Thermoelectric properties of Bi-doped Mg2Si semiconductors

Electrical properties of Mg₂Si thin films on flexible polyimide substrates fabricated by radio-frequency magnetron sputtering

“…Figure 3 shows the temperature dependence of µ, S, and thermoelectric power factor (PF= S 2 /µ) of the Mg 2 Si thin films deposited at RT on PI substrates in this study compared with the values for a polycrystalline bulk sample. 23) At near RT, the µ of the Mg 2 Si film on the PI substrate is nearly three orders of magnitude higher than that of the bulk sintered Mg 2 Si sample. The µ of the Mg 2 Si thin film on the PI substrate decreased with increasing temperature; however, the µ of the bulk sintered Mg 2 Si sample increased with temperature, reaching a maximum at 478 K, after which it decreased with further increase in temperature.…”

Mg2Sn heterostructures on Si(111) substrate

“…In the first time these silicides, stannides and their alloys [6][7][8] drew the attention as candidates of efficient thermoelectric materials due to their large Seebeck coefficient (), high electrical conductivity (), and low thermal conductivity (k). It is known that Mg2X compounds possess higher value of the power factor and thermoelectric figure of merit than GeSi alloys and -FeSi2 [9], so they are promising materials for production of high efficiency thermoelectric convertors.…”

“…Nonstoichiometry influences the conductivity type of these compounds. In Mg2Si this effect is not B results in n-type conductivity [16][17][18][19][20][21][22].…”

Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics

“…However for Mg 2 Si, Mg 2 Sn and Mg 2 Si x Sn 1-x ternary alloy this effect is not exactly determined. It is also known thatAg, Ga and Cu atoms act as donor impuritiesfor Mg 2 X (X=Si, Sn, Ge) compounds 8,9 . Recently it was found that in the nondoped Mg 2 Sn polycrystalline films grown by solid phase epitaxy from Sn-Mg multilayers on Si (111) n-type substrate has a complex conductivity and carrier mobility behavior, which is explained by change of hole conductivity at low temperature (100-230 K) on the electron conductivity at temperatures 250-420 K due to beginning of intrinsic conductivity in Mg 2 Sn film 10 .…”