2006
DOI: 10.1016/j.scriptamat.2006.04.012
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Thermoelectric properties of Cu-doped p-type pseudo-binary CuxBi0.5Sb1.5−xTe3 (x=0.05–0.4) alloys prepared by spark plasma sintering

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Cited by 43 publications
(17 citation statements)
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“…Furthermore, the doping of Cu increases the hole concentration, which effectively suppresses the bipolar effect and shis the intrinsic excitation temperature to higher temperature. It is worth to note that the s values of the Cu-doped samples prepared via a facile hydrothermal method in our work could be comparable to that of Bi-Sb-Te alloys synthesized by conventional sintering methods, 30,39 indicating this facile hydrothermal method is an effective route for developing highperformance (Bi,Sb) 2 Te 3 -based materials.…”
Section: Methodssupporting
confidence: 60%
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“…Furthermore, the doping of Cu increases the hole concentration, which effectively suppresses the bipolar effect and shis the intrinsic excitation temperature to higher temperature. It is worth to note that the s values of the Cu-doped samples prepared via a facile hydrothermal method in our work could be comparable to that of Bi-Sb-Te alloys synthesized by conventional sintering methods, 30,39 indicating this facile hydrothermal method is an effective route for developing highperformance (Bi,Sb) 2 Te 3 -based materials.…”
Section: Methodssupporting
confidence: 60%
“…and 22% reduction than those of Cu-doped Bi-Sb-Te samples reported by Lee et al, 17 Hao et al 38 and Cui et al, 30 respectively. The low thermal conductivity of sample S2 can be ascribed to , and the presence of second phase.…”
Section: Methodsmentioning
confidence: 71%
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“…Ag as a substituent at the Bi site can increase the hole carrier concentration. Cui et al [7][8][9][10][11] studied the TE properties of Ag-doped p-type Ag x Bi 0.5 Sb 1.5Àx Te 3 alloys, and found that Ag doping can reduce the lattice thermal conductivity, enhance the transport performance, and increase the dimensionless figure of merit ZT to 1.1. At the same time, Ag can provide electrons to the conduction band, which leads to donor doping due to ionization, thereby forming an n-type semiconductor.…”
Section: Introductionmentioning
confidence: 99%
“…It has a long working life (over 20 years) in a wide temperature range with highly stable performance. Many studies [1][2][3][4][5][6][7][8] have been done to improve ZT value of the thermoelectric materials in recent years.…”
Section: Introductionmentioning
confidence: 99%