Thermoelectric power of thin polycrystalline metal films in an effective mean free path model

Pichard, C. R.; Tellier, C. R.; Tosser, A. J.

doi:10.1088/0305-4608/10/9/016

Cited by 73 publications

(22 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although the Seebeck coefficient is predicated to increase with reduced dimensions of the material due to a higher density of states near the Fermi level3853. However, the higher surface defects and trap charge states in NWs may lead to lower Seebeck coefficient because of the reduced electronic mean free path l o by the increased scattering54. Further analysis of the dominant cause of the Seebeck coefficient reduction will be quite useful.…”

Section: Resultsmentioning

confidence: 99%

Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles

Shellaiah

Sun

2016

Sci Rep

View full text Add to dashboard Cite

In this study, we measured the thermal conductivity and Seebeck coefficient of single Sb2Se3 nanowires and nanowire bundles with a high resistivity (σ ~ 4.37 × 10−4 S/m). Microdevices consisting of two adjacent suspended silicon nitride membranes were fabricated to measure the thermal transport properties of the nanowires in vacuum. Single Sb2Se3 nanowires with different diameters and nanowire bundles were carefully placed on the device to bridge the two membranes. The relationship of temperature difference on each heating/sensing suspension membranes with joule heating was accurately determined. A single Sb2Se3 nanowire with a diameter of ~ 680 nm was found to have a thermal conductivity (kNW) of 0.037 ± 0.002 W/m·K. The thermal conductivity of the nanowires is more than an order of magnitude lower than that of bulk materials (k ~ 0.36–1.9 W/m·K) and highly conductive (σ ~ 3 × 104 S/m) Sb2Se3 single nanowires (k ~ 1 W/m·K). The measured Seebeck coefficient with a positive value of ~ 661 μV/K is comparable to that of highly conductive Sb2Se3 single nanowires (~ 750 μV/K). The thermal transport between wires with different diameters and nanowire bundles was compared and discussed.

show abstract

Section: Resultsmentioning

confidence: 99%

Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles

Shellaiah

Sun

2016

Sci Rep

View full text Add to dashboard Cite

show abstract

“…The Seebeck coefficient is strongly correlated to the band structure around the Fermi level, and under simple approximation in metals, the coefficient is proportional to the energy derivative of the logarithmic density of state (DOS) at the Fermi level. [16][17][18] In a ferromagnetic material, because the DOS has different features for up and down spins, one must separately consider the movement directions of the up-spin electrons and the down-spin electrons.…”

Section: Introductionmentioning

confidence: 99%

Efficient thermal spin injection using CoFeAl nanowire

Itoh

Kimura

2014

NPG Asia Mater

View full text Add to dashboard Cite

Nanoelectronic devices based on electron spin can overcome the physical limitations of the present semiconductor technology because of their low power consumption while exploiting the spin degree of freedom of electrons. Although enhancing the efficiency of generation of the spin current is imperative and a primary issue for the practical application of spin-based electronics, seamless device integration with the conventional complementary metal-oxide semiconductor technology is another important milestone for developing spin-based nanoelectronics. In particular, the preparation of nanosized, magnetic, multilayered structures with electrical connections to individual complementary metal-oxide semiconductor circuits significantly complicates the fabrication procedure of nanoelectronic devices. Thermal spin injection, which is a recently discovered unique characteristic of spin current, may be an innovative method for simplifying device integration without the need for electricity, namely wireless spintronics. However, the feasibility of using the thermal spin injection method is poor because of its extremely low-generation efficiency. Here, we demonstrate that a highly spin-polarized, ferromagnetic CoFeAl electrode with a favorable band structure has excellent properties for thermal spin injection. The spin-dependent Seebeck coefficient is approximately 70 lV K À1 , which facilitates highly efficient generation of the spin current from heat. The heat generates approximately 100 times more spin voltage than a conventional ferromagnetic injector at room temperature. This innovative demonstration may open a new route for spin-device integration and its applications.

show abstract

“…[24] S is reduced dramatically for the smaller NWs. Both theory [41] and experiment [40] have concluded that surface and grain-boundary scattering will reduce S in polycrystalline thin films. This may also apply to the width of NWs.…”

mentioning

confidence: 99%

Size‐Dependent Transport and Thermoelectric Properties of Individual Polycrystalline Bismuth Nanowires

2006

View full text Add to dashboard Cite

Nanofabrication methods and a device architecture are combined to allow for four‐point electric, thermoelectric, and electric field‐effect measurements on individual Bi nanowires. The figure shows a false‐color SEM image of a typical device used in this study, with the 11 Bi nanowires shown as a red → white gradient. The temperature dependence of the various transport properties as a function of nanowire width is investigated and discussed.

show abstract

Thermoelectric power of thin polycrystalline metal films in an effective mean free path model

Cited by 73 publications

References 21 publications

Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles

Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles

Efficient thermal spin injection using CoFeAl nanowire

Size‐Dependent Transport and Thermoelectric Properties of Individual Polycrystalline Bismuth Nanowires

Contact Info

Product

Resources

About