Thermoelectric properties of Bi2Te3-Sb2Te3-Sb2Se3 pseudo-ternary alloys in the temperature range 77 to 300� K

Yim, Woosoon; Fitzke, E. V.; Rosi, F.D.

doi:10.1007/bf00549720

Cited by 104 publications

(54 citation statements)

References 22 publications

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“…The increase of m H with increasing x (a reduced Bi/Sb ratio) is mainly attributed to weakened alloy scattering, which is consistent with previous studies. 24,45 In addition, the HD samples show much higher m H values than the HP samples by virtue of their lower n H and slightly enhanced textures. 22,23,46,47 Nevertheless, the measured m H values of the HD samples are still smaller than the m H for the single crystals 43 and MA-HP 48 samples of the same composition.…”

Section: Effects Of Sb Content and Hd On Te Propertiesmentioning

confidence: 99%

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

et al. 2014

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The abundance of low-temperature waste heat produced by industry and automobile exhaust necessitates the development of power generation with thermoelectric (TE) materials. Commercially available bismuth telluride-based alloys are generally used near room temperature. Materials that are composed of p-type bismuth telluride, which are suitable for low-temperature power generation (near 380 K), were successfully obtained through Sb-alloying, which suppresses detrimental intrinsic conduction at elevated temperatures by increasing hole concentrations and material band gaps. Furthermore, hot deformation (HD)-induced multi-scale microstructures were successfully realized in the high-performance p-type TE materials. Enhanced textures and donor-like effects all contributed to improved electrical transport properties. Multiple phonon scattering centers, including local nanostructures induced by dynamic recrystallization and high-density lattice defects, significantly reduced the lattice thermal conductivity. These combined effects resulted in observable improvement of ZT over the entire temperature range, with all TE parameters measured along the in-plane direction. The maximum ZT of 1.3 for the hot-deformed Bi 0.3 Sb 1.7 Te 3 alloy was reached at 380 K, whereas the average ZT av of 1.18 was found in the range of 300-480 K, indicating potential for application in low-temperature TE power generation. Keywords: bismuth telluride; donor-like effect; hot deformation; low-temperature power generation; texture INTRODUCTION Thermoelectric (TE) devices have attracted extensive interest over the past few decades because of their potential use in direct thermal-toelectrical energy conversion and solid-state refrigeration. The TE conversion efficiency of a material can be gauged by the dimensionless figure of merit ZT ¼ a 2 sT/k, where a, s, k and T are the Seebeck coefficient, the electrical conductivity, the thermal conductivity and the operating temperature, respectively. 1 Continuous effort has been invested toward improving the ZT values of TE materials, resulting in significant advances through phonon engineering 2-9 and band engineering. [10][11][12][13][14] For example, remarkable increases in ZT have been achieved in bulk nanomaterials via the enhancement of phonon scattering at boundaries to reduce lattice thermal conductivities. 2,4,6,7 Currently, the best commercial TE materials near room temperature are still rhombohedral bismuth tellurides and related solid solutions fabricated by unidirectional crystal growth. [15][16][17] Nanostructuring strategies have been devised to prepare highperformance bismuth telluride-based alloys, including bottom-up

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Section: Effects Of Sb Content and Hd On Te Propertiesmentioning

confidence: 99%

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

et al. 2014

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“…On the other hand, the value of ZT was limited to ∼0.1, due to relatively high κ. A typical strategy for decreasing the lattice thermal conductivity is alloying, 36 which has been successfully demonstrated in Bi 2 Te 3 , 37 Si-Ge, 38 Mg 2 Si, 39 amongst others. However, alloying also decreases the carrier mobility.…”

Section: -6mentioning

confidence: 99%

Electrical/thermal transport and electronic structure of the binary cobalt pnictides CoPn2 (Pn = As and Sb)

et al. 2015

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We demonstrate the electrical and thermal transport properties of polycrystalline CoPn2 (Pn = As and Sb) between 300 and 900 K. CoAs2 shows semiconducting electrical transport up to 900 K, while CoSb2 exhibits degenerate conduction. Sign inversion of the Seebeck coefficient is observed at ∼310 and ∼400 K for CoAs2 and CoSb2, respectively. Thermal conductivity at 300 K is 11.7 Wm−1K−1 for CoAs2 and 9.4 Wm−1K−1 for CoSb2. The thermoelectric power factor of CoAs2 is ∼10 μWcm−1K−2, although the dimensionless figure of merit is limited to ∼0.1 due to relatively high thermal conductivity. Using electronic structure calculations, the band gap value is calculated to be 0.55 eV for CoAs2 and 0.26 eV for CoSb2.

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“…Using several techniques [5][6][7][8][9], Sb 2 Te 3 films were grown on various substrates such as SiO 2 [5], mica [10] or polymide [11][12][13][14][15]. p-type samples have been reported to contain a telluriumrich second phase whose effect on the thermoelectric properties is deleterious as reported by Airapetiants [16], Tiller [17], and also by W.Yim et al [18]. The aim of the present work is to study the structural, thermoelectric properties and Hall effect studies on thermally evaporated (Sb 2 Te 3 ) 70 (Bi 2 Te 3 ) .30 thin films Experimental (Sb 2 Te 3 ) 70 (Bi 2 Te 3 ) .30 alloy was prepared by taking antimony telluride and bismuth telluride (99.999% Aldrich Chemicals, USA) in respective atomic percentages in a quartz ampoule.…”

Section: Introductionmentioning

confidence: 95%

Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films

Rajasekar¹,

Kungumadevi²,

Subbarayan³

et al. 2007

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Thin films of Sb 2 Te 3 and (Sb 2 Te 3 ) 70 (Bi 2 Te 3 ) 30 alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2× 10 −6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb 2 Te 3 ) 70 (Bi 2 Te 3 ) 30 and (Sb 2 Te 3 ) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.

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Thermoelectric properties of Bi2Te3-Sb2Te3-Sb2Se3 pseudo-ternary alloys in the temperature range 77 to 300� K

Cited by 104 publications

References 22 publications

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

Electrical/thermal transport and electronic structure of the binary cobalt pnictides CoPn2 (Pn = As and Sb)

Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films

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