Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition

Manzano, Cristina V.; Rojas, Adriana A.; Decepida, Michelle; Mayor, Begoña Abad; Feliz, Yazmin; Caballero‐Calero, Olga; Borca-Tasciuc, Diana-Andra; Martín‐González, Marisol

doi:10.1007/s10008-013-2066-7

Cited by 46 publications

(47 citation statements)

References 20 publications

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“…The absolute value of the Seebeck coefficient is close to values obtained for coatings deposited from aqueous bath [17]. The electrical resistivity measured is 133 µΩ m, a higher value than what is commonly obtained for coatings synthesized from aqueous electrolytes (around 10 µΩ m [16,17,46,47] A c c e p t e d M a n u s c r i p t 13 impurities…). Moreover it should be noted that the used lift-off method required for the transport properties measurements could have damaged the electroplated films during the release process by introducing cracks or other defects that increase the electrical resistivity, as suggested by Rostek et al [48].…”

Section: Anodic Signalssupporting

confidence: 61%

Electrodeposition of stoichiometric bismuth telluride Bi2Te3 using a piperidinium ionic liquid binary mixture

Szymczak

Legeai

Michel

et al. 2014

Electrochimica Acta

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Section: Anodic Signalssupporting

confidence: 61%

Electrodeposition of stoichiometric bismuth telluride Bi2Te3 using a piperidinium ionic liquid binary mixture

Szymczak

Legeai

Michel

et al. 2014

Electrochimica Acta

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“…Some researchers took the pulsed deposition method to control precisely for the thin film structure and most thin films prepared also show the (110) orientation. [13][14][15] z E-mail: zgzeng@shu.edu.cn; zhiyuhu@shu.edu.cn However, due to the common use of metallic substrates, there exists a lattice mismatch between the substrate and film which have an effect on the growth of the thin film. The measurement of thermoelectric properties is also complicated for short-circuiting any voltage along the substrate.…”

mentioning

confidence: 99%

Electrodeposition and Thermoelectric Characterization of (00L)-Oriented Bi₂Te₃Thin Films on Silicon with Seed Layer

Cao

Zeng

Liu

et al. 2013

J. Electrochem. Soc.

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Bi 2 Te 3 thin films were electrodeposited on silicon substrate with a epitaxial seed layer from acidic aqueous solutions at room temperature. The seed layer optimized the charge transfer in the electrodeposition process and reduced the lattice mismatch between the thin film and the substrate, leading to the Bi 2 Te 3 thin films with uniform structure and highly crystallographically texture. By changing the substrate from doped to intrinsic silicon, we obtained the Bi 2 Te 3 thin films with (00L) preferential orientation which is different from previously reported (015) or (110)-oriented thin films prepared by ECD. The (00L)-oriented thin film showed a more compact structure with lower roughness and an improved thermoelectric performance. The electrical conductivity increased by about 72% compared with the (110)-oriented thin film in our system. Simultaneously, the Seebeck coefficient was comparable, indicating the improvement of power factors by ∼45%. We also altered the thickness of the seed layer from 40 nm to 20 nm and found that both the electrical conductivity and Seebeck coefficient decreased due to the insufficient charge transfer in the electrodeposition process.

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“…The solution was prepared from Sigma Aldrich® bismuth pieces (99.999%), Sigma Aldrich® (99.99%) tellurium powder, and Panreac® 65% nitric acid. In order to obtain nanowires oriented along the [1 1 0] direction, the reduction potential was varied following a method similar to that used by Manzano et al [16,33]for films. To obtain uniform growth and high aspect ratios in the nanowires, the pulse conditions were studied.…”

Section: Methodsmentioning

confidence: 99%

“…This process influences the crystallographic quality of the deposit and the properties of the semiconducting material obtained. This process has been studied before in our group for films [16], 1D nanowire arrays [6,17,18] and 3D Bi 2 Te 3 networks [19].…”

Section: Introductionmentioning

confidence: 91%

Pulsed current-voltage electrodeposition of stoichiometric Bi₂Te₃ nanowires and their crystallographic characterization by transmission electron backscatter diffraction

Manzano

Polyakov

Maiz

et al. 2019

Science and Technology of Advanced Materials

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Bi2Te3 nanowires with diameters ranging from 25 to 270 nm, ultra-high aspect ratio, and uniform growth front were fabricated by electrodeposition, pulsing between zero current density during the off time and constant potential during the on time (pulsed-current-voltage method, p-IV). The use of zero current density during the off time is to ensure no electrodeposition is carried out and the system is totally relaxed. By this procedure, stoichiometric nanowires oriented perpendicular to the c-axis is obtained for the different diameters of porous alumina templates. In addition, the samples show a uniform growth front with ultra-high aspect ratio single crystal nanowires. The high degree of crystallinity was verified by transmission electron backscatter diffraction. This characterization revealed that the nanowires present both large single crystalline areas and areas with alternating twin configurations.

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Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition

Cited by 46 publications

References 20 publications

Electrodeposition of stoichiometric bismuth telluride Bi2Te3 using a piperidinium ionic liquid binary mixture

Electrodeposition of stoichiometric bismuth telluride Bi2Te3 using a piperidinium ionic liquid binary mixture

Electrodeposition and Thermoelectric Characterization of (00L)-Oriented Bi₂Te₃Thin Films on Silicon with Seed Layer

Pulsed current-voltage electrodeposition of stoichiometric Bi₂Te₃ nanowires and their crystallographic characterization by transmission electron backscatter diffraction

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Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition

Cited by 46 publications

References 20 publications

Electrodeposition of stoichiometric bismuth telluride Bi2Te3 using a piperidinium ionic liquid binary mixture

Electrodeposition of stoichiometric bismuth telluride Bi2Te3 using a piperidinium ionic liquid binary mixture

Electrodeposition and Thermoelectric Characterization of (00L)-Oriented Bi2Te3Thin Films on Silicon with Seed Layer

Pulsed current-voltage electrodeposition of stoichiometric Bi2Te3 nanowires and their crystallographic characterization by transmission electron backscatter diffraction

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Product

Resources

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Electrodeposition and Thermoelectric Characterization of (00L)-Oriented Bi₂Te₃Thin Films on Silicon with Seed Layer

Pulsed current-voltage electrodeposition of stoichiometric Bi₂Te₃ nanowires and their crystallographic characterization by transmission electron backscatter diffraction