2001
DOI: 10.1016/s0925-8388(00)01275-5
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Thermoelectric properties of CoSb3

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Cited by 223 publications
(175 citation statements)
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“…This is in contrast to typical semiconductors, such as silicon, and leads to a p-type intrinsic semiconductor with a very low level of n-doping. The change of the major charge-carrier type, starting with n-type and showing a transition to p-type at 460 K agrees with earlier reports by Kawaharada et al [5] Figure 6 shows that the electrical conductivity, a, decreases with increasing temperature for all samples except for the reference. [27] The nanostructured materials studied here are all heavily doped p-type semiconductors, as can be seen by the low Seebeck coefficients and reasonably high electrical conductivities considering the grain size.…”
Section: Full Papersupporting
confidence: 90%
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“…This is in contrast to typical semiconductors, such as silicon, and leads to a p-type intrinsic semiconductor with a very low level of n-doping. The change of the major charge-carrier type, starting with n-type and showing a transition to p-type at 460 K agrees with earlier reports by Kawaharada et al [5] Figure 6 shows that the electrical conductivity, a, decreases with increasing temperature for all samples except for the reference. [27] The nanostructured materials studied here are all heavily doped p-type semiconductors, as can be seen by the low Seebeck coefficients and reasonably high electrical conductivities considering the grain size.…”
Section: Full Papersupporting
confidence: 90%
“…[21] Samples having smaller particle size have much lower k values, where k increases with increasing particle size. The sample HT1, with smallest particle size, has a thermal conductivity of 1.5 W m ±1 K ±1 at 320 K, which is about one order of magnitude lower than the value reported by Kawaharada et al [5] …”
Section: Full Papercontrasting
confidence: 53%
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“…2(a), the MD predicted L ð$1:0 W=m-KÞ and the two-phase scattering model show a minimum near x ¼ 0:38, and this minimum is close to min , predicted for the amorphous-phase L . Figure 2(b) shows the predicted L for x ¼ 0, 0.25, 0.33, and 0.5, as a function of temperature, along with the experimental results [32]. The transition temperatures (T and T ) of two ordered phases are marked in Fig.…”
mentioning
confidence: 81%
“…The performance of TE materials is generally characterized by the dimensionless figure-of-merit [4,5]:…”
Section: Introductionmentioning
confidence: 99%