Heusler Compounds

Zhu

Pei

et al. 2014

Advanced Energy Materials

288

193

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“…This is different from the composition-dependent p-n transition as often observed in thermoelectric materials. 21,22 The p-type conductivity in PbSe is acceptable if considering following possibilities: (a) existence of Pb vacancies and holes due to deficient Pb atoms from elemental loss of Pb during the MA and SPS processes and (b) easier oxidization of Pb during the processing, providing O atoms as acceptors in PbSe. 23 Nevertheless, even for both cases, the p-n transition was not due to the Se loss during high-temperature measurements, since the same p-n transition was confirmed by cycle tests.…”

Section: 15mentioning

confidence: 99%

Enhancing average ZT in pristine PbSe by over-stoichiometric Pb addition

Wei

2016

APL Materials

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“…In addition, the high cost of Ge slows its large scale commercial application. In recent years, half‐Heusler compounds, such as M NiSn, M CoSb ( M = Ti, Zr, Hf) and Fe R Sb ( R = V, Nb), have gained popularity as promising high temperature TE materials due to the excellent electrical properties, good mechanical robustness and thermal stability . A high zT of ≈1.0 near 1000 K has been achieved for both n‐type and p‐type HH compounds ( Figure 2 ), which highlights the possibility of its application in high temperature power generation.…”

Section: Introductionmentioning

confidence: 99%

High Efficiency Half‐Heusler Thermoelectric Materials for Energy Harvesting

Zhu

Xie

et al. 2015

Advanced Energy Materials

428

261

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respectively the temperature of the hot side and cold side, Δ T = T H -T C and T avg are the temperature gradient and average between hot and cold sides. [ 4 ] The fi gure of merit zT is defi ned as zT = α 2 σT /( κ e + κ L ), where α , σ , T , κ e and κ L are respectively the Seebeck coeffi cient, the electrical conductivity, the absolute temperature, and the electrical and lattice components of total thermal conductivity κ . [ 2 ] High conversion effi ciency of 15%-20% is thought of as the "Holy Grail" for large scale application of TE technologies. [ 5 ] As depicted in Figure 1 , this conversion efficiency can be realized by using middle temperature (500-900 K) TE materials with very high zT or high temperature (>900 K) TE materials with compromised zT . Recently, much progress has been made in developing high effi ciency middle temperature TE materials: high zT 's of ≈1.5 at 750 K for n-type and ≈2.0 at for p-type have been achieved in PbTe-based alloys, [6][7][8][9] while n-type and p-type fi lled skutterudites have the maximum zT 's of ≈1.7 and ≈1.0, respectively, near 800 K. [ 10,11 ] Some other TE materials made of earth-abundant and non-toxic elements have also been identifi ed, such as single crystal SnSe ( zT ≈ 2.6 at 923 K), [ 12 ] silicides [ 13,14 ] and α -MgAgSb. [ 15 ] However, there remain tremendous challenges for most of these TE materials for large scale commercial application, mainly due to their relatively poor thermal stability and weak mechanical strength at high temperatures. In Half-Heusler (HH) compounds have gained ever-increasing popularity as promising high temperature thermoelectric materials. High fi gure of merit zT of ≈1.0 above 1000 K has recently been realized for both n-type and p-type HH compounds, demonstrating the realistic prospect of these high temperature compounds for high effi ciency power generation. Here, recent progress in advanced fabrication techniques and the intrinsic atomic disorders in HH compounds, which are linked to the understanding of the electrical transport, is discussed. Thermoelectric transport features of n-type ZrNiSn-based HH alloys are particularly emphasized, which is benefi cial to further improving thermoelectric performance and comprehensively understanding the underlying mechanisms in HH thermoelectric materials. The rational design and realization of new high performance p-type Fe(V,Nb)Sb-based HH compounds are also demonstrated. The outlook for future research directions of HH thermoelectric materials is also discussed.

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Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium

Cited by 46 publications

References 31 publications

High Band Degeneracy Contributes to High Thermoelectric Performance in p‐Type Half‐Heusler Compounds

High Band Degeneracy Contributes to High Thermoelectric Performance in p‐Type Half‐Heusler Compounds

Enhancing average ZT in pristine PbSe by over-stoichiometric Pb addition

High Efficiency Half‐Heusler Thermoelectric Materials for Energy Harvesting

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