Thermoelectric Power of Single-Crystalline Ce₂RhSi₃

Abstract

High-quality single crystal of Ce 2 RhSi 3 was studied by means of thermoelectric power measurements carried out down to 2 K in external magnetic fields up to 13 T. The results obtained above 50 K were interpreted in terms of a modified two-band model that takes into account temperature variation of the width of 4f -derived narrow band located near the Fermi level. At lower temperatures the thermopower exhibits more complex temperature dependences that likely involve interplays of magnetic exchange, Kondo and crystal-field interactions.