Thermoelectric properties of ductile Ag2S0.7Te0.3 prepared via zone melting method

Jin, Min; Guo, Linlin; Lu, Xinyu; He, Feng; Xudong, Bai; Li, Rongbin; Lin, Siqi

doi:10.1016/j.ssc.2023.115123

Cited by 6 publications

(8 citation statements)

References 20 publications

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“…Besides, our comprehensive nano/microstructural characterizations confirm that the introduction of Ag 2 Te can induce Ag‐poor amorphous phase boundaries with multi‐scale phonon scattering sources, which can significantly suppress κ l , as illustrated in Figure 1d. Finally, we achieve a peak ZT of ≈0.43 at 323 K for Ag 2 S 0.5 Se 0.5 + 0.5 mol.% Ag 2 Te composite, which is comparable with the record ZT values of n‐type ductile semiconductors, [ 37,49–52,55,57–61 ] as shown in Figure 1e. More importantly, the maximum bending strain of our fabricated composites above 30% without cracks, which is comparable to the highest values among the reported Ag 2 S‐based ductile semiconductors, [ 8,37,51,52,55,57,61 ] as shown in Figure 1f.…”

Section: Introductionsupporting

confidence: 82%

“…Ag 2 S and Ag 2 Te belong to monoclinic phases, and Ag 2 Se belongs to orthorhombic phase. Figure 2a shows the [37,[49][50][51][52]55,[57][58][59][60][61] f) Summary of the maximum bending strain of representative ductile semiconductors. [8,37,51,52,55,57,61] crystal structures of Ag 2 S 0.5 Se 0.5 and Ag 2 Te, in which Ag 2 S 0.5 Se 0.5 exhibits a similar crystal structure as monoclinic Ag 2 S with a space group of P2 1 /n.…”

Section: Resultsmentioning

confidence: 99%

“…Besides, the maximum room-temperature ZT value of Ag 2 S 0.5 Se 0.5 + 0.5 mol.% Ag 2 Te composite can be up to ≈0.39, which is among the top-notch reported n-type ductile semiconductors mentioned above. [37,[49][50][51][52]55,[57][58][59][60][61] To test the stability of the composite, we measured the thermoelectric performance of Ag 2 S 0.5 Se 0.5 + 0.5 mol.% Ag 2 Te composite in different batches and under different heating circles, as shown in Figures S7-S8 (Supporting Information). The electrical transport properties, thermal transport properties, and ZT values exhibited great stability with small differences under measured uncer-tainty.…”

Section: Resultsmentioning

confidence: 99%

“…d) Schematic diagram of microstructure of 0.5 mol.% Ag 2 Te-alloyed Ag 2 S 0.5 Se 0.5 . e) Summary of room-temperature ZT values of n-type ductile semiconductors [37,[49][50][51][52]55,[57][58][59][60][61]. f) Summary of the maximum bending strain of representative ductile semiconductors [8,37,51,52,55,57,61].…”

mentioning

confidence: 99%

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Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

Wu,

Shi,

Mao

et al. 2023

Advanced Energy Materials

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Inorganic semiconductor Ag2S with excellent plasticity is highly desired in flexible and wearable thermoelectrics. However, the compromise between plasticity and thermoelectric performance limits the advances in Ag2S‐based thermoelectric materials and their devices. Here, a 0.5 mol.% Ag2Te‐alloyed Ag2S0.5Se0.5 bulk material is designed, which has a competitively high near‐room‐temperature figure of merit of ≈0.43 at 323 K and an ultra‐high bending strain of ≈32.5% without cracks. Introducing Ag2Te can optimize the carrier concentration and mobility of the Ag2S0.5Se0.5 matrix due to its metal‐like conducting features, leading to a maximum power factor of ≈6 µW cm−1 K−2. Simultaneously, Ag2Te induces Ag‐poor amorphous phase boundaries, serving as buffer layers to enhance the overall plasticity. Moreover, such amorphous phase boundaries combined with multiscale phonon scattering sources can significantly suppress the lattice thermal conductivity to ≈0.28 W m−1 K−1 at 323 K, leading to a high figure of merit. This study demonstrates an innovative route to simultaneously boost the thermoelectric performance and plasticity of ductile semiconductors.

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Section: Introductionsupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

Wu,

Shi,

Mao

et al. 2023

Advanced Energy Materials

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“…Our previous report has demonstrated that the Ag 2 S x Te 1– x samples with high S content ( x ≥ 0.4) show superior ductility, with bending strain exceeding 15% and compressive strain over 40% . In the composition range of x = 0.4–0.8, the higher the S concentration, the larger the ratio of the crystalline phase/amorphous phase in the samples, making it easier to modify the TE properties. − In this work, we demonstrate that the TE properties of Ag 2 S x Te 1– x ( x = 0.55–0.75) samples can be tuned by altering the S/Te ratio. The power factor (PF, PF = S 2 σ) of the Ag 2 S 0.55 Te 0.45 sample is as high as 4.9 μW cm –1 K –2 at 300 K, and the single parabolic band (SPB) model predicts that the PF can be further enhanced by lowering the carrier concentration.…”

Section: Introductionsupporting

confidence: 52%

Flexible Ag–S–Te System with Promising Room-Temperature Thermoelectric Performance

Zhang

Luo

et al. 2023

ACS Appl. Mater. Interfaces

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Silver chalcogenides demonstrate great potential as flexible thermoelectric materials due to their excellent ductility and tunable electrical and thermal transport properties. In this work, we report that the amorphous/crystalline phase ratio and thermoelectric properties of the Ag2S x Te1–x (x = 0.55–0.75) samples can be modified by altering the S content. The room-temperature power factor of the Ag2S0.55Te0.45 sample is 4.9 μW cm–1 K–2, and a higher power factor can be achieved by decreasing the carrier concentration as predicted by the single parabolic band model. The addition of a small amount of excessive Te into Ag2S0.55Te0.45 (Ag2S0.55Te0.45+y ) not only enhances the power factor by decreasing the carrier concentration but also reduces the total thermal conductivity due to decreased electronic thermal conductivity. Owing to the effectively optimized carrier concentration, the thermoelectric power factor and dimensionless figure of merit zT of the sample with y = 0.007 reaches, respectively, 6.2 μW cm–1 K–2 and 0.39, while the excellent plastic deformability is well maintained, demonstrating its promising potential as a flexible thermoelectric material at room temperature.

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Advances in flexible inorganic thermoelectrics

Shi,

Cao,

Chen

et al. 2023

EcoEnergy

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Solid‐state bismuth telluride‐based thermoelectric devices enable the generation of electricity from temperature differences and have been commercially applied in various fields. However, in many scenarios, the surface of the heat source is not flat. Therefore, it is crucial to develop flexible thermoelectric materials and devices to efficiently utilize heat sources and expand their applications. Compared with organic thermoelectric materials and devices, inorganic flexible thermoelectric materials and devices have much higher thermoelectric performance and stability. Considering the rapid development in this research field, we carefully summarize the design principles, structures, and thermoelectric properties of inorganic flexible materials and their devices reported in the recent 3 years, including sulfides, selenides, tellurides, and composite materials designed based on these inorganics. The structural designs of flexible thermoelectric devices based on micro‐sized bulk materials are also carefully summarized. Additionally, we overview the mechanical stability and methods for reducing internal resistance for designs of inorganic flexible thermoelectric devices. In the end, we provide outlooks on future research directions for inorganic flexible thermoelectric materials and devices. This review will help guide thermoelectric researchers, beginners, and students.

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Thermoelectric properties of ductile Ag2S0.7Te0.3 prepared via zone melting method

Cited by 6 publications

References 20 publications

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

Flexible Ag–S–Te System with Promising Room-Temperature Thermoelectric Performance

Advances in flexible inorganic thermoelectrics

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Thermoelectric properties of ductile Ag2S0.7Te0.3 prepared via zone melting method

Cited by 6 publications

References 20 publications

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual‐Phase Engineering

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual‐Phase Engineering

Flexible Ag–S–Te System with Promising Room-Temperature Thermoelectric Performance

Advances in flexible inorganic thermoelectrics

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Product

Resources

About

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering

Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag₂S_0.5Se_0.5 Via Dual‐Phase Engineering