Thermoelectric properties and Kondo transition in the pseudo‐gap metals TiNiSi and TiNiGe

Abstract

Materials with the TiNiSi structure have recently been highlighted as potential thermoelectric materials. Here we report the thermoelectric properties of TiNiX (X=Si and Ge). Both materials behave as defective metals or heavily doped degenerate semiconductors. Room temperature Seebeck coefficients are −45 μV K−1 (Si) and −20 μV K−1 (Ge) with electrical resistivities of 0.5–1 mΩ cm. The lattice thermal conductivities are 8 W m−1 K−1 (Si) and 6 W m−1 K−1 (Ge) at 360 K, which is promising in the absence of alloying. The calculated power factors and figures of merit remain small, with the largest S2/ρ=0.17 mW m−1 K−2 and peak zT=5×10−3 seen in TiNiSi near 300 K. Both compositions show Kondo behaviour at low‐temperatures, linked to the emergence of local moment magnetism, and have substantial magnetoresistance effects at 2 K. This work provides property characterisation for two members of this large class of intermetallic materials.