Thermoelectric properties improvement in Mg2Sn thin films by structural modification

Safavi, Mahsasadat; Martin, Nicolas; Linseis, Vincent; Palmino, Frank; Cherioux, Frédéric; Billard, Alain; Yazdi, Mohammad Arab Pour

doi:10.1016/j.jallcom.2019.05.214

Cited by 12 publications

(15 citation statements)

References 30 publications

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“…In the present study, we focus on Mg 2 Sn with the same crystal structure as Mg 2 Si. Mg 2 Sn has been studied extensively as a potential TE material [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37] . Xin et al 31 reported that an Sb-doped n-type polycrystalline Mg 2 Sn, Mg 2.15 Sn 0.98 Sb 0.02 exhibited a zT value of 0.53 at 650 K (κ and PF are 4.7 W/mK and 3.9 W/mK 2 , respectively).…”

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confidence: 99%

Control of the Thermoelectric Properties of Mg2Sn Single Crystals via Point-Defect Engineering

Saito

Hayashi

Dong

et al. 2020

Sci Rep

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is a potential thermoelectric (te) material that can directly convert waste heat into electricity. in this study, Mg 2 Sn single-crystal ingots are prepared by melting under an Ar atmosphere. the prepared ingots contain Mg vacancies (V Mg) as point defects, which results in the formation of two regions: an Mg 2 Sn single-crystal region without V Mg (denoted as the single-crystal region) and a region containing V Mg (denoted as the V Mg region). the V Mg region is embedded in the matrix of the single-crystal region. the interface between the V Mg region and the single-crystal region is semi-coherent, which does not prevent electron carrier conduction but does increase phonon scattering. furthermore, electron carrier concentration depends on the fraction of V Mg , reflecting the acceptor characteristics of V Mg. The maximum figure of merit zT max of 1.4(1) × 10 −2 is realised for the Mg 2 Sn single-crystal ingot by introducing V Mg. these results demonstrate that the te properties of Mg 2 Sn can be optimised via pointdefect engineering.

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confidence: 99%

Control of the Thermoelectric Properties of Mg2Sn Single Crystals via Point-Defect Engineering

Saito

Hayashi

Dong

et al. 2020

Sci Rep

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“…EDS analyses show a relatively homogenous composition on the entire surface of deposited thin films. 20 The metastable phases have already been reported in Mg-Sn thin films, 16 or as a result of mechanical alloying via high-energy ballmilling in the Mg-Sn bulk material. 39 Assuming a composition close to Mg 62 Sn 38 , the proportion of the orthorhombic phase determined from the chemical content of the film is lower than 5% in the undoped samples of group I.…”

Section: Resultsmentioning

confidence: 89%

“…Sputtering parameters of the closed symbols are used in this study to investigate the effect of Cu doping. 20 All the samples perfectly cover the surface of the substrate and no cracks or delamination were detected on the top surface of the films. A good adhesion between the films and the substrates is also observed.…”

Section: Resultsmentioning

confidence: 94%

“…Figure 1 presents the evolution of the Sn atomic concentration measured by EDS for the coatings deposited on fused quartz as a function of the power ratio applied to each target (P Sn /P Mg ) during the sputtering process. In our previous study, 20 undoped Mg-Sn films were investigated. The highest ZT value was obtained for the film with 36 at.% of Sn.…”

Section: Resultsmentioning

confidence: 99%

“…The thin film analyzer (TFA; Linseis) was employed to measure all the thermoelectric properties on the same sample and with a single run in order to obtain the in-plane ZT value. 20,38 In order to reach a stabilization of the film's properties, all the measurements related to thermoelectric properties were carried out following three cycles, consisting of heating and cooling runs in the temperature range from 30 to 200°C in vacuum at about 10 À4 Pa. For each cycle, the sample was heated with a ramp of 1°C min À1 . Afterward, the temperature was decreased with the same ramp down to 30°C.…”

Section: Characterizationmentioning

confidence: 99%

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Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Safavi

Martin

Aubry

et al. 2021

Journal of Elec Materi

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Two groups of Mg-Sn thin films were deposited by magnetron co-sputtering of Mg, Sn, and Cu targets. Group I was Mg-Sn films with [Mg]/[Sn] = 2 and group II with [Mg]/[Sn] = 1.75. The effect of Mg-deficiency and Cu-doping on the structure and thermoelectric properties was investigated. Both groups were doped by different Cu concentrations (0 at.%, 0.5 at.%, and 1.5 at.%). The structure and morphology of the thin films were investigated. The stable face-centered cubic structure was only observed for undoped film of group I, while a mixture of facecentered cubic and metastable orthorhombic structures coexisted for other samples whatever the Cu content. Carrier concentration and mobility were measured to explain the electronic transport behaviors of the films. The bandgap energy for both groups was estimated by the Kubelka-Munk's method. The influence of the Mg deficiency and Cu doping on the thermoelectric properties was discussed for a range of temperatures: 30-200°C. For both groups, the best figure-of-merit, ZT, was obtained at 200°C for samples doped with 0.5 at.% Cu with ZT = 0.07 for group I and ZT = 0.27 for group II.

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Fabrication of Mg3Sb2 thin films via radio-frequency magnetron sputtering and analysis of the corresponding electrical properties

Tani

Ishikawa

2021

J Mater Sci: Mater Electron

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Thermoelectric properties improvement in Mg2Sn thin films by structural modification

Cited by 12 publications

References 30 publications

Control of the Thermoelectric Properties of Mg2Sn Single Crystals via Point-Defect Engineering

Control of the Thermoelectric Properties of Mg2Sn Single Crystals via Point-Defect Engineering

Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Fabrication of Mg3Sb2 thin films via radio-frequency magnetron sputtering and analysis of the corresponding electrical properties

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