2021
DOI: 10.1016/j.jallcom.2021.159630
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Thermoelectric power properties of Ge doped PbTe alloys

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Cited by 29 publications
(8 citation statements)
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“…Crystalline asymmetric band structure with rhombohedral unit cell has been observed for these compounds [1]. Narrow band gap chalcogenide semiconductors of layer structure show interest and high potential for thermoelectric and Hall-effect applications in addition to interesting electrophysical and galvanomagnetic features [2].…”
Section: Introductionmentioning
confidence: 94%
“…Crystalline asymmetric band structure with rhombohedral unit cell has been observed for these compounds [1]. Narrow band gap chalcogenide semiconductors of layer structure show interest and high potential for thermoelectric and Hall-effect applications in addition to interesting electrophysical and galvanomagnetic features [2].…”
Section: Introductionmentioning
confidence: 94%
“…Also, stoichiometrically weighed Bi and Te elements for the composition (Bi 2 ) m (Bi 2 Te 3 ) m vacuum sealed in a silica tube was treated at 1173 K and quenched after 6 h [471], whereas Zhu et al have synthesized Bi 0.5 Sb 1.5 Te 3 samples, which were sealed under vacuum in a quartz tube after it was melted at 1073 K for 6 h [472]. In addition to that, many PbTe based alloys such as PbTe-x% ZnTe [473], Pb 1−x Gd x Te [19], (PbTe) n -Sb 2 Te 3 [252], Pb 1−x Ge x Te [474], have been synthesized by vacuum sealing and melting method.…”
Section: Vacuum Sealing-melting Reactionmentioning
confidence: 99%
“…The most important aspect determining this technology's ability to convert energy efficiently is its dimensionless figure of merit ZT for thermoelectric materials. ZT is commonly expressed using the following relation: (1) Where the parameters of this equation were defined in [2]. Over the past few decades, numerous efforts have been undertaken to improve the thermoelectric capability of different materials using several techniques, such as doping engineering [3].…”
Section: Introductionmentioning
confidence: 99%